T820-700W ,SNUBBERLESS TRIACFEATURESA An I =8A 2 1TRMSn V =V = 600V to 800VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATI ..
T820800W ,SNUBBERLESS TRIACFEATURESA An I =8A 2 1TRMSn V =V = 600V to 800VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATI ..
T820-800W ,SNUBBERLESS TRIACELECTRICAL CHARACTERISTICSSymbol Test Conditions Quadrant T820 T830 UnitI V =12V (DC) R =33Ω Tj= 25 ..
T830400W ,SNUBBERLESS TRIACFEATURESA AI =8A 2 1TRMSV =V = 400V to 700VDRM RRMGEXCELLENT SWITCHING PERFORMANCESINSULATING VOLTA ..
T830-400W ,SNUBBERLESS TRIACELECTRICAL CHARACTERISTICSSymbol Test Conditions Quadrant T820 T830 UnitI V =12V (DC) R =33Ω Tj= 25 ..
T830-700W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
TC2320TG , N- and P- Channel Enhancement-Mode Dual MOSFET
TC232COE , DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY
TC232COE , DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY
TC232COE , DUAL RS-232 TRANSMITTER/RECEIVER AND POWER SUPPLY
TC28C43EPA , BiCMOS CURRENT MODE PWM CONTROLLERS
TC28C43EPA , BiCMOS CURRENT MODE PWM CONTROLLERS
T820-700W
SNUBBERLESS TRIAC
T820-xxxW
T830-xxxWSNUBBERLESS TRIAC
ABSOLUTE RATINGS (limiting values) ITRMS =8A VDRM =VRRM= 600Vto 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE= 1500V(RMS) U.L. RECOGNIZED: E81734
FEATURESThe T820/830W triacs use high performance glass
passivated chip technology, housedina fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sionof R-C network, andis suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
DESCRIPTION
T820-xxxW / T830-xxxW (AV)=1W PGM =10W(tp=20 μs) IGM =4A(tp=20μs
GATE CHARACTERISTICS (maximum values)
THERMAL RESISTANCESFor eitherpolarityof electrodeA2 voltagewith referenceto electrodeA1.
Note:In usualapplicationswhere(dI/dt)cisbelow4.5A/ms,the (dV/dt)cisalways lowerthan10V/μs,and,therefore,itisunnecessary touse snuber R-C network accross T820W/ T830W triacs.
ELECTRICAL CHARACTERISTICS
T820-xxxW / T830-xxxW 123 456 780
P(W)
Fig.1: Maximum power dissipation versus RMS
on-state current.
10 20 30 4050607080 90 100 110 120 1300
I(A)T(RMS)
Fig.3: RMS on-state current versus case temper-
ature.
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25C]o
Ih[Tj]
Ih[Tj=25C]o
Fig.5: Relative variationof gate trigger current
and holding current versus junction temperature.
10 203040506070 8090 100 1101201300
Tcase(C)o
Fig.2: Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase)for different thermal resistances
heatsink+ contact.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Fig.4: Thermal transient impedance junctionto
case and junctionto ambient versus pulse dura-
tion.
110 100 10000
Fig.6: Non repetitive surge peak on-state current
versus numberof cycles.
T820-xxxW / T830-xxxW
Fig.7: Non repetitive surge peak on-state current
fora sinusoidal pulse with width:tp 10ms, and
corresponding valueofI2t.
00.5 11.522.5 33.5 44.55 5.560.1
I(A)TM
Fig.8: On-state characteristics (maximum val-
ues).
T820-xxxW / T830-xxxW
PACKAGE MECHANICAL DATAISOWATT220AB
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http:// Cooling method:C Marking: Type number Weight: 2.1g Recommended torque value: 0.55 m.N. Maximum torque value: 0.70 m.N.
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