TC0205AD ,N/P-Channel 20-V MOSFETS-04279—Rev. B, 16-Jul-0111-1TC0205ADNew ProductVishay Siliconix ..
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TC0205AD
N/P-Channel 20-V MOSFET
VISHAY
TC0205AD
New Product
Vishay Siliconix
Dual N- and P-Channel 120-V Low-Threshold MOSFET
PRODUCT SUMMARY
Channel VDS (V) rDS(on) (C2) ID (mA)
2.0 @ VGS = 4.5 V 250
N-Channel 20
2.5@VGs=2.5V 150
3.8@VGs=-45V -180
P-Channel -20
5.0 @Vss=-2.5V -100
FEATURES BENEFITS
. Very Small Outline (SC-70, 6-Leads)
Low On-Resistance: 2.0 Q (N-Ch)
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 35 ns
2.5-V or Lower Operation
q Ease in Driving Switches
SOT-363
SC-70 (6-Leads)
Order Number:
TC0205AD
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
. Replace Digital Transistors,
Level-Shifter
q Battery Operated Systems
Power Supply Converter Circuits
o Load/Power Switching-Cell Phones,
Marking Code: Ewl
E = Part Number Code for TC0205AD
w = Week Code
I = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS i 8 i8
TA = 25°C 250 -180
Continuous Drain Current (To = 150°C)a ID
TA = 70°C 200 -140 mA
Pulsed Drain Current IDM 500 -500
TA = 25°C 0.20 (Total)
Maximum Power Dissipation" PD W
TA = 70°C 0.13 (Total)
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RthJA 625 (Total) °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70882 www.vishaycom
S-04279-Rev. B, 16-Jul-01
TC0205AD
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
D S B d V I V Vss=0V,lro=10wA N-Ch 20 24
rain- ource reak own 0 tage (BR)DSS
VGS = 0 V, ID = -10 WA P-Ch -20 -24
Vos = VGS, ID = 50 IIA N-Ch 0.4 0.9 1.5
Gate Threshold Voltage VGS(th) VDS = VGS ID = -50 “A P-Ch -0 4 -0 9 -1 5
N-Ch cl: 2 i 100
Gate-Body Leakage Isss Vos = 0 V, VGS = i 8 V P Ch i2 i100
Vos = 20 V, VGS = 0 V N-Ch 0.001 100
Vos = -20 V, VGS = 0 V P-Ch -0.001 -100
Zero Gate Voltage Drain Current loss 0
VDS = 20 V, VGS = 0 V, TJ = 55 C N-Ch 1 A
VDS = -20 V, Vss = O V, T: = 55''C P-Ch -1 11
Vros 2 2.5 V, VGS = 5.0 V N-Ch 120
V03 2 Al.5 V, VGS = -5.0 V P-Ch -120
On-State Drain Currentb 'D(on) V > 4 5 V V 8 0 V N Ch 400 mA
DS - A , GS = . -
V05 2 -4.5 V, VGS = -8.0 V P-Ch -400
VGS = 2.5 V, ID = 150 mA N-Ch 1.6 2.5
VGS = -2.5 V, ID = -75 mA P-Ch 4 5
Drain-Source On-State Resistanceb rosmn) V 4 5 V I 250 mA N Ch 1 2 2 O Q
GS = ' , D = - . .
VGS = -4.5 V, ID = -180 mA P-Ch 2.6 3.8
Vos = 215 V, ID = 50 mA N-Ch 150
Forward Transconductanctp gfs V 2 5 V I 50 mA P Ch 200 ms
DS = - . , D = - -
Is = 50 mA, VGS = 0 V N-Ch 0.7 1.2
Diode Forward Voltageb Vso ls = -50 mA VGS = 0 V P-Ch -0 7 -1 2 V
Dynamica
G C Q N-Ch 300 450
Total ate harge g
N-Channel P-Ch 300 450
Yas-- 5V, VGS=4-5 V, ko-- 100 mA N-Ch 25
Gate-Source Charge Qgs pC
P-Channel P-Ch 25
VDS---5 V, VGS = -A.5 V, ID=-100 mA N-Ch 100
Gate-Drain Charge di P Ch 100
N-Ch 15
Input Capacitance Ciss
N-Channel P-Ch 15
V08: 5V, VGs=0V N-Ch 11
Output Capacitance CUSS P Ch I P Ch 11 pF
- anne -
Vos = -5 V, VGS = 0 V N-Ch 5
Reverse Transfer Capacitance Crss P Ch 5
Switching
N-Ch 7 12
Turn-On Time td(on) P Ch 7 12
N-Channel
Rise Tune t VDD = 3 v, RL = 100 Q N-Ch 25 35
r ID = 0.25 A, VGEN = 4.5 V, Re = 10 Q P-Ch 25 35
P-Channel N-Ch 19 30
Turn-Off Delay Time td(ofr) VDD = -3 V, RL = 100 S2 P-Ch 19 30
ID = -0.25 A, VGEN = -4.5 V, Rs = 10 Q
N-Ch 9 15
Fall Time tf P Ch 9 15
a. Guaranteed by design, not subject to production testing. VNOJ
b. Pulse test; pulse width 5 300 MS, duty cycle 5 2%. VPOJ
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DocumentNumber: 70882
S-04279-Rev. B, 16-Jul-01
"Gai; TC0205AD
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
1.25 0.8 l
Vss = 3.5 thru 5 v Tc = -55''C
1.00 I I
Ci.:] 3 V Ci] 0.6 25 C V
E -''" E /
'r, 0.75 's
o 2 5 V o
(i . (i 0.4 125 C
o D Cl
I 0.50 ,/, I
2 V 0.2
0.00 0.0
0 1 2 3 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Vros - Drain-to-Source Voltage (V) I/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
A Vss = 0 v
3 If = 1 MHz
8 ,i=i,
it rtcis' c
, I 20 's. ISS
CI ( Coss
L 10 '
g "''"-o-......_,
EDIT Iss,,..,,,. Crss
'- "--,
0 1 2 3 4 0 4 a 12 16 20
b - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
IO l l 1.6
VDS=6V /
8 - ko=100 mA
6 ww'"
VGS=4-5V /
|D=100 mA
1.4 - /"
VGs — Gate-to-Source Voltage (V)
ww'" 6 E /''"
4 / g g 1.0
/''" i: V
2 CI 0.8
5 ',we''''"
0 100 200 300 400 500 600 -50 -25 O 25 50 75 100 125 150
Qg - Total Gate Charge (pC) To-Junction Temperature CC)
DocumentNumber: 70882 www.vishaycom
S-04279-Rev. B, 16-Jul-01 11 -3
TC0205AD E
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
1 T J = 125°C 5
E" 0.1 .:
b' k',! ID = 250 mA
, 0.01 J)
f? (f, 2
0.001 0
0.00 0.3 0.6 0.9 1.2 0 2 4 6 8 10
V50 - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage
0.2 l l
0.1 'sc,,,,, k, = 50 “A
fi?.. -01)
E -0.1 'N.
i' 's,
iii" -0.2
-0.3 Ns,
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature (°C)
www.vishay.com DocumentNumber: 70882
11 -4 S-04279-Rev. B, 16-Jul-01
VISHAY
TC0205AD
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
P-CHANNEL
For the following graphics p-channel negative polarities for all voltage and current values are represented as positive values.
rgsmn) — Drain-Source On-Resistance ( (2) ID — Drain Current (A)
VGS — Gate—to-Source Voltage (V)
Output Characteristics
0 1 2 3 4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.0 0.5 1.0 1.5 2.0 2.5 3.0
ID - Drain Current (A)
Gate Charge
VDS=6V
8 - lro=80mA
6 ww'"
o 100 200 300 400 500 600
Qg - Total Gate Charge (pC)
rDS(on) — Drain»Source On»Resistanoe ( Q
C — Capacitance (pF) ID — Drain Current (A)
(Normalized)
Transfer Characteristics
Tc = -55'C
25°C /
0.3 'sry
(ty 125°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
Ns,.. Ciss
18 ---a
Ns, Coss
0 3 6 9 12
Vros - Drain-to-Source Voltage (V)
1 6 On-Resistance vs. Junction Temperature
Vss = 4.5 v s,,,,,,,,,''''''''
1.4 - ko=180 mA //
0.8 w,,,.'''''
-50 -25 0 25 50 75 100 125 150
T: - Junction Temperature ("C)
DocumentNumber: 70882
S-04279-Rev. B, 16-Jul-01
www.vishay.com
TC0205AD
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (TA = 25°C UNLESS OTHERWISE NOTED)
P-CHANNEL
For the following graphics p-channel negative polarities for all voltage and current values are represented as positive values.
Source-Drain Diode Forward Voltage
T J = 150°C A
G.. 0.1 g
m 0.01 5
0.001 jlif
0.00 0.5 1.0 1.5
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
ID = 180 mA
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
02 l l
ID=50uA ,,,,,w''
(h2 //
'h' 0.1
> s,,,,,,,-''''''
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature (°C)
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DocumentNumber: 70882
S-04279-Rev. B, 16-Jul-01
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