TA8221AL ,30W BTLX2CH AUDIO POWER AMPLIFIERTA8221AH/ALTAR771 AH TAR771 N"""9rr"-"-""""' M..-.-.-....-The thermal resistance f?j-T of TA8221AH, ..
TA8221AL ,30W BTLX2CH AUDIO POWER AMPLIFIERTA8221AH/ALTAR771 AH TAR771 N"""9rr"-"-""""' M..-.-.-....-The thermal resistance f?j-T of TA8221AH, ..
TA8221AL ,30W BTLX2CH AUDIO POWER AMPLIFIERTA8221AH/ALTAR771 AH TAR771 N"""9rr"-"-""""' M..-.-.-....-The thermal resistance f?j-T of TA8221AH, ..
TA8223K ,Low Frequency Power AmplifierTA8223K TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8223K Low Frequency Power ..
TA8225H ,45W BTL Audio AmplifierFeatures High power : P = 45W (typ.) OUT (1)(V = 14.4V, f = 1kHz, THD = 10%, R = 2Ω) CC L: P = 4 ..
TA8225HQ , 45W BTL Audio Amplifier
TC55VEM416BXGN55 , 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TC55VL818FF-83 ,524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAMFEATURES • Organized as 524,288 words by 18 bits • Fast cycle time of 12 ns minimum (83 MHz maximum ..
TC55VL836FF-83 ,262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAMFEATURES • Organized as 262,144 words by 36 bits • Fast cycle time of 12 ns minimum (83 MHz maximum ..
TC55VZM208AFTN12 ,524,288-WORD BY 8-BIT CMOS STATIC RAM
TC55VZM216AJJN12 ,262,144-WORD BY 16-BIT CMOS STATIC RAM
TC55W1600FT55 ,1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
TA8221AH-TA8221AL
30W BTLX2CH AUDIO POWER AMPLIFIER
TOSHIBA TA8221AH/AL
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
TA8221IAH, TA8221IAL
30W BTLX2CH AUDIO POWER AMPLIFIER
The thermal resistance 6j-T of TA8221AH, TA8221AL TA8221AH
package designed for low thermal resistance, has a high .
efficiency of heat radiation. . y C-rr''--"-,----:-:-?-'-"---'-"-] _.---"
The temperature rise of chip can be reduced and the V _ 7
influence from the degradation of the features due to
the temperature rise at the high output can also be
reduced.
This stereo audio power IC, designed for car audio use,
has two built-in channels to reduce the characteristic
difference between L and R channels.
It also contains various kind of protection.
FEATURES
lt Low Thermal Resistance
: (9j-T=1.5°C/W (Infinite Heat Sink)
0 High Power .
: POUT(1)=30W (Typ.)/Channel 1fzelgl)%.a,
(Vcc=14.4v, f=1kHz, THD=10%, RL=ZQ) HSlP17-P-2.00 :
POUT (2) = 26W (Typ.)lChannel
(Vcc=13.2v, f=1kHz, THD=10%, RL=2fl)
POUT (3) = 19W (Typ.)lChannel
(Vcc=13.2V, f=1kHz, THD= 10%, RL=4Q)
.8g (Typ.)
8g (Typ.)
o Low Distortion Ratio : THD=0.04% (Typ.) (vcc=13.2v, f=1kHz, POUT=1W, RL=4Q, GV=50dB)
o Low Noise , vNo=o.30mvrms (Typ.) (vcc=13.2v, RL=4Q, GV=50dB, Rg=00, BW=20Hz--20KHz)
o Built-in Stand-by Function (With pin@ set at LOW, power is turned OFF.) : ISB= 100PA (Typ.)
o Built-in Mutiny Function (With pin0) set at LOW, power is turned OFF.)
It Built-in Various Protection Circuits
Protection Circuits : Thermal Shut Down, Over Voltage, Out-ol/cc Short, Out-aGND Short and OUT-
OUT Short.
0 Operating Supply Voltage : Vcc(opr)=9~18v
1 2001-06-25
TOSHIBA
BLOCK DIAGRAM
TA8221AH, TA8221AL (Gv=50dB)
TA8221AH/AL
49 Il..?) 3.
NC Power VCC1 Power VCC2
OUTZ 16 T -
b GNDI ®
Acti Hi h 1 Mute SW - PROTECTOR - _'',",,
Ive- lg
Power- ON) LOAD DUMP TAB
THERMAL SHUT DOWN
J" IV ii) Ripple SHORT CIRCUIT
GND2 ®
0 " + fi? mlit
FIat-Am p
Pre-GND Stand-By SW
f?, Gh,
Active-High 3V
(Power-ON) f
CAUTION AND APPLICATION METHOD
(Description is made only on the single channel.)
1. Voltage gain adjustment
Amp 3, Amp 4=20dB
: Pre-Amp
Amp 2 :
Phase Amp
POWER Amp (Flat-Amp)
POWER Amp (Flat-Amp)
This IC has the amplifier constructions as shown Fig.1. The Pre-Amp (Amp 1) is provided to the
primary stage, and the input voltage is amplified by the Flat Amps, Amp 3 and Amp 4 of each
channel through the phase Amp (Amp 2).
Since the input offset is prevented by Pre-Amp when VCC is set to ON, this circuit can remarkably
reduce the pop noise.
TOSHIBA TA8221AH/AL
The total closed loop gain GV of this IC can be obtained by expression below when the closed loop
voltage gain of Amp 1 is Gv1.
R1+ (Rf+ R2)
GV1 = 208og Rf + R2
(dB) ..... (1)
The closed loop voltage gain of POWER Amp, Amp 3
and Amp 4 is fixed at GV3'=.GV4=20dB.
Therefore, the total closed circuit voltage gain GV is 60
obtained through BTL connection by the expression
below. so
GV=Gv1+GV3+6 (dB) ............... (2) fl
For example, when Rf=OQ, GV is obtained by the o 40 “~- "s
expressions (1) and (2) as shown below. F, ",
Gv=24+20+6--50di? E 30
The voltage gain is reduced when Rf is increased. (Fig.2) 9
With the voltage gain reduced, since (1) the oscillation "s,
stability is reduced, and (2) the pop noise changes when
VCC is set to ON, refer to the items 3 and 4. 00 $3 300 500 1k 3k
FEEDBACK RESISTANCE Rf (0)
2. Stand-by SW function
By means of controlling pin@ (Stand-by terminal) to High
and Low, the power supply can be set to ON and OFF. VCC
The threshold voltage of pin?) is set at 2.1V (3VBE), and
the power supply current is about 100PA (Typ.) at the l ONlPower W
L = BE
stand-by state. OFF /
i To BIAS
Control voltage of ping) : V(SB) CUTTING CIRCUIT
STAND-BY POWER V(SB) (V)
ON OFF 0--il
OFF ON 3~Vcc Fig.3 With pin@ set to High, Power is turned ON.
Adjustage of stand-by SW
(1) Since VCC can directly be controlled to ON/OFF by the microcomputer, the switching relay
can be omitted.
(2) Since the control current is microscopic, the switching relay of small current capacity is
satisfactory for switching.
3 2001-06-25
TOSHIBA TA8221AH/AL
Large current capacity switch
\o—> BATTERY I I BATTERY
b- -- J
VCC VCC
FROM MICROCOMPUTER
(Conventional Method)
Small current capacity switch DIRECTLY FROM MICROCOMPUTER
L, - BATTERY BATTERY
STANDBY Vcc STANDBY VCC
(Stand by Switch Method)
3. Preventive measure against oscillation
For preventing the oscillation, it is advisable to use C4, the condenser of polyester film having small
characteristic fluctuation of the temperature and the frequency.
The condenser (C6) between input and GND is effective for preventing oscillation which is
generated with a feedback signal from an output stage.
The resistance R to be series applied to C4 is effective for phase correction of high frequency, and
improves the oscillation allowance.
(1) Voltage gain to be used (GV Setting)
(2) Capacity value of condenser
(3) Kind of condenser
(4) Layout of printed board
In case of its use with the voltage gain GV reduced or with the feedback amount increased, care
must be taken because the phase-inversion is caused by the high frequency resulting in making the
oscillation liable generated.
4. Adjustment of output offset (When the power supply turn on)
As this IC is contructed with DC circuit on the primary stage, it is necessary to lower a input offset
or output offset by agreement with the each leading edge time constant of the input voltage in
the primary stage and NF terminal voltage.
Concretely, monitor the output DC voltage and vary the capacity value in input condenser and NF
condenser (See Fig.4)
(Reference) In case of setting the condition (GV=40dB) with Rf=4700.
VOUT (DC) VOUT (DC)
OUTPUT OFFSET
POWER ON Cy POWER ON
ADJUSTMENT
C1=4_7/zF,C2=47/1F C1--3BpfC2--33pF
4 2001-06-25
TOSHIBA TA8221AH/AL
5. Mutiny function
Through setting pin® (mute terminal) at about IV or less, muting
becomes possible.
The interval circuit of IC is shown in Fig.5.
When pin® is set to LOW, 01 and Q2 are turned to ON, the charge
of the ripple condenser is discharged and the bias is cut. The mute
amount of 60dB or over can be obtained.
Since this muting function rapidly discharge the charge of the ripple
filter capacitor of pin., the pop noise is generated by the DC
fluctuation of the bias section.
Therefore, this muting function is not appropriate to the audio muting but it is effective in muting
at Vcc-9ON.
Fig.5 Mute circuit
6. Rapid ripple discharging circuit at the time of VCC OFF
This circuit is effective in such a mode where the VCC and the Stand-by terminals become high/low
simultaneously ; for instance, for a pop noise produced when the power is turned ON/OFF
repeatedly by operating the ignition key.
+ ole.
VCC-ANT
Q1 Q3 DETECTION CIRCUIT
MUTE Q2 (N/CCs. 7V)
LPower Stage Bias Cut
If VCC is OFF, vcc'=.7v is detected internally on IC and
(1) The power stage bias circuit is cut, and
(2) Pin. : Ripple Capacitor is rapidly discharged by turning Q3 ON and then Q1 and Q2 ON.
(Precaution 1)
When the stand-by terminal was put to the low level after the ripple rapid VCC
discharging circuit was operated (Vcc'=.7V) at the time when VCC was turned
OFF, a pop noise may be generated. Therefore, VCC which makes the Stand-by STB
terminal low shall be set at 8V or above so that (1) the Stand-by terminal is
put at the low level and (2) the ripple rapid discharging circuit is turned ON
when VCC is turned OFF (in order of (1) and (2)). Fig.7
An example of application is shown in (Fig.7).
5 2001-06-25
TOSHIBA TA8221AH/AL
(Precaution 2)
If the falling time constant of the VCC line is large (the fall is gentle), the pop noise may
become worse.
In this case, it is possible to prevent the pop noise from becoming worse by reducing the
capacity of "Ripple Rapid Discharging Circuit at the time of VCC OFF" according to the following
steps :
(a)Short pinC) (Mute Terminal) and pin. (Ripple Terminal).
(b) Increase the capacity of ripple capacitor of pints).
However, it shall be kept in mind that the time for turning the power ON becomes longer as
the result of step (b).
7. External part list and description
SYM RECOM- INFLUENCE
BOL' MENDED FEATURE SMALLER THAN LARGER THAN REMARKS
VALUE RECOMMENDED VALUE RECOMMENDED VALUE
. . Related to gain.
C1 4.7PF DC blocking Related to pop noise at Vcc-IN. Refer to item 4.
Related to pop noise at I/cc-ANU.
Feedback Determination of low cut-off frequency.
c2 47/1F 1
condenser C2 =.-
27r-fL-Rf
C3 220 F Ripple Time constant is small Time constant is large
” reduction at VCC-SON or OFF. at Vcc-SON or OFF.
C4 0.12/1F oscillatl.on Male liable to Oscillation allowance. Refer to item 3.
prevention oscillate.
For filtering power supply hum and ripple.
C5 1000PF Ripple filter Large at using AC rectified power supply.
Small at using DC power supply.
. . ill . I . . .
C6 1000pF Oscnllatien Oseil ation allowance improved Refer to item 3.
prevention Noise reduction
6 2001-06-25
TOSHIBA TA8221AH/AL
MAXIMUM RATINGS (Ta =25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Peak Supply Voltage (0.25) VCC (surge) 50 V
DC Supply Voltage VCC (DC) 25 V
Operating Supply Voltage Vcc(opr) 18 V
Output Current (Peak) |O(peak) 9 A
Power Dissipation PD 50 W
Operating Temperature Top, -30-85 "C
Storage Temperature Tstg - 55--150 ''C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, VCC=13.2V, RL=4Q, f=1kHz, Ta =25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP. MAX. UNIT
Quiescent Supply Current Icct: - lhN=0 - 120 250 mA
Vcc =14.4V, RL = 20,
POUT(1) - THD= 10% - 30 - w
Output Power POUT(2) - RL=2Q, THD= 10% 17 26 -
POUT (3) - THD=10% 16 19 -
P? Harmonic Distortion THD - POUT=1W - 0.04 0.4 %
Voltage Gain GV - - 48 50 52 dB
Voltage Gain Ratio AGV - - -1.0 0 1.0 dB
. Rg = on,
Output Noise Voltage VNO - BW=20Hz-20kHz - 0.3 0.7 mVrms
. . . . fripple=100Hz,
Ripple Rejection Ratio R.R. - Rg=6000 40 54 - dB
Input Resistance RIN - - - 30 - kn
Output Offset Voltage Voffset - VIN =0 - 100 0 100 mV
Current at Stand-by State ISB - - - 100 150 pA
R =6000
- g ' - -
Cross Talk C.T. VOUT=0-775Vrms (OdBm) 60 dB
. Stand-by-ANT
Pin?) Control Voltage V53 - (power-AON) 2.5 - VCC V
. Mute-9ON
Pin(f) Control Voltage V(Mute) - (power-SOHO - 1.0 2.0 V
7 2001-06-25
TOSHIBA
TEST CIRCUIT
TA8221AH, TA8221AL (Gv=50dB)
TA8221AH/AL
Active-High
(Power-ON)
1000#F
0.12/1F —{:l—
49 11D'
Power VCCI Power VCC2
OUT1 1
fp, lN1 +
LL 'e) - OUT2 16
1t Pre-Amp Flat-
3 w Amp
b Mute sw - PROTECTOR -
LOAD DUMP
THERMAL SHUT DOWN
LL ji) Ripple SHORT CIRCUIT
u. 'dy
Pre-GND Stand-By SW
fish, 'il'
Active-High
(Power-ON) f
TOSHIBA
TA8221AH/AL
TOTAL HARMONIC DISTORTION THD (%)
TOTAL HARMONK: DISTORTION THD (%)
THD - Poum)
Vcc=13.2V
RL=4§2
f=10kHz
0.3 0.5 1 3 5 10 30 50
OUTPUT POWER POUT (W)/CH
THD - POUT (3)
Vcc=13.2V
10 RL=29
os f=10kHZ
0.3 0.5 1 3 5 10 30 50
OUTPUT POWER POUT (W)/CH
TOTAL HARMONIC DISTORTION THD (%)
TOTAL HARMON1C DISTORTION THD (%)
THD - POUT(2)
0.3 0.5 1 3 5 10 30 50
OUTPUT POWER POUT (W)/CH
THD - POUT(4)
Vcc=10V 13.2 14.4
0.3 0.5 1 3 5 10 30 50
OUTPUT POWER POUT (W)/CH
TOSHIBA
TA8221AH/AL
Vcc=13.2V
3 POUT=1W
TOTAL HARMONIC DISTORTION THD
30 100 300 1k 3k 10k 30k 100k
FREQUENCY f (Hz)
C.T. - f
Vcc--13.2V
- 10 VOUT = 0-775Vrms
-20 (OdBm)
a" RL=4Q
'c, Rg=6000
30 100 300 1k 3k 10k 30k 100k
FREQUENCY f (Hz)
R.R. - Rg
A VCC =13.2V
3 vrip=o.775vrms
oi . -
m. frip=100Hz
g RL=40
30 100 300 1k 3k 10k 30k 100k
SIGNAL SOURCE RESISTANCE R9 (fl)
OUTPUT NOISE VOLTAGE Vuo (mvrms)
RIPPLE REJECTION RATIO R‘R.
OUTPUT POWER POUT (W)/CH
VNO - Rg
Vcc=13.2V
3 BW= 20Hz--20kHz
RL--OQ
0.5 GV-- 50dB
30 100 300 1k 3k 10k 30k 100k
SIGNAL SOURCE RESISTANCE R9 (n)
R.R. - f
Vcc--13.2V
-10 1/rip=0-775Vrms
(OdBm)
30 100 300 1k 3k 10k 30k 100k
FREQUENCY f (Hz)
POUT - Vcc
f=1kHz
THD=10% /"
0O 4 8 12 16
SUPPLY VOLTAGE Vcc (v)
TOSHIBA TA8221AH/AL
ICCQ - Vcc PD - Poum)
A 200 f=1kHz
A v =16V
g ir.. RL=4Q CC 6
.f-j' f?
E 120 p
B a THD=1%
'E 80 D
D 40 n.
0 4 8 12 16 20 24 28 0 4 8 12 16 20
POWER SUPPLY VOLTAGE Vcc (V) OUTPUT POWER POUT/CH (W)
PD - Pounz) PD MAX - Vcc
Vcc=16V
PD MAX=50W Zr~ Q
'i' - - - - - E
THD=1% E
CL 10% a
n. f=1kHz g
RL--2n g
0 8 16 24 32 40 0 2 4 6 8 10 12 14 16 18
OUTPUT POWER POUT/CH (W) POWER SUPPLY VOLTAGE Vcc (v)
PD MAX - Ta
co INFINITE HEAT SINK
Rch=1_5°C/W
© HEAT SINK
(RgH5=3.5°C/W)
Rch+RgHs=5°CIW
NO HEAT SINK
ReoA--25''C/W
ALLOWABLE POWER DISSIPATION PD MAX (W)
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE Ta (°C)
11 2001-06-25
TOSHIBA TA8221AH/AL
PACKAGE DIMENSIONS
HZlP17-P-2.00 Unit : mm
5.0:043
o! m '_..---'" n!
g! a --.rc..%' of
" CD, o ...----_., to
Te 0 N
-3- '-
2.575TYP
0.55i0.1 1.2i0.1 o.4tt.ls
36.5MAx
I 36.0i0.2
Weight : 9.8g (Typ.)
12 2001-06-25
TOSHIBA TA8221AH/AL
PACKAGE DIMENSIONS
HSlP17-P-2.00 Unit : mm
1 4.03:0.2
17.0:t0.3
10.0:03
5.0i0.3
2.575TYP
1 210.1 to.4ttls
36.5MAX
36.0:02
i--, u u u u " u " n u n " "---)
Weight : 9.8g (Typ.)
13 2001-06-25
TOSHIBA TA8221AH/AL
RESTRICTIONS ON PRODUCT USE
000707EBA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
0 The products described in this document are subject to the foreign exchange and foreign trade
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
14 2001-06-25
:
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