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SUU50N03-07
N-Channel 30-V (D-S) 175C MOSFET
"ii=iir
VISHAY
SUU50N03-07
Vishay Siliconix
N-Channel 30-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (AP b
0.007@VGs= 10v 25
30 0.010@VGs=4.5V 18
T0-251
Top IAew
Order Number:
SUU50NO3-07
H H H and DRAIN-TAB
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V05 30
Gate-Source Voltage VGS $20
TA = 25°C 25
Continuous Drain Current (T: = 175°C)a, b ID
TA = 100°C 18
Pulsed Drain Current IBM 100
Continuous Source Current (Diode Conduction)", b Is 25
Tc = 25°C 88
Maximum Power Dissipation PD W
TA=25°C 8.3a,to
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 15 18
V - -A V R
Junction to mblenta Steady State WA 40 50 °CNV
Junction-to-Case Rthuc 1.4 1.7
a. Surface Mounted on I" x1" FR4 Board.
b. t s 10 sec.
Document Number: 71295 www.vishay.com
S-01707-Rev. A, 07-Aug-00
SUU50N03-07
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 30
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 LA 1.0 2.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V ch 100 nA
VDs=30V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=30V.VGS=0V,TJ=125°C 50
On-State Drain Currentb lD(on) VDS = 5 V, VGS = 10 V 50 A
Vas-- 10 V, ID=20A 0.007
Drain-Source On-State Resistanceb rDs(on) VGS = 10 V, lo = 20 A, TJ = 125°C 0.011 Q
VGs=4-5 V, ID=20A 0.010
Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 20 S
Dynamica
Input Capacitance Ciss 3720
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 715 pF
Reverse Transfer Capacitance Crss 370
Total Gate Charges Qg 60 120
Gate-Source Chargec Q95 VDS = 15 V, VGS = 10 V, ID = 50 A 12 n0
Gate-Drain Chargec di IO
Turn-On Delay Timec tum") 11 25
Rise Timec tr VDD = 15 V, RL = 0.3 Q 6 15 ns
Turn-Off Delay TimeC timgt) ID _ 50 A, VGEN = 10 V, Re = 2.5 Q 50 100
Fall Timec If 11 20
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 100
Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5
Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 Afys 45 100 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 us. duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com Document Number: 71295
2 S-01707-Reu. A, 07-Aug-00
VISHAY §UU50N03 07
Vishay SiliConix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 r 1 1 120
VGS=10thru6V 5V
Cai' Ci.:.] 80
E 150 E
'ii / tg
O 4 V O 60
S 100 I' Tc = 125°C I
‘? til 40
- 50 - 25°C I //
2 v 3 v 20 \I I
_ 1 5 -551
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
120 l 0.020
TC = -55"C
100 ---
A o A 0.015
<9, /'''''" l 25 C E
8 80 I 8
!si. g
g 125°C E 4
l? 60 if' 0.010 VGs= 4_5v --"''''"
2 o VGS = 10 v
S 40 l
j, J) 0.005
U) 20 9
0 0.000
0 IO 20 30 40 50 0 20 40 60 80 100
ID - Drain Current(A) ID - Drain Current(A)
Capacitance Gate Charge
5000 10
_ v = 15 v
4000 Ciss E 8 - 100350 A
8 3000 i', 6
o 2000 g 4 f
O " C 'i' /
1000 's---....,..., oss 8 2
0 6 12 18 24 30 0 12 24 36 48 60
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71295 www.vishay.com
S-01707-Rev. A, 07-Aug-00 3
SUU50N03-07
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0 I _ I 100
VGS = 10 V
ID = 30 A
A 1 6 l/ T J = 150°C
Cl " A
V w,,.''''' 5..t.t
cc A l u.)
m RD 1.2 k:
E 93 " D
m = / Q
tD w u) 10
u; E ',,--'" F?
r: o / :1
O E 0.8 e JI
.5, co
(l? 0.4 -
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
30 1000
Limited by roswn)
Sic 100 I
24 'ss
as Ct"
LE; 18 "ss. g 10
g 12 "ss. g' 1
I 'ts I
o N, Ln
6 TA = 25°C
0.1 Single Pulse
0 0.01
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C) Vros - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
'if',' g
J.l tt5
Single Pulse
10-4 10-3 10-2 IO-I 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71295
S-01707-Reu. A, 07-Aug-00
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