TA8215L ,18W BTL x 2CH Audio Power AmplifierFeatures High power : P = 18W (typ.) / channel OUT (1) (V = 14.4V, f = 1kHz, THD = 10%, R = 4Ω ..
TA8215L ,18W BTL x 2CH Audio Power AmplifierTA8215H / L TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8215H,TA8215L 18W BTL ..
TA8216H ,Dual Audio Power AmplifierTA8216H TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8216H Dual Audio Power Am ..
TA8216HQ , Dual Audio Power Amplifier
TA8216HQ , Dual Audio Power Amplifier
TA8216HQ , Dual Audio Power Amplifier
TC55VD1618FF150 ,1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
TC55VD818FF-143 ,524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAMFEATURES • Organized as 524,288 words by 18 bits • Fast cycle time of 6.6 ns minimum (150 MHz maxim ..
TC55VD836FF-133 ,262,144-WORD BY 32-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAMTC55VD836FF-133,-143,-150 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD B ..
TC55VD836FF-143 ,262,144-WORD BY 32-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAMFEATURES • Organized as 262,144 words by 36 bits • Fast cycle time of 6.6 ns minimum (150 MHz maxim ..
TC55VEM208ASTN55 ,524,288-WORD BY 8-BIT STATIC RAMTC55VEM208ASTN40,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WOR ..
TC55VEM416BXGN55 , 1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
TA8215H-TA8215L
18W BTL x 2CH Audio Power Amplifier
TA8215H / L TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8215H,TA8215L 18W BTL x 2CH Audio Power Amplifier
The thermal resistance θj−T of TA8215H and TA8215L package
designed for low thermal resistance, has a high efficiency of heat
radiation.
The temperature rise of chip can be reduced, and the influence
from the degradation of the features due to the temperature rise
at the high output can also be reduced.
This stereo audio power IC, designed for car audio use, has two
built−in channels to reduce the characteristic difference between
L and R channels.
In addition, the functions of stand−by and muting, and a variety
of protection circuits are involved.
Features High power
: POUT (1) = 18W (typ.) / channel (VCC = 14.4V, f = 1kHz, THD = 10%, RL = 4Ω) : POUT (2) = 15W (typ.) / channel (VCC = 13.2V, f = 1kHz, THD = 10%, RL = 4Ω) Low distortion ratio : THD = 0.04% (typ.) (VCC = 13.2V, f = 1kHz, POUT = 1W, RL = 4Ω, GV =
50dB) Low noise : VNO = 0.30mVrms (typ.) (VCC = 13.2V, RL = 4Ω, GV 50dB, Rg = 0Ω, BW = 20Hz~20kHz) Built−in stand−by function (with pin (4) set at low, power is turned off.)
: ISB = 1µA (typ.) Built−in muting function (with pin (1) set at low, power is turned off.)
: V(mute) = 1V (typ.) Built−in various protection circuits Protection circuits : Thermal shut down, Over voltage, Out→VCC short, Out→GND short and Out−Out short. Operating supply voltage : VCC = 9~18V
Weight
HZIP17−P−2.00 : 9.8g (typ.)
HSIP17−P−2.00 : 9.8g (typ.)
