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TC4011BFN ,QUAD 2 INPUT NAND GATETC4011BP/BF/BFN/BFTTC4011BP, TC4011BF, TC4011BFN, TC4011BFT(Note) The JEDEC SOP (FN) is not availab ..
TC4011BFT ,QUAD 2 INPUT NAND GATETC4011BP/BF/BFN/BFTTC4011BP, TC4011BF, TC4011BFN, TC4011BFT(Note) The JEDEC SOP (FN) is not availab ..
TC4011BP ,QUAD 2 INPUT NAND GATETC4011BP/BF/BFN/BFTTC4011BP, TC4011BF, TC4011BFN, TC4011BFT(Note) The JEDEC SOP (FN) is not availab ..
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TC40107BP
CMOS Digital Integrated Circuit Silicon Monolithic
CZMOS DIGITAL INTEGRATED CIRCUIT
SILICON MONOLITHIC
TG4®W7BP
TC40107BP DUAL Z-INPUT NAND BUFFER/DRIVER
TC40107BP is a dual 2-input NAND gate, of which
output is of open-drain structure by use of N-channel
MOS FET. Being capable of driving a large current,
it can be directly connected to a relay, a lamp, a
light-emitting diode (LED), etc. Wired OR can be
also made.
(IOL=74mA(Typ.) at VDD=10V and VOL=0.5V)
The package is a compact DIP 8-pin unit, which is
easily mounted. 1
Since its output current is large, if the capacitor
of an output line exceeds 500PF, a resistor of 25n
or more should be used in series with the capacitor.
DIP 8 (3DSA-P)
MAXIMUM RATINGS PIN ASSIGNMENT
CHARACTERISTIC SYMBOL RATING UNIT
DC Supply Voltage VDD VSS-0.5-vss+20 V
Input Voltage VIN VSS-0.rsilDD+0.5 V E -u.,A
Al 1 8 VDD
Output Voltage VOUT VSS-0i-VDD+0.5 ll
+ _ 131E 7 A2
DC Input Current IIN T10 mA
Max. GND Current ISS 125 mA X1 IE 6 B2
Power Dissipation PD 300 mH vssE 5 X2
0 eratin Tem erature ' o
Range g p TA -ll0 85 C
Stora e Tem rat r o (TOP VIEW)
Rangeg pe u e Tstg -65-150 C
Lead Temp./Time Tsol 260°C . 10 sec
CIRCUIT DIAGRAM
TRUTH TABLE
INPUT OUTPUT
%-TC40107BP
L L HZ
Bo-, L H HZ
H L HZ
Ao------ H H L
HZ ' High impedance
RECOMMENDED OPERATING CONDITIONS (Vss=OV)
CHARACTERISTIC SYMBOL MIN. TYP. MAX UNIT
DC Supply Voltage VDD - 18 V
Input Voltage VIN O - VDD V
Load Capacitance. CL - - 500 pF
TC40107BP
STATIC ELECTRICAL CHARACTERISTICS (VSS=0V)
CHARACTERISTIC Ir TEST CONDITION VDD --40 C 25 C 85 C UNIT
(V) MIN. MAX MIN. TYP. MAX. MIN. MAX.
II I l A 5 - 0.05 - 0.00 0.05 - 0.05
- OUT
Low Level VOL 10 - 0.05 - 0.00 0.05 - 0.05 il
Output Voltage VIH=VDD
15 - 0.05 - 0.00 0.05 - 0.05
VOL=0.4V 5 20 - 16 32 - 14 -
v0L=1.0v 5 42 - 34 68 - 30 -
VOL=0.5V 10 46 - 37 74 - 32 -
Output Low' - - - -
Current 10L 1lOL--l.0V 10 85 68 136 60 mA
VOL=0.5V 15 63 - 50 100 - 44 -
V1H=VDD
vouT=0.5v, 4.5V 5 3.5 - 3.5 2.75 - 3.5 -
Input High VIH VOUT=1.OV, 9.0V 10 7.0 - 7.0 5.5 - 7.0 -
Voltage ' VouT=l.5V,l3.5V 15 11.0 - 11.0 8.25 - 11.0 -
l IOUT I VouT=4.5V 5 - 1. - 2.25 1.5 - 1.
Input Low VOUT=9.0V 10 - - 4.5 3.0 - 3.0
Voltage VIL
' VOUT=13.5V 15 - 4. - 6.75 4.0 - 4.0
(1otnlcrlsiA
Input Level 11H VIH=18V 18 - 0.1 - 10-5 0.1 - 1.0
Current "L" 5
Level 11L V1L=OV 18 - -0.1 - -10 -0.1 - -1.0
3-State Output = - - -4 - PA
Leakage Current IDH VOH 18V 18 2 10 2 20
5 - 1 - 0.001 1 - 7.5
Quiescent Device IDD VIN=VDD9VSS 10 _ 2 - 0 001 2 - 15
Current _ Outputs Open .
** 15 - 4 - 0.002 4 - 30
0 Required external pull-up register R (=20kn)
ikig. A11 valid input combinations.
TC40107BP
DYNAMIC ELECTRICAL CHARACTERISTICS (Ta=25°C, Vss=0V, CL=50pF)
CHARACTERISTIC SYMBOL TEST CONDITION VDD(V) MIN. TYP. MAX. UNIT
5 - 35 100
Output Transition Time
(Low to High) tTLH RL=1200 10 - 25 70 ns
15 - 20 50
5 - 35 100
outdCt,h"tyie,,t,)ion Time tTHL RL--120n 10 - 10 40 ns
15 - 7 20
5 - 60 200
Pro a ation Dela Time
(:05 to High) y :an RL=1200 10 - 35 120 ns
15 - 30 100
. 5 - 70 200
Pro a ation Dela Time
(Sigh to Lov) y tpHL RL=1200 10 - 30 90 ns
15 - 20 60
Input Capacitance CIN - 5 7.5 pF
Output Capacitance COUT - . 30 - pF
CIRCUIT AND NAVEFORM FOR MEASUREMENT OF DYNAMIC CHARACTERISTICS
CIRCUIT WAVEFORM
20ns ZOns
g INPUT
t' r-4
:24 “”111. tTLts
PULSE :1. --- 90% o
GENERATOR g OUTPUT 50% 50%
“ll? r10% 10%
tpHL tpua
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