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T820-600W-T820-600W.-T820800W-T820-800W-T830-700W Fast Delivery,Good Price
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T820-600W |T820600WSTN/a100avaiSNUBBERLESS TRIAC
T820-600W. |T820600WSTN/a50avaiSNUBBERLESS TRIAC
T820800WSTN/a39avaiSNUBBERLESS TRIAC
T820-800W |T820800WSTN/a39avaiSNUBBERLESS TRIAC
T830-700W |T830700WSTN/a50avaiSNUBBERLESS TRIAC
T830800WSTN/a4avaiSNUBBERLESS TRIAC
T830-800W |T830800WSTN/a21000avaiSNUBBERLESS TRIAC


T830-800W ,SNUBBERLESS TRIACFEATURESA An I =8A 2 1TRMSn V =V = 600V to 800VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATI ..
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T835-600B-TR ,8A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit²I RMS on-state current (full sine wave)T(RMS) D ..
T835-600B-TR ,8A TRIACSBTA/BTB08 and T8 Series®SNUBBERLESS™, LOGIC LEVEL & STANDARD 8A TRIACS MAIN
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T820-600W-T820-600W.-T820800W-T820-800W-T830-700W-T830800W-T830-800W
SNUBBERLESS TRIAC
T820-xxxW
T830-xxxW

SNUBBERLESS TRIAC
ABSOLUTE RATINGS
(limiting values) ITRMS =8A VDRM =VRRM= 600Vto 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE= 1500V(RMS) U.L. RECOGNIZED: E81734
FEATURES

The T820/830W triacs use high performance glass
passivated chip technology, housedina fully
molded plastic ISOWATT220AB package.
The SNUBBERLESSTM concept offers suppres-
sionof R-C network, andis suitable for applica-
tions such as phase control and static switch on
inductive and resistive loads.
DESCRIPTION
T820-xxxW / T830-xxxW (AV)=1W PGM =10W(tp=20 μs) IGM =4A(tp=20μs
GATE CHARACTERISTICS
(maximum values)
THERMAL RESISTANCES
For eitherpolarityof electrodeA2 voltagewith referenceto electrodeA1.
Note:In
usualapplicationswhere(dI/dt)cisbelow4.5A/ms,the (dV/dt)cisalways lowerthan10V/μs,and,therefore,itisunnecessary touse snuber R-C network accross T820W/ T830W triacs.
ELECTRICAL CHARACTERISTICS
T820-xxxW / T830-xxxW 123 456 780
P(W)
Fig.1:
Maximum power dissipation versus RMS
on-state current. 10 20 30 4050607080 90 100 110 120 1300
I(A)T(RMS)
Fig.3:
RMS on-state current versus case temper-
ature.
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25C]
o Ih[Tj]
Ih[Tj=25C]
o
Fig.5:
Relative variationof gate trigger current
and holding current versus junction temperature. 10 203040506070 8090 100 1101201300
Tcase(C)o
Fig.2:
Correlation between maximum power dissi-
pation and maximum allowable temperature
(Tamb and Tcase)for different thermal resistances
heatsink+ contact.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth/Rth
Fig.4:
Thermal transient impedance junctionto
case and junctionto ambient versus pulse dura-
tion.
110 100 10000
Fig.6:
Non repetitive surge peak on-state current
versus numberof cycles.
T820-xxxW / T830-xxxW
Fig.7:
Non repetitive surge peak on-state current
fora sinusoidal pulse with width:tp 10ms, and
corresponding valueofI2t.
00.5 11.522.5 33.5 44.55 5.560.1
I(A)TM
Fig.8:
On-state characteristics (maximum val-
ues).
T820-xxxW / T830-xxxW
PACKAGE MECHANICAL DATA

ISOWATT220AB
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Cooling method:C Marking: Type number Weight: 2.1g Recommended torque value: 0.55 m.N. Maximum torque value: 0.70 m.N.
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