TC4S66F ,BILATERAL SWITCHTC4S66F/FUT(‘ASEEF T(‘ASEEFIII -W0ti9le9le
vTC4S66F/FU contains one circuit of bidirectional swi ..
TC4S66FU ,BILATERAL SWITCHFEATURES
TC4566FU
o ON-resistance (RON)o OFF-resistance (ROFF)ROFF (Typ.) > 109 QWeightSSOPS-P- ..
TC4S66FU ,BILATERAL SWITCHTC4S66F/FUT(‘ASEEF T(‘ASEEFIII -W0ti9le9le
vTC4S66F/FU contains one circuit of bidirectional swi ..
TC4S69F ,INVERTER GATETC4569FT(‘AQEQFThe TC4569F is three stage inverter.
The output is provided with the buffer, the in ..
TC4S71F ,2 INPUT OR GATETC4S71 FThe TC4S71F is 2-input positive logic OR gates.
Gate output with inverter buffer improve t ..
TC4S81F ,2 INPUT AND GATETC4581 FT(‘AQR1 FThe TC4581F is 2-input positive logic AND gates.
Gate output with inverter buffer ..
TC7SU04F ,INVERTERTC7SUO4F/FUI‘l vvv II, I“. vvvThe TC7SUO4 is a high speed CZMOS INVERTER fabricated |TC7SU04F Iuuit ..
TC7SU04FU ,INVERTERTC7SUO4F/FUI‘l vvv II, I“. vvvThe TC7SUO4 is a high speed CZMOS INVERTER fabricated |TC7SU04F Iuuit ..
TC7SZ00AFE ,2 Input NAND GateElectrical Characteristics DC Characteristics Ta 25°C Ta 40~85°CTest Characteristics Symbol T ..
TC7SZ00F ,2 INPUT NAND GATETC7SZOOF/FU_tqF.-9.9.q '
TC7SZ00F ,2 INPUT NAND GATEFEATURES I TC7SZOOF Io Higl@VCC = 3 Va Super High Speed Operation: tPD 2.4 ns (Typ.)@Vcc = 5v, 50 p ..
TC7SZ00FE ,L-MOS SHS series (TC74LCX-equivalent)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage V −0.5 to 6 ..
TC4S66F-TC4S66FU
BILATERAL SWITCH
TOSHIBA TC4S66F/FU
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
TC4566F, TC4S66FU
BILATERAL SWITCH
TC4S66F/FU contains one circuit of bidirectional switches. TC4S66F
When control input, CONT is set to "H" level, the
impedance between input and output of the switch
becomes low and when it is set to "L" level, the switch
becomes high. This can be applied for switching of i ‘
analog signals and digital signals. l (li, k’
FEATURES
. TC4566FU
o ON-resistance (RON)
3000 (Typ.) .... VDD - I/SS = 5V
1100(Typ.) .... VDD-I/SS---'
70 n (Typ.) ..... VDD - I/SS = 15V
0 OFF-resistance (ROFF)
ROFF (Typ.) > 1090
Weight
SSOPS-P-0.95 : 0.016g (Typ.)
SSOPS-P-0.65A : 0.006g (Typ.)
MAXIMUM RATINGS TRUTH TABLE
IMPEDANCE
CHARACTERISTIC SYMBOL RATING UNIT CONTROL BETWEEN
DC Supply Voltage VDD l/ss - 0.r-vss + 20 v lN/OUT-OUTQIN *
Control Input Voltage vc IN I/SS - O.5~VDD + 0.5 v H 0.5--5 le' n
Switch I/O Voltage VI/O l/SS - o.5~vDD + 0.5 v L > 10 fl
Power Dissipation PD 200 mW * : See static electrical
Potential difference across characteristics.
l/O during ON VI vo LFO.5 V
Control Input Current k: IN :10 mA
Operating Temperature Topr -40--85 ''C
Storage Temperature Tstg -65--150 °C
Lead Temperature (10 s) TL 260 ''C
980910EBA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The products described in this document are subject to the foreign exchange and foreign trade laws.
o The information contained herein is presented only as a guide for the ap Iications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
2000-06-21 1/7
TOSHIBA
TC4S66F/FU
CIRCUIT DIAGRAM
PIN ASSIGNMENT (TOP VIEW)
MARKING
VDD T e Name
0 IN/OUT Er-, EVDD wit"'""-"'"'
OUT/IN ' Fl / f
C O 1 _|_ C9
IN/OUT OUT/IN vss ECONT t1 1:1 b1
CONTROLI:
RECOMMENDED OPERATING CONDITIONS Nss = 0V)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
DC Supply Voltage VDD - 3 - 18 v
Input/Output Voltage V|N/VOUT - 0 - VDD V
STATIC ELECTRICAL CHARACTERISTICS (In case not specifically appointed, I/SS = 0V)
SYM- - 40°C 25°C 85''C
CHARACTERISTIC TEST CONDITION VDD UNIT
BOL (V) MIN. MAX. MIN. TYP. MAX. MIN. MAX.
C t ll tHi h 5 3.5 - 3.5 2.75 - 3.5 -
C,l, ro npu 19 VIH hd = 10PA 10 7.0 - 7.0 5.50 - 7.0 -
oltage 15 11.0 - 11.0 8.25 - 11.0 - v
Control In ut Low 5 - 1.5 - 2.25 1.5 - 1.5
Volta e p l/IL hd-- 10PA 10 - 3.0 - 4.5 3.0 - 3.0
g 15 - 4.0 - 6.75 4.0 - 4.0
5 - 800 - 290 950 - 1200
On-State Resistance RON 1s=hlrf//DD IO - 210 - 120 250 - 300 n
L - 15 - 140 - 85 160 - 200
VIN =18V 18 - 1100 - 10.14c100 - 11000
Input/Output VOUT = 0V
Leakage Current IOFF VIN = 0V nA
18 - 1100 - -+0.14c100 - 11000
VOUT = 18V
Quiescent Device 5 - 0.25 - 0.001 0.25 - 7.5
Current IDD VIN =VDD, I/SS 10 - 0.5 - 0.001 0.5 - 15 pA
15 - 1.0 - 0.002 1.0 - 30
Input HLeveI 'IH 1hH=18V 18 - 0.1 - IO-s 0.1 - 1.0
Current LLeveI IOL lhL=0V 18 - -0.1 - -IO-5 -0.1 - -1.0 pA
2000-06-21 2/7
TOSHIBA TC4S66F/FU
DYNAMIC ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL CONDITION VSS (V) VDD (V) MIN. TYP. MAX. UNIT
Propagation Delay t 0 5 - 15 40
Time ll? CL = 50 pF 0 IO - 8 20
(IN-OUT) pm 0 15 - 5 15
Propagation Delay - 0 5 - 55 120
Time :9“ EL . [ff,) 0 IO - 25 40 ns
(CONTROL-OUT) pZH L - p o 15 - 20 30
Propagation Delay - 0 5 - 45 80
Time 'ttf, 2L . [lf, 0 IO - 30 70
(CONTROL-OUT) pHZ L - p o 15 - 25 60
Max. Control Input fMAX RL = 1 k0 g 1: - 1(2) -
Repetition Rate (C) CL = 50 pF 0 15 - 12 - MHz
-3dB Cut Off fMAx RL = 1 k0
- 5 5 - 30 -
Frequency (I-O) CL = 50 pF (*1)
Total Harmonic RL = 10 k0
- - 5 5 - 0.03 - "
Distortion f = 1 kHz (*2) hl
_50dB Feedthrough - RL = 1 k0 (*3) -5 5 - 600 - kHz
Frequency
Crosstalk RIN = 1 kn 0 5 - 200 -
- ROUT = 10 k0 0 1O - 400 - mV
(CONTROL-OUT) CL = 15 pF 0 15 - 600 -
I t C it C Control Input - 5 7.5
npu apac' ance IN Switch I/O - 10 - pF
Feedthrough
Capacitance CIN-OUT - - 0.5 -
*1 : The frequency at 2060910 1-(e-; = -3dB shall be fMAX(I/O) using sine wave of $2.5 Vp-p
for VIS.
*2 .' V's shall be sine wave of 12.5V.
*3 : The frequency at 2060910 I(fiss = 50dB shall be the feed through using of -+2.5 Vp-p.
TOSHIBA TC4S66F/FU
l. tpLHr tpHL 2. thL. thH. tpLz. tsz
I/O-O /l CONTROL-O /l
P.G. 1")iei":Frr; SW2
R = 1 k
CL = 50 pF C T l L Q
L___?___J TCL=50PF
tr=20ns tf=20ns
tr=20ns tf=20ns
90% DD
CONTROL INPUT 50%
IIO INPUT 10%
SS - v
O/I SW1 = VDD 90% OH
OUT. SW2 = vss 50%
O/I OUTPUT 50% - thH tsz VOL
VOL VOH
O/I SW1 = vss 50%
OUT. SW2 = VDD 10%
3. RON v tpin, tpLz
(l DD I I
(VIN -VOUT)
R = 10 x ""l.-"""'(kQ)
ON VOUT
tr=20ns tf=20ns
4. fMAx (C)
VDD DD
CONTROL
2000-06-21 4/7
TOSHIBA
TC4S66F/FU
5. CROSSTALK (CONTROL INPUT)
tr = 20 nz
CONTROL IN.
RL=10kQ
CL=15pF
I/O IN.
}SEE TEST CONDITIONS
2000-06-21 5/7
TOSHIBA TC4S66F/FU
PACKAGE DIMENSIONS
SSOPS-P-0.95 Unit 2 mm
q----------'-"-----'
1.trlti?
A----)
10 4 - 5 1'2
0.1 CD cr
o . -Fl
-1-l f,", . - "t
a? tn CD
N ci ,
.“.‘ (o
R'? T'"'"
T""" It FJ v Lli'.
1.. - A A
Weight : 0.016g (Typ.)
2000-06-21 6/7
TOSHIBA TC4S66F/FU
PACKAGE DIMENSIONS
SSOPS-P-0.65A Unit : mm
2.1k0.1
1.25i0.1
CNI 1-; 1--e CIC]
ig tl. 2-EE
N N" '-3-EE II
Weight : 0.006g (Typ.)
2000-06-21 7/7
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