SUP65P04-15 ,P-Channel 40-V (D-S) 175C MOSFET FaxBack 408-970-5600S-00831—Rev. A, 01-May-002-1SUP/SUB65P04-15New ProductVishay Siliconix ..
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SUP65P04-15
P-Channel 40-V (D-S) 175C MOSFET
VISHAY
SUP/SUB65P04-15
New Product Vishay Siliconix
P-Channel 40-V (D-S) 1750C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.015@VGS= -10 V -65
0.023 @ VGS = -A.5 V -50
TO-220AB
C) T0-263
DRAIN connected to TAB H U H
Top View
G D S D
Top View SUB65P04-15
SUP65PO4-15
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -A0
Gate-Source Voltage VGS ck 20 V
Continuous Drain Current TC = 25°C ko -65
(TJ =175 C) Tc = 125°C -37 A
Pulsed Drain Current 'DM -240
Avalanche Current 'AR Mio
Repetitive Avalanche Energya L = 0.1 mH EAR 180 mJ
Tc = 25°C (TO-220AB and TO-263) 120c
Power Dissipation PD W
TA = 25°C (TO-263)b 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)b RthJA 40
Junction-to-Ambient
Free Air (TO-220AB) RNA 62.5 "C/W
Junction-to-Case RthJC 1.25
Notes:
a. Duty cycle 5 1%.
b. When mounted on I" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
Document Number: 71174
S-00831-Rev. A, Ol-May-OO
www.vishay.com . FaxBack 408-970-5600
SUPlSUB65P04-15
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 11A _40
Gate Threshold Voltage Vegan) VDs = VGS, ID = -250 11A -1 -3 V
Gate-Body Leakage less VDS = 0 V, VGS = 120 V i 100 nA
VDs=-40V,VGs=0V -1
Zero Gate Voltage Drain Current Iross Vos = -A0 V, VGS = 0 V, T: = 125°C -50 “A
v03: -A0 v,sz=ov, TJ = 175°C -250
On-State Drain Currents low”) Vros = -5 V, VGS = -10 V -120 A
VGs=-10 V, ID=-30A 0.012 0.015
VGS = -10 V, ID = -30 A, TJ = 125°C 0.024 Q
Drain-Source On-State Resistancea rDS(on)
VGs=-10 V, II): -30A,Tv=1750C 0.030
VGS = -A.5 V, ID = -20 A 0.018 0.023
Forward Transconductancea gfs VDS = -1 5 V, ID = -50 A 20 S
Dynamic"
Input Capacitance Ciss 5400
Output Capacitance Coss VGS = 0 V, Vos = -25 V, f= 1 MHz 640 pF
Reversen Transfer Capacitance Crss 300
Total Gate Chargec Q9 85 130
Gate-Source ChargeC Qgs Vos = -20 V, VGS = -10 V, ID = -65 A 25 no
Gate-Drain Chargec di 15
Turn-On Delay Timec tdwn) 15 25
Rise Timec tr VDD = -20 V, RL = 0.3 Q 380 580 ns
Turn-Off Delay Timec td(oti) b = -65 A, VGEN = -10 V, Rs = 2.5 Q 75 115
Fall Timec if 140 210
Source-Drain Diode Ratings and Characteristics (Tc = 25"C)b
Continuous Current Is -65
Pulsed Current ISM -240 A
Forward Voltagea I/sro IF = -65 A, VGS = 0 V -1.2 -1.5 V
Reverse Recovery Time trr 40 80 ns
Peak Reverse Recovery Current IRWREC) IF = -65 A, di/dt = 100 Alps 2.0 4 A
Reverse Recovery Charge Qrr 0.04 0.1 “C
Notes:
a. Pulse test; pulse width s 300 ps. duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600
Document Number: 71174
S-00831-Rev. A, Ol-May-OO
VISH:AY SUP/SUB65P04 15
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 I 100
Vss=10thru7V (
200 f 80
E 150 l E 60
(,-z, 100 -- % 4O
t5 _ 5
I I - o
D D ITC - 125 C
- 50 4V - - 20 25°C
3, 2 V -55''C
0 2 4 6 8 10 O 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
80 I l 0.04
TC = -55''C
/ 25°C
60 0.03
_iri" /" 125°C f.',
g 'VCC, 8
ii / "s,,,---'"' ‘3 VGS = 4.5 V /
E 40 f iii 0.02 /
16 V68 = 10 V
L, 20 g 0.01
0 20 40 60 80 100 O 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
8000 20
v = 20 v /
6000 k C S 16 - IUD: 65A ',/'"
E ' I i?
E’: g o,,w''
© > 12
'ti 4000 (,8) /
8 f'; 8 /
I ( g''
0 2000 I
Nss.,. oss Crss 0
"'"""-------" >
O 6 12 18 24 3O 0 40 80 120 160
VDs - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71174
www.vishay.com . FaxBack 408-970-5600
S-00831-Rev. A, Ol-May-OO
SUPlSUB65P04-15
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Iss :012V w,.,,,,,,,,"'''''''''''
1.5 ///
rDS(on) — On-Resistance( 9)
(Normalized)
-50 -25 0 25 50 75 100 125 150 175
T J - Junction TemperatureCC)
Avalanche Current vs. Time
I Dav (a)
IAV (A) @ TA-- 25''C
IAV (A) @ TA=15O°C
0.00001 0.0001
0.001 0.01 0.1 1
tin (Sec)
Is — Source Current(A)
V(BR)DSS (V)
Source-Drain Diode Forward Voltage
Tv-- 150°C
O 0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
ID = 250 “A
w,,,,-''''''"
o.,,,,,.-'''''
50 /,4
45 ,4/
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature(°C)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71174
S-00831-Rev. A, Ol-May-OO
VISHAY SUP/SUB65P04 15
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
75 1000
60 Limited
100 by rDS(on)
Cii "ss Ci.::
"t' 45 (fi'
g 's,, g
0 o 10
E "s, E
t5 30 , t5
E N, E 1
15 To = 25°C
Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Case Temperature CC) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
E g " Notes:
'8 , 0.1 PDM
a.) - i
E a 0.1 t
y, _ 0.05 1. Duty Cycle, D = il,
E 0 02 2. Per Unit Base = RNA = 62.5°C/W
a "s, I I 3, TJM - TA = PDMZthsA(t)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71174 www.vishay.com . FaxBack 408-970-5600
S-00831-Rev. A, Ol-May-OO 2-5
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