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T830400W-T830-400W
SNUBBERLESS TRIAC
T820W
T830W
SNUBBERLESS TRIAC
Symbol Parameter Value UnitIT(RMS) RMS on-state current
(360° conductionangle)
Tc= 95°C8 A
ITSM Non repetitive surge peak on-state current
(Tj initial= 25°C)= 16.7 ms cycle,60 Hz) A=10 ms
(1/2 cycle,50 Hz)
1002 tI2t Value(half-cycle,50 Hz) tp=10 ms 50 A2s
dI/dt Critical rateof riseof on-state current
Gate supply:IG= 500 mA dIG/dt=1 A/μs.
Repetitive=50 Hz A/μs
Non Repetitive 100
Tstg
Storage temperature range
Operatingjunction temperature range40to+ 15040to+ 125 °C Maximum lead temperaturefor soldering during 10sat 4.5 mm
from case
260 °C
ABSOLUTE RATINGS (limiting values)
ITRMS =8A
VDRM =VRRM= 400Vto 700V
EXCELLENT SWITCHING PERFORMANCES
INSULATINGVOLTAGE= 1500V(RMS)
U.L. RECOGNIZED: E81734
FEATURES
Symbol Parameter T820/ 830-xxxW Unit
400 600 700The T820/830W triacs use high performanceglass
passivated chip technology, housedina fully
molded plastic ISOWATT220ABpackage.
The SNUBBERLESSTM concept offers suppres-
sionof R-C network, andis suitable for applica-
tions such as phase control and static switchon
inductive and resistive loads.
DESCRIPTION
ISOWATT220AB(Plastic)
A2
(AV)=1W PGM =10W(tp=20 μs) IGM =4A(tp =20μsGATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 50 °C/W
Rth(j-c) Junctionto casefor A.C (360° conductionangle) 3.1 °C/W
THERMAL RESISTANCES
Symbol Test Conditions Quadrant T820 T830 Unit
IGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 20 30 mA
VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.5 V
VGD VD=VDRM RL=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V
tgt VD=VDRM IG= 500mA
dlG/dt= 3Aμs
Tj= 25°C I-II-III TYP 2 μs *IT= 100mA Gate open Tj= 25°C MAX 35 50
VTM *ITM= 11A tp= 380μs Tj= 25°C MAX 1.5 V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C MAX 10 μA
Tj= 125°C MAX 2 mA
dV/dt* Linear slopeupto
VD=67%VDRM Gate open
Tj= 125°C MIN 200 300 V/μs
(dV/dt)c* (dI/dt)c= 4.5 A/ms (seenote) Tj= 125°C MIN 10 20 V/μs Foreither polarity ofelectrodeA2 voltage withreferenceto electrodeA1.
Note: Inusual applications where (dI/dt)cis below4.5 A/ms,the (dV/dt)cis always lower than 10V/μs, and, therefore,itisunnecessary touse snuberR-C network accross T820W/ T830W triacs.
ELECTRICAL CHARACTERISTICS
T820W/ 830W
123 456 780180O = 180
=120
=90
=60o
=30o
T(RMS)I (A)
P(W)
Fig.1: Maximum power dissipation versus RMS
on-state current. 1020 304050 60 708090 100 110 120 1300
=180o
Tcase(C)o (A)T(RMS)
Fig.3: RMS on-state currentversuscase tempera-
ture.
Igt
Igt[Tj]
Igt[Tj=25C]o Ih[Tj]
Ih[Tj=25C]o
Fig.5: Relative variationof gate triggercurrent and
holding current versus junction temperature.
P(W) 102030405060708090 100110120 1300 -90
-125
Rth=0 C/W
2.5 C/W
5C/W
7.5 C/W
Tamb(C)o
Tcase(C)o
Fig.2: Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase)for different thermal resistances
heatsink+ contact.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.4: Thermal transient impedance junctionto
case and junctionto ambient versus pulse dura-
tion.
100 initial=25Co (A)TSM
Fig.6: Non repetitive surge peak on-state current
versus numberof cycles.
T820W/ 830W
(A). I2t(A2s)TSM1000 Tj initial=25Co TSM
tp(ms)2t
Fig.7: Non repetitive surge peak on-state current
fora sinusoidal pulse with width:tp≤ 10ms, and
correspondingvalueofI2t.
00.51 1.5 22.5 33.5 44.5 55.560.1
1000 (A)TM initialCo maxmax
Vto =0.9V =0.048 (V)TM
Fig.8: On-statecharacteristics(maximum values).
T820W/ 830W
PACKAGE MECHANICAL DATA
ISOWATT220AB
Cooling method:C
Marking: Type number
Weight: 2.1g
Recommended torque value: 0.55 m.N.
Maximum torque value :0.70 m.N.
Information furnishedis believedtobe accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsabilityforthe
consequencesofuseof such informationnorforany infringementof patentsor other rightsof third parties which may result fromits use.No
licenseis grantedby implicationor otherwiseunderany patent orpatent rightsof SGS-THOMSON Microelectronics. Specifications mentionedthis publicationare subjectto change withoutnotice. This publication supersedesand replacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsarenot authorized foruseas criticalcomponentsinlifesupport devicesor systems withoutexpress
written approvalof SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics- Printedin Italy-All rights reserved.
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REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max. 10 10.4 0.393 0.409 15.9 16.4 0.626 0.645 9.8 10.6 0.385 0.417 28.6 30.6 1.126 1.204 16typ 0.630typ 9 9.3 0.354 0.366 4.4 4.6 0.173 0.181 3 3.2 0.118 0.126 2.5 2.7 0.098 0.106 0.4 0.7 0.015 0.027 2.5 2.75 0.098 0.108 4.95 5.2 0.195 0.204 2.4 2.7 0.094 0.106 1.15 1.7 0.045 0.067 0.75 1 0.030 0.039
T820W/ 830W
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