SUP45N03-13L ,N-Channel Enhancement-Mode TransistorS-05011—Rev. F, 29-Oct-013C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
SUP57N20-33 ,N-Channel 200-V (D-S) 175C MOSFETS-22449—Rev. A, 20-Jan-03 1SUP57N20-33New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTH ..
SUP60N06-18 ,N-Channel Enhancement-Mode TransSUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175C MOSFET
SUP45N03-13L
N-Channel Enhancement-Mode Transistor
VISHAY
SUP45N03-13L
N-Channel 30-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
ay Siliconix
CG . Jo''
V(BR)DSS (V) rDS(on) (Q) In (A) "t 5““c\\°
0.013@VGs =10V 45a A 13¢“‘“
30 0.02 @ VGS = 4.5 v 45a tV
T0-220AB D
DRAIN connected to TAB
G D s s
Top Mew
SUP45N03-13L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V03 30
Gate-Source Voltage VGS i 10 V
TC = 25°C 456
Continuous Drain Current (TJ = 175°C) ID
TC = 125°C 34a A
Pulsed Drain Current IBM 100
Avalanche Current IAR 45
Repetitive Avalanche Energyb L = 0.1 mH EAR 100 mJ
Maximum Power Dissipationb Tc = 25°C PD 880 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient Free Air RNA 85
Junction-to-Case Rch 1.7
a. Package limited.
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http:/Mww.vishay.com/www/product/spice.htm
Document Number: 70804 www.vishay.com
S-05011-ReV. F, 29-Oct-01
SUP45N03-13L “3%
Vishay Siliconix
MOSFET SPECIFICATIONS ITU =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 pA 3O
Gate Threshold Voltage Vegan) VDS = VGs, IDS = 250 WA 1 3 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = $20 V i 100 nA
Vos-- 30V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDs = 30 V, I/ss = 0 V, T: = 125°C 50 11A
v.33: 30v,vGS=0v,TJ=175°C 150
On-State Drain Currenta low“) Vros = 5 V, VGs = 10 V 45 A
sz=10v, ID= 45A 0.01 0.013
VGs= 10V, ID=45 A,TJ= 125°C 0.0155 0.02
Drain-Source On-State Resistancea rDs(0n) VGS = 10 V, ID = 45 A, TJ = 175°C 0.02 0.026 Q
VGS = 4.5 V, ID = 20 A 0.0145 0.02
Forward Transconductancea gfs VDS = 15 V, ID = 45 A 20 S
Dynamicb
Input Capacitance Ciss 2730
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 450 pF
Reversen Transfer Capacitance Crss 220
Total Gate Chargec % 45 7O
Gate-Source Chargec Qgs Vos = 15 M N/ss = 10 V, ID = 45A 8.5 nC
Gate-Drain ChargeC di 8
Turn-On Delay TimeC tum") 11 20
Rise Timec tr VDD = 15 V. RL = 0.33 Q 9 20 ns
Turn-Off Delay Timec td(off) ID = 45 A, VGEN = 10 V, Rs = 2.5 Q 38 70
Fall Timec if 11 20
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 45
Pulsed Current ISM 100 A
Forward Voltage" VSD IF = 45 A, VGS = O V 1 1.3 V
Reverse Recovery Time trr 35 70 ns
Peak Reverse Recovery Current IRWREC) IF = 45 A, di/dt = 100 Alps 1.7 A
Reverse Recovery Charge Qrr 0.03 pC
Notes:
a. Pulsetest; pulse width S 300 ps, duty cycle 3 2%.
e. Guaranteed by design, not subject to production testing.
b. Independent of operating temperature.
www.vishay.com Document Number: 70804
2 S-05011-Rev, F, 29-Oct-01
VISHAY
SUP45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS=10thru6V 5V
(f, 4 V
f 30 I
O 2 4 6 8 IO
VDS - Drain-to-Source Voltage (V)
Transconductance
TC = -551
o.,----"""'''"'
A 60 / 25°C -
v /'" w
:2 / ws''""'' 125°C
I? 40 F
o s,,,,,,-'''''''''''
O 10 20 30 4O 50 60
V93 - Gate-to-Source Voltage (V)
Capacitance
t, Ciss
g 2000
1000 's. Coss
0 6 12 18 24 30
Vos - Drain-to-Source Voltage (V)
rosmn) — On-Resistance ( Q) | D — Drain Current (A)
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
Tc = 125°C
25°C /,f
\4/ -55''C
0 1 2 3 4 5
N/ss - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.02 j
VGS = 4.5 v m.,,,-''"
VGS = 10 V
O 20 40 60 80
ID - Drain Current (A)
Gate Charge
VGS=15V A
8- ID=45A "
0 IO 20 30 40 50
% - Total Gate Charge (nC)
DocumentNumber: 70804
S-05011-ReV. F, 29-Oct-01
www.vishay.com
SUP45N03-13L VISHAY
Vishay
Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 45 A
o it, T = 1 Ct
§ A 1.5 // E J 50 C
Ef B 'll
a 2 w'''''' a
ttt E o IO
8 g ',,,,w''''' g
A 1.0 I
Jd -,,,,,,,--'"" _
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs. .
Case Temperature Safe Operating Area
60 200
50 100
Ct 40 's. ii:.]
E 'ss, E
8 30 \ 8
(rl, "N, (rl, 10
I 20 \ I
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Case Temperature (°C) Vros - Drain-to-Source Voltage (V)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
10-5 IO-A 10-3 1o-2 IO-I 1 3
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70804
S-05011-Rev, F, 29-Oct-01
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