TA8210 ,20W BTL x 2CH AUDIO POWER AMPLIFIERTA821OAH/ALTAR71 nAH TAR71 nAI"""mrr"-"""""' MW-m-MN....-The thermal resistance f?j-T of TA821OAH, ..
TA8210AH ,20W BTL ?2ch Audio Power AmplifierTA8210AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8210AH,TA8210AL 20W ..
TA8210AHQ , 20W BTL × 2ch Audio Power Amplifier
TA8210AHQ , 20W BTL × 2ch Audio Power Amplifier
TA8210AL ,20W BTL ?2ch Audio Power AmplifierTA8210AH / AL TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8210AH,TA8210AL 20W ..
TA8211AH ,Dual Audio Power AmplifierTA8211AH TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8211AH Dual Audio Power ..
TC55V8512J-15 ,524,288-WORD BY 8-BIT CMOS STATIC RAMTC55V8512J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-B ..
TC55V8512J-15 ,524,288-WORD BY 8-BIT CMOS STATIC RAMFEATURES • Single power supply voltage of 3.3 V ± 0.3 V • Fast access time (the following are maxim ..
TC55V8512JI-12 ,524,288-WORD BY 16-BIT CMOS STATIC RAMTC55V8512JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8 ..
TC55V8512JI-15 ,524,288-WORD BY 16-BIT CMOS STATIC RAMFEATURES • Single power supply voltage of 3.3 V ± 0.3 V • Fast access time (the following are maxim ..
TC55VBM316AFTN55 ,524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAMfeatures usingCE1 and CE2 • Data retention supply voltage of 1.5 to 3.6 V Access Time 40 ns 55 ns • ..
TC55VBM316AFTN55 ,524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAMapplications where high speed, low power and battery backup are required. And, with a guaranteed op ..
TA8210
20W BTL x 2CH AUDIO POWER AMPLIFIER
TOSHIBA TA8210AH/AL
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC
TA821l QAH, TA821] GAIL
20W BTLX2CH AUDIO POWER AMPLIFIER
The thermal resistance f?j-T of TA8210AH, TA8210AL TA8210AH
package designed for low thermal resistance, has a high
efficiency of heat radiation.
The temperature rise of chip can be reduced, and the
influence from the degradation of the features due to
the temperature rise at the high output can also be
reduced.
This stereo audio power IC, designed for car audio use,
has two built-in channels to reduce the characteristic
difference between L and R channels.
In addition, the functions of stand-by and muting, and a
variety of protection circuits are involved.
FEATURES
0 Low Thermal Resistance
: (?j-T--1.50C/W (Infinite Heat Sink)
. Weight
. High Power HZIP17-P-2.00 : 989 (Typ.)
1 POUT (1)=22W (Typ.)/Channel HSlP17-P-2.00 9.8g (Typ.)
(Vcc=14.4V. f=1kHz, THD=10%, RL=4Q)
POUT (2)=19W (Typ.)/Channel
(VCC=13.2V, f=1kHz, THD=10%, RL=4Q)
o Low Distortion Ratio : THD=0.04% (Typ.) (vcc=13.2v, f=1kHz, POUT=1W, RL=4Q, GV=50dB)
. Low Noise : 1/NO=0.30mVrms (Typ.) (vcc=13.2v, RL=4Q, GV=50dB, Rg=00, BW--20Hz--20kHz)
o Built-in Stand-by Function (With pin?) set a LOW, power is turned OFF.) : lsB--IpA (Typ.)
o Built-in Muting Function (With pin0) set at LOW, power is turned OFF.) : V(Mute)=1v (Typ.)
o Built-in Various Protection Circuits
Protection circuits : Thermal Shut Down, over voltage, out-WCC short, out-9GND short and OUT-
OUT Short.
0 Operating Supply Voltage : Vcc=9--18V
980508EBA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The products described in this document are subject to foreign exchange and foreign trade laws.
o The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
o T e information contained herein is subject to change without notice.
1998-05-15 1/11
TOSHIBA TA8210AH/AL
BLOCK DIAGRAM
TA8210AH, TA8210AL (GV = 50dB)
A l J, ' Ovcc
c9; 49 's1s..7/' dt
Pre-VCC Power VCCI Power VCC2 I
i. WI 6i (s
0 -g+ Ca'
N” Pre-Amp Flat- 16 "
Ui Amp U
A ti f,t,.,ah-4 h D Mute SW - PROTECTOR - _','.,,,
c Ive- lg
LOAD DUMP
Power-ON
( ) THERMAL SHUT DOWN w‘
J- IV + 8) Ripple SHORT CIRCUIT
(p I GND2 Cla?,
CI OUT3
C - n + - (P, IN2 + 11 l
“,1 li( NF2 U RL
U "dry - OUT4 T
+ 12 -
J a Pre-Amp FIat-Amp q l
I H, U;
Pre-GND Stand-By SW
Ch, cs
j':'' l'
Active-High
(Power-ON) I
CAUTIONS AND APPLICATION METHOD
(Description is made only on the single channel.)
1. Voltage gain adjustment
Am 1 : e-Am
OUT p pr p
Amp 2 : Phase Amp
Amp 3 : POWER Amp (Flat-Amp)
Amp 4 : POWER Amp (Flat-Amp)
Amp 3, Amp 4e.20dB
This IC has the amplifier construction as shown in Fig.1. The Pre-Amp (Amp 1) is provided to the
primary stage, and the input voltage is amplified by the Flat Amps, Amp 3 and Amp 4 of each
channel through the phase Amp (Amp 2).
Since the input offset is prevented by Pre-Amp when VCC is set to ON, this circuit can remarkably
reduce the pop noise.
1998-05-15 2/11
TOSHIBA
TA8210AH/AL
The total closed loop gain GV of this IC can be obtained by expression below when the closed loop
voltage gain of Amp 1 is Gv1.
R1+ (Rf+ R2)
GV1 = 208og Rf + R2
The closed loop voltage gain of POWER Amp, Amp 3
and Amp 4 is fixed at GV3'=.GV4=20dB.
Therefore, the total closed circuit voltage gain GV is
obtained through BTL connection by the expression
below.
Gv=Gv1+Gvg +6 (dB) ............... (2)
For example, when Rf=OQ, GV is obtained by the
expressions (1) and (2) as shown below.
GV'=.24+20 +6= SOdB
The voltage gain is reduced when Rf is increased. (Fig.2)
With the voltage gain reduced, since (1) the oscillation
stability is reduced, and (2) the pop noise changes when
VCC is set to ON, refer to the items 3 and 4.
2. Stand-by SW function
By means of controlling pin@ (Stand-by terminal) to High
and Low, the power supply can be set to ON and OFF.
The threshold voltage of pin?) is set at 2.1V (3VBE), and
the Power Supply current is about IPA (Typ.) at the
stand-by state.
Ping) control voltage : V(SB)
Advantage of stand-by SW
VOLTAGE GAIN GV (dB)
ON lPower
300 500 lk 3k
FEEDBACK RESISTANCE Rf (Q)
A''' ZVBE
TO BIAS
CUTTING CIRCUIT
STAND-BY POWER V(SB) (V)
ON OFF o--2
OFF ON 3“'VCC Fig.3 With pin@ set to High, Power is turned ON.
(1) Since VCC can directly be controlled to ON/OFF by the microcomputer, the switching relay
can be omitted.
(2) Since the control current is microscopic, the switching relay of small current capacity is
satisfactory for switching.
1998-05-15 3/11
TOSHIBA TA8210AH/AL
Large current capacity switch r - 1
"isxr- BATTERY BATTERY
FROM MICROCOMPUTER
U (Conventional Method) (j,
Small current capacity switch DIRECTLY FROM MICROCOMPUTER
-iCrr BATTERY I r BATTERY
4 ''s..9 4
STANDBY Vcc STANDBY Vcc
(Stand by Switch Method)
3. Preventive measure against oscillation
For preventing the oscillation, it is advisable to use C4, the condenser of polyester film having small
characteristic fluctuation of the temperature and the frequency.
The resistance R to be series applied to C4 is effective for phase correction of high frequency, and
improves the oscillation allowance.
Since the oscillation allowance is varied according to the causes described below, perform the
temperature test to check the oscillation allowance.
(1) Voltage gain to be used (GV Setting)
(2) Capacity value of condenser
(3) Kind of condenser
(4) Layout of printed board
In case of its use with the voltage gain GV reduced or with the feedback amount increased, care
must be taken because the phase-inversion is caused by the high frequency resulting in making the
oscillation viably generated.
. Input offset prevention circuit at vcc-9ON
Having the Pre-Amp (Amp 1) mounted on the primary stage, this IC contains the circuit for making
the Amp 1 input voltage and the NF terminal voltage equipotential.
Therefore, the offset voltage produced at the input stage is suppressed to prevent the pop noise at
VCC-AF. The capacity values of the input and NF condenser (C1 and C2) shall be set according to
the gain to be used.
(Reference) (A)At GV=50dB (Rf=OQ)
(B)At GV=4OdB (Rf=47on)
CI=3.3PF, c2 =33,sz
1998-05-15 4/11
TOSHIBA TA8210AH/AL
5. Muting function
Through setting pinC) (mute terminal) at about IV or less, muting becomes possible.
The interval circuit of IC is shown in Fig.4.
When pin(O is set to LOW, Q1 and Q2 are turned to ON, the charge of the ripple condenser is
discharged and the bias is cut. The mute amount of 60dB or over can be obtained.
Since this muting function rapidly discharge the charge of the ripple filter capacitor of pine, the
pop noise is generated by the DC fluctuation of the bias section.
Therefore, this muting function is not appropriate to the audio muting but it is effective in muting
at Vcc-ANI
Fig.4 Mute circuit
6. External part list and description
SYM RECOM- INFLUENCE
BOL' MENDED FEATURE SMALLER THAN LARGER THAN REMARKS
VALUE RECOMMENDED VALUE RECOMMENDED VALUE
. . Related to gain.
C1 4.7/1F DC blocking Related to pop nose at VCC-SON. Refer to item 4.
Related to pop noise at VCC-AMI.
Feedback Determination of low cut-off frequency.
c2 47pF 1
condenser C =-
2ar.ftyRf
C 220 F Ripple Time constant is small Time constant is large
3 ’4 reduction at Vcc-AON or OFF. at Vcc-AON or OFF.
C4 0.12PF Oscullatien Male liable to Oscillation allowance. Refer to item 3.
prevention oscillate.
For filtering power supply hum and ripple.
C5 1000prF Ripple filter Large at using AC rectified power supply.
Small at using DC power supply.
C6 1000pF Osallatien Oscillation allowance improved. Refer to item 3.
prevention Noise Reduction
1998-05-15 5/11
TOSHIBA TA8210AH/AL
MAXIMUM RATINGS (Ta =25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Peak Supply Voltage (0.2s) VCC (surge) 50 V
DC Supply Voltage VCC(DC) 25 V
Operating Supply Voltage Vcc(opr) 18 V
Output Current (Peak) |O(peak) 9 A
Power Dissipation PD 50 W
Operating Temperature Top, -30--85 "C
Storage Temperature Tstg - 55~150 "C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, Vcc=13.2V, RL=4Q, f=1kHz, Ta=25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN TYP. MAX. UNIT
Quiescent Supply Current lccn - lhN--0 - 120 250 mA
POUT(1) - Vcc=14.4V. THD= 10% - 22 -
Output Power POUTQ) - THD=10% 16 19 - W
Totfal Harmonic Distortion THD - POUT=1W - 0.04 0.4 %
Voltage Gain GV - - 48 50 52 dB
. R9 = oft,
Output Noise Voltage VNO - BW=20Hz--20kHz - 0.30 0.70 mVrms
. . . . fripple=100Hz,
Ripple Rejection Ratio R.R. - Rg =6000 40 54 - dB
Input Resistance RIN - - - 30 - k0
Output Offset Voltage Voffset - VIN =0 -0.3 0 0.3 mV
Current at Stand-by State ISB - - - 1 10 pA
R9 = 6000,
Cross Talk C.T. - VOUT=0-775Vrms (OdBm) - 60 - dB
. Stand-by-ANT
Pin© Control Voltage V53 - (power-SON) 2.5 - VCC V
. Mute-aON
Pino) Control Voltage V(Mute) - (power-ANT) - 1.0 2.0 V
1998-05-15 6/11
TOSHIBA TA8210AH/AL
TEST CIRCUIT
TA8210AH, TA8210AL (GV = 50dB)
- - . I OVCC
\?/ Q9 GD d? 8
Pre-VCC Power VCCI Power VCC2 l 3
C1 OUT1 -
- IN1 15 u.
C a + I cp, + «I Q,
4.7m lg NF1 U ce RL
33 g + LI. 'W - Tg
l_ N u, Pre-Amp Flat- vim
U. 3 'N, Amp E U Q,
ru' f?, 5.
A ' f,:r,.,ah-0) Mute SW - PROTECTOR -
(),c2v",'tgll LOAD DUMP
THERMAL SHUT DOWN
IV Ri I
J- + LL 8) Ippe SHORT CIRCUIT
5,1,. ft,h IN2
C sl-tu, fu. R' R
#813 LI. "dry NF2 L
l3 ru+ u, Pre-Amp FIat-Amp LL
k). l; J 1
(E, F.
Pre-GND Stand-By sw _r".i,:ij:r2ze1;
Ch, PCh
j':'' 'il'
Active-High
(Power-ON) f
1998-05-15 7/11
TOSHIBA
TA8210AH/AL
THD - PQUT(1)
Vcc=13.2V
g' 0.5 f=10kHz
Sd 0.3
I 0.05
a' 0.03
0.1 0.3 1 3 10 30 100 300
OUTPUT POWER POUT (W)
3 Vcc=13.2V
POUT=1W
TOTAL HARMONIC DISTORTION THD
30 100 300 1k 3k 10k 30k 100k
FREQUENCY f (Hz)
VNO - Rg
Vcc=13.2V
3 RL=4Q
0 100 300 1k 3k 10k 30k 100k
OUTPUT NOISE VOLTAGE VNO (mvms)
SIGNAL SOURCE RESISTANCE Rg (Q)
TOTAL HARMONIC DISTORTION THD
VOLTAGE GAIN Gv
RIPPLE REJECTION RATIO RR.
THD - POUT (2)
0.1 0.3 1 3 10 30 100 300
OUTPUT POWER POUT (W)
100 VCC =13.2V
VIN = 0.3mVrms
30 100 300 1k 3k 10k 30k 100k
FREQUENCY f (Hz)
R.R. - f
Vcc=13.2V
Vripp|e=0-775Vrms
(OdBm)
30 100 300 1k 3k 10k 30k
FREQUENCY f (Hz)
1998-05-15 8/11
TOSHIBA
TA8210AH/AL
RIPPLE REJECTION RATIO RR.
'CCQ (mA)
QUIESCENT CURRENT
POWER DISSIPATION PD (W)
R.R. - Rg
VCC = 13.2V
RL = 40
Vripple = 0.775Vrms
fripp|e=100Hz
30 100 300 1k 3k 10k 30k 100k
SIGNAL SOURCE RESISTANCE R9 (Q)
'CCQ - VCC
0 4 8 12 16 20 24 28
SUPPLY VOLTAGE VCC (V)
PD - Ta
C) INFINITE HEAT SINK RgJC=1.5°CIw
a HEAT SINK (ReHs--3.5''C/W)
R€JC+R0HS=5°C/W
c3) NO HEAT SINK RgJA=25°C/w
40 I \
20 I \\\L
-© l I A
0 I - "sd
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta (°C)
CROSS TALK C.T1 (dB)
POWER DISSIPATION PD
MAXIMUM POWER DISSIPATION PD MAX.
Vcc=13.2V
RL=4S2
VOUT=0-775Vrms
(OdBm)
30 100 300 1k 3k 10k 30k 100k
FREQUENCY f (Hz)
PD - POUT
VCC=16V f=1kHz
Dual Ope.
0 8 16 24 32 40
OUTPUT POWER POUT (W)/CH
PD MAX. - Vcc
64 l l
PD (MAX)-- 50W
48__.______ --.---- __-___
RL=4Q "
16 m,.--''''" /
w.--'"''
0 " 8 12 16 20
SUPPLY VOLTAGE VCC (v)
1998-05-15 9/11
TOSHIBA TA8210AH/AL
OUTLINE DRAWING
HZlP17-P-2.00 Unit : mm
N l, N
. to. .I .
£3 r fi', FE.-),?: - a?
" c'? ct cu 'ei
- a ts
_1_ T"
"2.575TYP
1 dWhl 0.41335
0.55AO.1 jFlriiLciiliijL
l 36.5MAX S,
I 36.0i0.2
Weight : 9.8g (Typ.)
1998-05-15 10/11
TOSHIBA TA8210AH/AL
OUTLINE DRAWING
HSlP17-P-2.00 Unit : mm
3 ' $1 - c?
" o to
____3. 'ii?
Ltf' 2.575TYP
1.2:t0.1
36.5MAX
i-x- u n In u " u u [I u a------)
Weight : 9.8g (Typ.)
1998-05-15 11/11
www.ic-phoenix.com
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