TA7274P ,12W BTL Audio Power Amolifier
TA7279AP ,DUAL BRIDGE DRIVERFUNCTIONAL DESCRIPTION 1 V IN2−AA−ch input terminal 2 V IN2−A3 V A−ch input terminal I N1−A 4 OUT1− ..
TA7279P ,DUAL BRIDGE DRIVERFEATURES Wide Range of Operating Voltage : V = 6~18 V (P, AP), CC (opr.) V = 0~16 V (P) / = 0~18 ..
TA7280P ,5.8W Dual Audio Power Amplifier. 22W BTL Audio Power Amplifier.Features High power : P = 22W (typ.) OUT (1)(V = 14.4V, f = 1kHz, THD = 10%, R = 4Ω, BTL) CC LP ..
TA7280P ,5.8W Dual Audio Power Amplifier. 22W BTL Audio Power Amplifier.Block Diagram DUAL Application Information(this explanatory terminal number is f ..
TA7281P ,5.8W Dual Audio Power Amplifier. 22W BTL Audio Power Amplifier.TA7280,81P TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7280P,TA7281P 5.8W Dua ..
TC51832F-12 ,120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAMFEATURES
. Organization: 256K bit(32,768 word x 8 bit)
. Fast Access Time and Low Power Dissipa ..
TC51832FL-10 ,100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAML---.
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32,768 WORD x 8 B ..
TC51832FL-12 ,120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAMABSOLUTE MAXIMUM RATINGS
VOUT Output Voltage
Power Supply Voltag;
TOPR Operating Temperature
..
TC51832PL-10 ,100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAML---.
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32,768 WORD x 8 B ..
TC51832PL-10 ,100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAMFEATURES
. Organization: 256K bit(32,768 word x 8 bit)
. Fast Access Time and Low Power Dissipa ..
TC51832PL-12 ,120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAML---.
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TA7274P
12W BTL Audio Power Amolifier
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IN BTL AUDIO POWER AMPLIFIER
Unit in mm
The TA7274P is audio power amplifier for consumer .
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This 1C is applying BTL system in which output 3 ' l
couppling condenser and bootstrap condenser are -il I?, I
not necessar and out ut 12H (V =13.2V R =40 'il st
y p CC , L ' V2 gfaziuz 'il 3;
THD=10r,) can be obtained. $3 . (i 4; .0
Since the package is a 7 pin SIP, (Single Inline '?ii!, .f,
Package), it greatly simplifies construction of a J 7' l ' tet _
power amplifier both in design and assembly. U U i) a g
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It also contains various kind of protector. I
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It is suitable for car-audio power amplifier z5¢io25 uetuz inus
with high performance.
_ . High Power t POUT=12W(Typ.) T JEDEC -
(VCC=13.2V, f=1kHz, THD=10%, Rirkn) TOSHIBA B'TEP-P
. Built in Protector Circuit Weight t 2.198 (TYP.)
Thermal Shut Down, Over Voltage Protector (Typ. llcty--2W)
ASO Protector (RL Short, Out to GND, Out to Vcc)
. Operating Supply Voltage Range t Vcc=9~ 18V
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Peak Supply Voltage (0.2 sec) VCC surge 45 ll
. DC Supply Voltage. VCC DC 25 V
- Operating Supply Voltage Vcc opr 18 ll
Output Current (Peak) I0(peak)> 4.5 A'
Power Dissipation PD 15 W
- Operating Temperature Thpr -30 ~85 "c
Storage Temperature Tstg -55 ~150 "c
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TEST CIRCUIT/APPLICATION CIRCUIT
6 Vcc ' § l
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ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, VCC=13.2V, RL=4Q, falkHz, Ta=25°C)
CHARACTERISTIC SYMBOL CIR- TEST CONDITION MIN. TYP MAX. UNIT
CUIT .
Quiescent Current ICCQ _ - VIN=O _ - 65 110 mh
Output Power POUT ...' THD=lOZ 10 12 - W
Total Harmonic Distortion THD - Pou’fésw - 0.4 1 2
Voltage Gain Gv - Rf=00 . 51 53 55 dB
Output Noise Voltage Wo - Rg--10kn, Bw=20Hz ~20kHz - 0.9 2.0 mVrms
Ripple Rejection Ratio R.R - fripbleBIOOHz, Rg=6oon ht) 50 - dB
Input Resistance RIN - f=1kHz - 30 - k0
Output Offset Voltage Voffsec - V1N=O , - 0 0.3 ll
TYPICAL DC VOLTAGE OF EACH TERMINAL (Vcc=13.2v, Ta=25°c)
TERMINAL No. 1 2 3 4 1 5 6 7
DC Voltage W) I TA7274P 5.4 5.4 5.4 GND 6.6 vcc 6.6
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DIRECTIONS FOR USE AND APPLICATION METHOD
{6) Vac
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AMP 2 "<§> our
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(Fig. I)
1. VOLTAGE GAIN ADJUSTMENT '
In (Fig. I), let closed loop voltage gain of Initial stage AMP: Amp 1 be Gv1, then
Gv1 5-: 20gog -a-2'd-,- (dB) . (Rl>>R2+Rf)
Also, let closed loop voltage gains of non-inverted AMP: Amp 2 and inverted AMP:
Amp 3 be sz and Gvg, respectively, then,
cv2 = 20tog £2 ' Gv3 " 20gog A-iii-lui- cis 13(dB) (thw-i-- Gv3).
Hence, the total closed circuit voltage gain CV is given by BTL connection as
f o llows t
Gv=Gv1+Gv2+6=Gv1+19 (dB) .
For instance, in the case of Rf=0, Gv=54(dB) setting can be made.
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When the dead short detecting circuit has operated, a lock condition is realized
and the power transistor ls protected.
(2) Vcc-FAULT PROTECTIVE CIRCUIT (Circuit between OUT and Vcc is shorted.)
Block diagram of Vcc-fault Protective Circuit ls shown in (Fig. M).
This circuit makes a similar operation to the GND-fault protective circuit.
In the case of half-short, the dead-short detecting circuit operates by the rise
of output terminal up to Vcc level, and protects the power transistor.
POWER TRANSISTOR
POWER DETECTION
OUTPUT POTENTIAL
BECOMES THE SAME
LEVEL WITH Vcc
DETECTION OF DEAD
SHORT BETWEEN OUT
AND V00
DRIVING CURRENT
IS CUT OFF
As. 3 Vcc FAULT ?ROTECTIVE CIRCUIT
(3) RL SHORT PROTECTIVE CIRCUIT (Circuit between OUT and OUT is shorted.)
It cuts off driving current by the power transistor power detecting circuit of
GND-fault and Vcc fault, protective circuit, and protects the power transistor.
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3. OSCILLATION PREVENTION
In this IC, GNb pin ior) pin] has only one terminal, and the Inside of TC is
divided by into Pre-GND and Pover-GN0. For this reason, pay attention to the
following points in making design. .
(1) Install the chemical condenser between Vcc and GND near 10 pin as much as
possible.
(2) Drop heat sink to (C) Pin) GND. (To prevent the detérioration of
distortion.)
(3) Use oscillation preventive condenser between output Vcc, characteristic of which
is not so much affected by temperature. When using ceramic condenser, adopt the
value larger than the recommended value, as the characteristic of ceramic
condenser is apt to be changed by temperature.
In this case, never fail to execute temperature test and check oscillation _
allowance.
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Recommended oscillation stopping condenser capacity and series resistance value
ls 0.22/11? and o.in, respectively.
Before using, fully examine the type and mounting position of condenser.
There is a poseibility of oscillation when contact resistance is prqduced by the
use of JC socket.
(h) CAPACITY VALUE OF CHEMICAL CONDENSER
When the values of input coupling and NF condenser are different, pop Noise ls
produce. Therefore, it .18 recommended, to equalize the capacity values and
adopt 4.7uF. .
(Fig. -5) shows the characteristic when the capacity of ripple condenser is
varied.
R .R - f
A .Voo=l&2v
g RL=LQ
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mums! f (Es)
(Fig.-5) R.R - f
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m + NOISE (%)
TOTAL MOHIO DISTOR'I ION
TOTAL WORK} DISTORTION m (%)
(THD+ NOISE) - POUT
Voo=132V
ah, 0.3 0.5 l 3 ti 10 GO 50
OUTPUT POWER Pom. Or)
TED - POUT
700 = 132V
10 1:11:32.
05 05 l
OUTPUT POWER POUT Or)
5510 3050
TOTAL HARMONIC DIBTORTION
quxmcm CURRENT loco. (m)
TED + NOISE (%)
(TED + NOISE) - POUT
Voo =132V
f=r10igB2
05 05 1 G 5 lil
ou'rpu'r POWER POM (w)
Vco - loco,
SUPPLY VOLTAGE Vcc (v)
tlg - f S R .It - as
g 'ro x' vcc=1azv_
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3' 50 E - -
1rr1r=0t1B.m
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w voc=1;:s.2v h
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tr =00 p. _
so 100 GOO " " 10k au 1001: E ' 0.05 Cl as 1 B 10 30
m0ch f (Rs) BIONAI, SOURCE RESISTANCE RB (m)
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vcc=1azv
BW=ZOEZ~ZOKEZ
voo=1azv
Rhr---AtLCs 0 W
Irriv= th1Bm
Ra= 1.1m
Cripple = LVOHF
RIPPLE mmc'non RATIO 11.11 (an)
OUTPUT NOISE VOLTAGE vm (mvma)
-80 0.03 til 050.5 1 3 5 10 3050 0 al 5 1 :1 5 3050
FREQUENCY f (rm) SIGNAL souncm RESISTANCE A, (n)
A VNO I00 - Ta. -
:12 E100 ' Q THD Ta
it v o
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g -20 o 20 AO 60 BO . ‘40 -20 0 20 40 60 80
c, AMBIENT TMERATURE Tn ttr) AMBIENT TEMPERATURE Ta ('0)
PD - .POUT PD - POUT
TED=10% fr--lkB:s THD=10%
A RL=4Q A
t t Vcc=16v
p? If =16V d
g g 132v
o l e 12 M 20 " EB 32 o 4 e 12 m 20 " a, 32
OUTPUT POWER Pom oo "; OUTPUT POWER POUT trr)
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Pou'r - V00 BB PD MAX - v00
MAXIMUM Pom DISSIPATION
PD MAX (W)
oum'r Pom Pom (w)
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BOPPLX VOLTAGE Vco (v) SUPPLY VOLTAGE v00 (v)
PD - Ta
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POWER DISSIPATION PD (17)
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AMBIENT TMERATURE " (T)
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