TB31262F ,TOSHIBA Bi- CMOS Integrated Circuit Silicon MonolithicFeatures • Same system & software almost compatible as TB31261AF (Single Conversion, IF Frequency: ..
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TB31262F
TOSHIBA Bi- CMOS Integrated Circuit Silicon Monolithic
TB31262F TOSHIBA Bi� CMOS Integrated Circuit Silicon Monolithic
T B 3 1 2 6 2 F RF 1chip IC for 900 MHz Cordless T elephone
One package involve three systems about RF, IF, and AF.
Involving LNA, MIX, PA, VCO (TX,RX), PLL, IF-AMP, Detecter,
Compander,and 4 useful audio amplifiers. It is possible to reduce
many external parts. This IC is suitable for ISM 900 MHz
cordless telephone.
Features Same system & software almost compatible as TB31261AF (Single Conversion, IF Frequency: 10.7 MHz,) Built-in LNA Built-in 1’st MIX
® Double Balanced MIX (DBM) Type. Built-in Differential VCO, Variable capacitor (TX, RX) and Doubler (450 MHz ´ 2) Built-in PA A substitution from TB31261AF is easy
(Same package, Software almost compatible) Low operating voltage: VCC = 2.0~5.0 V Current operating current: ICC = 70 mA (All On) PLL operating frequency :around 450 MHz Serial control for all status Built in pre-amp, receiver-amp, mic-amp, and spl-amp Receiver output Level adjustment. Variable battery alarm setting. (7 thresholds) Built in battery saving function for Intermittent receiving. Small package: QFP52pin (0.65 mm pitch)
＊Handle with care to prevent devices from deterioration by static electricity. ����� ������� �����
