T4 ,4A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI RMS on-state current (full sine wave) DPAK / I ..
T405 ,4A TRIACSABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitI RMS on-state current (full sine wave) DPAK / I ..
T40-5 ,4A TRIACSFEATURES:A2Symbol Value UnitGI4AT(RMS)A1V /V600 to 800 V A2DRM RRMA2IGTT (Q ) 5 to 35 mA1A1A2A1GA2G ..
T405-400T , Absolute Maximum Ratings
T405-600B ,4A TRIACST4 Series®SNUBBERLESS™ & LOGIC LEVEL 4A TRIACS MAIN
T405-600BTR ,4A TRIACSFEATURES:A2Symbol Value UnitGI4AT(RMS)A1V /V600 to 800 V A2DRM RRMA2IGTT (Q ) 5 to 35 mA1A1A2A1GA2G ..
TB1800H-13 , 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB1800L-13 , 30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB1800M-13 , 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
TB2104F ,Bi .CMOS Integrated Circuit Silicon Monolithic VFD DriverFeatures Incorporates a shift register, latch, and driver capable of handling 20 bits of data. ..
TB2110FN ,PLL For DTSFeatures Due to a Bi−CMOS structure, the 1.5V power supply is stepped up and stabilized by a bip ..
TB2110FN ,PLL For DTSTB2110FN TOSHIBA Bi−CMOS Integrated Circuit Silicon Monolithic TB2110FN PLL For DTS The TB2110F ..
T4-T405-600BTR
4A TRIACS
1/8
T4 Series
SNUBBERLESS™ & LOGIC LEVEL 4A TRIACS
June 2003 - Ed: 5
MAIN FEATURES:
DESCRIPTIONBased on ST’s Snubberless / Logic level technolo-
gy providing high commutation performances, the
T4 series is suitable for use on AC inductive loads.
They are recommended for applications using
universal motors, electrovalves.... such as kitchen
aid equipments, power tools, dishwashers,...
Available in a fully insulated package, the
T4...-...W version complies with UL standards (ref.
E81734).
ABSOLUTE MAXIMUM RATINGS
T4 Series2/8
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCESS = Copper surface under tab
T4 Series3/8
PRODUCT SELECTOR
OTHER INFORMATION
Note: xx = sensitivity, yyy = voltage
T4 Series4/8
Fig. 1: Maximum power dissipation versus RMSon-state current (full cycle).
Fig. 2-1: RMS on-state current case versus tem-perature (full cycle).
Fig. 2-2: RMS on-state current versus ambienttemperature (printed circuit FR4, copper thick-
ness: 35μm),full cycle.
Fig. 3: Relative variation of thermal impedanceversus pulse duration.
Fig. 4: Relative variation of gate trigger current,holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
T4 Series5/8
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width< 10ms, and corresponding value of I²t.
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35μm).
T4 Series6/8
PACKAGE MECHANICAL DATADPAK (Plastic)
FOOTPRINT DIMENSIONS (in millimeters)DPAK (Plastic)