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SUP18N15-95
N-Channel 150-V (D-S) 175C MOSFET
VISHAY
SUP18N15-95
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.095@VGS=10V 18
150 0.100@VGS=6V 17.5
TO-220AB
DRAIN connected to TAB
Top Mew
SUP18N15-95
FEATURES
. TrenchFET© Power MOSFETS
. 175°C Junction Temperature
APPLICATIONS
o 42-V Automotive Bus
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDs 150
Gate-Source Voltage VGS $20
Tc = 25''C 18
Continuous Drain Current (T: = 175°C) ID
Tc = 125°C 10.3
Pulsed Drain Current IBM 25
Avalanche Current IAR 15
Repetitive Avalanche Energya L = 0.1 mH EAR 16.2 mJ
Maximum Power Dissipation" Tc = 25''C Po 88b W
Operating Junction and Storage Temperature Range To, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (Free Air) RthJA 85 "C/IN
Junction-to-Case RthJC 1.7
a. Duty cycle s 1%.
b. See SOA curve for voltage derating.
Document Number: 71642 www.vishay.com
S-04093-Rev. A, 25-Jun-01
Vishay Siliconix New Product
SPECIFICATIONS ITU = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)Dss VGS = 0 V, ID = 250 WA 150
Gate Threshold Voltage VGs(m) I/os = VGS, ID = 250 " 2 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = $20 V i 100 nA
VDs=120V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDs = 120 V, VGS = 0 V, T: = 125°C 50 11A
vDs=120v,vGS=0v,TJ=175°c 250
On-State Drain Currentb low“) Vros = 5 V, VGS = 10 V 25 A
VGS = 10 V, ID = 15 A 0.077 0.095
VGS=1OV,ID=15A,TJ=125°C 0.190
Drain-Source On-State Resistanceb rDs(0n) Q
VGS=10V,|D=15A,TJ=175°C 0.250
VGs=6\/.ID=10A 0.081 0.100
Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 25 S
Dynamica
Input Capacitance Ciss 900
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 115 pF
Reverse Transfer Capacitance Crss 70
Total Gate Chargec % 20 25
Gate-Source Chargec Qgs Vos = 75 V, N/ss = 10 M ID = 15 A 5.5 nC
Gate-Drain ChargeC di 7
Turn-On Delay TimeC tum") 8 12
Rise Timec tr VDD = 75 V, RL = 5 Q 35 55 ns
Turn-Off Delay TimeC tis(om lo E 15 A, VGEN = 10 V, Re = 2.5 Q 17 25
Fall Timec 1f 30 45
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 15
Pulsed Current ISM 25 A
Forward Voltage" VSD IF = 15 A, VGS = O V 0.9 1.5 V
Reverse Recovery Time trr 55 85 ns
Peak Reverse Recovery Current IRWREC) IF = 15 A, di/dt = 100 N118 5 8 A
Reverse Recovery Charge Qrr 0.13 0.34 110
Notes:
a. Pulsetest; pulse width S 300 ps, duty cycle 3 2%.
c. Guaranteed by design, not subject to production testing.
b. Independent of operating temperature.
www.vishay.com Document Number: 71642
2 S-04093-Reu A, 25-Jun-01
VISHAY
SUP18N15-95
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
, VGS=10thru6V
Cai' Ci.:.]
Tz,' 15 "t'
tz 5 V t:
s 10 S
3 V N 4 v
O 2 4 6 8 IO
VDS - Drain-to-Source Voltage (V)
Transconductance
Tc = -55''C
- 25°C A
:3 /''''' 1 3
o l C2
g 24 ( 125°C - g
g /,(,C1''','C,,'.i', E
c w--""'''" k'!
8 l / é
m 16 C)
tts ,,,w'''" A
'T (jp'''' C
c, 8 a
0 5 10 15 20 25
ID - Drain Current (A)
Capacitance
1200 E
V Ciss 6
8 900 i',
8 600 (i-';
300 Crss 8
xf Coss >
"tmm-..-,
0 1 =F=lrtl=mrq
0 20 4O 60 80 100
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
TC = 125°C
5 25°C v]
Li. -55oC
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10 /
VGS = 6 V w,,,,,,,.,,,---'''"
0.08 s,.....---""
_..-..----""
VGS = 10 V
0 5 10 15 20 25
ID - Drain Current (A)
Gate Charge
VDS = 75 V
16 - ID = 15 l
0 8 16 24 32 40
% - Total Gate Charge (nC)
Document Number: 71642
S-04093-Rev. A, 25-Jun-01
www.vishay.com
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.8 l _ I 100
VGS = 10 V /
2.4 _- I = 15A
A D pr
V 2.0 A
'b' i,1i;
- a: h o
iii-,?, 1.6 // t TJ=1500
u; E 8 10
6 'l. 1.2 2
(7‘3) 0.8 // J)
f? r.,-'''"' -
-50 -25 0 25 50 75 100 125 150 175 0 02 0.6 0.9 1.2
To - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
Drain-Source Voltage Breakdown
vs. Junction Temperature
180 ',w'''''"
E o,,,,,,-'''''"
m 170 "
E' 165
155 //
-50 -25 0 25 50 75 100 125 150 175
T: - Junction Temperature CC)
www.vishay.com DocumentNumber: 71642
4 S-04093-Reu A, 25-Jun-01
VISHAY
SUP18N15-95
New Product Vishay Siliconix
THERMAL RATINGS
Normalized Effective Transient
| D — Drain Current (A)
Thermal Impedance
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
20 100
15 ss. rDS(on)
"s, ii.:.". 10
"ss, E
10 ic 8
"ss, I'
TC = 25°C
Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100 1000
Tc - Case Temperature CC) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
t 0.02
Single Pulse
10-2 10-1 1
Square Wave Pulse Duration (sec)
Document Number: 71642
S-04093-Rev. A, 25-Jun-01
www.vishay.com
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