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SUM85N15-19
N-Channel 150-V (D-S) 175C MOSFET
VISHAY SUM85N15-19
New Product Vishay Siliconix
N-Channel 150-V (D-S) 175°C MOSFET
FEATURES
. TrenchFET© Power MOSFETS
. 175°C Junction Temperature
PRODUCT SUMMARY . New Low Thermal Resistance Package
V(BR)DSS (V) rDS(on) (Q) ID (A) APPLICATIONS
150 0.019@Vss=10V 85a
. Primary Side Switch
. Automotive
- 42-V EPS and ABS
D - DC/DC Conversion
- Motor Drives
TO-263
Top Were
SUM85N15-19
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150
Gate-Source Voltage VGS :t 20 V
To = 25°C 85a
Continuous Drain Current (TJ = 175°C) ID
TC = 125°C 50a A
Pulsed Drain Current IDM 180
Avalanche Current IAR 50
Repetitive Avalanche Energyb L = 0.1 mH EAR 125 mJ
Tc = 25°C 375c
Maximum Power Dissipationb Pro W
TA = 25°Cd 3.75
Operating Junction and Storage Temperature Range Tu, Tsig -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mount (TO-263)d RthJA 40
Junction-to-Case (Drain) RthJC 0.4
a. Package limited.
b. Duty cycle 2 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 71703 www.vishay.com
S-04889-Rev. A, 15-Oct-01 1
SUM85N15-19 “3%
Vishay SiliConix New Product
SPECIFICATIONS ITa =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 pA 150 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 0A 2 4
Gate-Body Leakage less VDS = O V, VGs = cl: 20 V i 100 nA
VDS=120V,VGS=0V 1
Zero Gate Voltage Drain Current 'Dss Vos = 120 V, I/ss = 0 V, To = 125°C 50 g/k
1/Ds=120V,VGs=0V,TJ=1750C 250
On-State Drain Currenta loam) VDS 2 5 V, VGS = 10 V 120 A
VGS=10V.ID=30A 0.015 0.019
Drain-Source On-State Resistance" roam) VGS = 10 V, ID = 30 A, To = 125°C 0.038 Q
VGS=10V. ID=30A,TJ=175°C 0.050
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 S
Dynamicb
Input Capacitance Ciss 4750
Output Capacitance Coss VGS = 0 V, Vos = 25 V, f= 1 MHz 530 pF
Reverse Transfer Capacitance Crss 220
Total Gate Chargec Q9 76 110
Gate-Source Chargec Qgs VDS = 75 V, VGS = 10 V, ID = 85 A 21 nC
Gate-Drain Chargec di 26
Turn-On Delay Time0 tam) 22 35
Rise Time tr VDD = 75 V, RL = os Q 170 250 ns
Turn-Off Delay Timec td(ott) k, E 85 A, VGEN = 10 V, Rs = 2.5 Q 40 60
Fall Tlmec tf 170 250
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is 85
Pulsed Current ISM 180
Forward Voltagea VSD IF = 85 A, VGs = 0 V 1.0 1.5 V
Reverse Recovery Time trr 130 200 ns
Peak Reverse Recovery Current IRWREC) IF = 50 A, di/dt = 100 Alps 8 12 A
Reverse Recovery Charge Qrr 0.52 1.2 uC
a. Pulsetest; pulse width s 300 ps. duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com Document Number: 71703
2 S-04889-Rev, A, 15-Oct-01
VISHAY SUM85N15-19
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
180 180
f'' VGS=1Othru7V
150 1 150
r....----'-"""""' 6 V
E 120 / E 120
(D G.)
c 90 c 90
Cl D ///
c. 60 D 60 I
- - To = 125°C
5 v 1 I
30 30 25°C f
4 v l \Ij/ -55''C
0 2 4 6 8 10 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
180 1 0.04
Tc = -551
150 -.....Lr-----
A w,,,,,,-''"''''''"'''''" 25°C 9’, 0.03
8 120 g
c -''''" -
(l,'. w,,.,--'''''"" 125°C '3
' I (D
l? 90 r ttf (h02 7 Vss =10 V o-.--'''''''
' /v(1'',',',.C. o ----"'
E 60 / / I
_ " "ii,'
:w. it" 0.01
CD 30 =
0 0.00
O 20 40 60 80 100 120 0 20 4O 60 80 100 120
ID - Drain Current(A) ID - Drain Current(A)
Capacitance Gate Charge
7000 20 /'"
6000 V = 75 V
[8 16 - ID = 85 A /
EL; 5000 g' "
iii' Jr' 12 /
g 4000 g "
% 3000 g 8 /
U 2000 (D I-'
1000 >
0 25 50 75 100 125 150 0 25 50 75 100 125 150
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71703 www.vishay.com
S-04889-Rev. A, 15-Oct-01 3
Vishay Siliconix
N15-19
New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
VGS=10V
b=30A //
rDS(on) — On-Resistance (S2)
(Normallzed)
-50 -25 0 25 50 75 100 125 150 175
Is — Source Current (A)
Source-Drain Diode Forward Voltage
TJ =150°C
0 0.3 0.6 0.9 1.2
T: - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 190
180 i I =1.0mA /
100 D /’
'r' w,,,-''''
A (l) l
g 'ld 170 "
E 10 IAv(A) @TA= 25°C b' ',,,,w'''''
160 s,,,,,,,,,,,,,""''''''
150 ,/
IAV (A) @ TA=150°C
0.1 140
0.00001 0.0001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) TJ - Junction Temperature (°C)
www.vishay.com DocumentNumber: 71703
S-04889-Rev, A, 15-Oct-01
VISHAY SUM85N15-19
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
90 1000
Limited
by rDS(on)
75 's,
Cd.] 60 "ii:']
a 45 \ 8 10
E 'N E
l 30 \ I
1 Tc = 25''C
15 Single Pulse
o 25 50 75 100 125 150 175 0.1 1 10 100 1000
Tc - Ambient Temperature (°C) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1 Duty Cycle = 0.5
tte - 0.1 -
g g ___L 0.05
m o = 0.02
E fE ,
k' Single Pulse
lo-A 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Document Number: 71703 www.vishay.com
S-04889-Rev. A, 15-Oct-01 5
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