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SUM110N04-02L
N-Channel 40-V (D-S) 200C MOSFET
VISHAY
SUM110N04-02L
New Product
Vishay Siliconix
N-Channel 40-V (D-S) 200°C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q) ID (A)
0.0023 @ l/ss = 10 v
40 110 a
00033 @ l/ss = 4.5 v
T0-263
TopMew
SUM110N04-02L
N-Channel MOSFET
FEATURES
. TrenchFETo Power MOSFET
. 200°C Junction Temperature
. New Package with Low Thermal Resistance
APPLICATIONS
. Automotive
- 12-V EPS
- Motor Drives
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDs 40
Gate-Source Voltage VGS i 20 V
Tc = 25°C 1103
Continuous Drain Current (To = 175°C) ID
TC = 125°C 110a A
Pulsed Drain Current IBM 440
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Tc = 25"C 437.5c
Maximum Power Dissipationb PD W
TA = 25°C 3.75
Operating Junction and Storage Temperature Range T J, Tstg -55 to 200 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mountd RthJA 40
Junction-to-Case (Drain) Rthcc 0.4
a. Package limited.
b. Duty cycle 2 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 70763 www.vishay.com
S-04970-Rev. B, 29-Oct-01
SUM110N04-02L VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 pA 40 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 0A 1 3
Gate-Body Leakage less VDS = O V, VGS = cl: 20 V 100 nA
VDS=40V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS Vos = 40 V, VGs = 0 M TJ = 125°C 50
VDS=4OV,VGS=0V,TJ=200°C 10 mA
On-State Drain Currenta loam) VDS 2 5 V, VGS = 10 V 120 A
N/ss = 10 V, ID = 30 A 0.00185 0.0023
VGS = 4.5 V, b = 20 A 0.0031 0.0038
Drain-Source On-State Resistancea rDS(on) Q
VGS=10V,ID=30A,TJ=125°C 0.0037
VGS=10V, ID=30A,TJ=200°C 0.0046
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 7300
Output Capacitance Coss Ves = 0 V, Vos = 25 V, f= 1 MHz 1380 pF
Reverse Transfer Capacitance Crss 930
Total Gate Chargec Qg 165 250
Gate-Source Chargec Qgs Vos = 30 V, VGS = 10 v, ID = 110 A 25 nC
Gate-Drain Chargec di 55
Turn-On Delay Time0 td(on) 30 45
Rise Timec tr VDD = 30 V, RL = 0.27 Q 80 120 ns
Turn-Off Delay TimeC two In E 110 A, VGEN = 10 V, Re = 2.5 Q 155 230
Fall Timec tf 120 180
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 110
Pulsed Current ISM 240
Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.1 1.5 V
Reverse Recovery Time trr 60 90 ns
Peak Reverse Recovery Current IRWREC) Ir: = 85 A, di/dt = 100 Alps 2.6 4 A
Reverse Recovery Charge Qrr 0.08 0.15 11C
a. Pulsetest; pulse width 5 300 MS. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
Document Number: 70763
S-04970-Rev, B, 29-Oct-01
VISHAY SUM110N04-02L
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 _ 250
VGS = 10 thru 5 v
200 200
Ci" iii..".
g 150 g 150
Q Q /)(j
D 100 4 V A Q 100 I
f f Tc = 125°C ff
50 50 _ I
25°C /
\ -55''C
3 v 4X _
O 2 4 6 8 IO 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
300 I 1 0.004 _ I
Tc = -551
L,...--- V63 = 4.5 v w,,,,,,,-"''''''''
250 I l ...-----'''"''
A w,,-''''' 25°C E 0.003 _.........----"'"''
tf 200 we"'' s.,,,-,,.,,,,,,-)----'''''" 'k'
F, r.,---'''''''' 125°C E v = 10 v
- tn GS
8 o,,.-'''" ----'- (D
TV 150 l o,.---'''"''" ttt 0.002
g I ---"'" é
So, / we"'"''' o
E 100 / I
F " "ii,'
:9 / il" 0.001
CD 50 =
0 0.000
0 20 40 60 80 100 120 0 20 4O 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
12000 20
10000 l Vos = 30 v
E 16 - ID = 110A "
“g 8000 ss =3
ID > 12
tliz', b' "
'ti 6000 US)
ct.i,r l g 8
1 4000 if' "
Q trs, Coss I /
2000 ' 8
'hs-C"""'----- >
0 8 16 24 32 4O 0 60 120 180 240 300
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 70763
www.vishay.com
S-0497(r-Rev. B, 29-Oct-01
SUM110N04-02L
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 30 A ',,,w'''
A 1.6 ,/
tr ,,,,w'''' A
8 ',,,w''''' 5
g 6 1.2 / g
(L) tD " ‘C
8 (4 '.,e'''' (3 10
5 E " 8
C) i', 0.8 / E
-50 -25 0 25 50 75 100 125 150 175 200 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (°C) Vsro - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 60
ID = 10 mA
100 55
W (A) @ TA = 25 '
cis. I', -,,,,,,----"''''""
ii 10 I A @T -150oc "iii' 50 m..---''''''''"
- Av( ) A- 7 //
1 45 //
0.1 40
0.00001 00001 0001 (h01 0.1 1 -50 -25 0 25 50 75 100 125 150 175 200
tin (Sec) T J - Junction Temperature (°C)
www.vishay.com DocumentNumber: 70763
4 S-04970-Rev, B, 29-Oct-01
VISHAY SUM110N04-02L
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
120 1000
ii.:.". 80 ii:.]
E E Limited
g g by rDS(on)
8 60 8 10
I 40 I
1 TC = 25CC
20 Single Pulse
O 25 50 75 100 125 150 175 200 0.1 1 10 100
TC - Ambient Temperature CC) I/tos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle - 0.5
ii' 'l' 0.2
o -, 0.1
t .1 2s,
'd g 0 = 0.05
Is' g = 0.02
2 Single Pulse
IO-A 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
DocumentNumber: 70763 www.vishay.com
S-0497(r-Rev. B, 29-Oct-01 5
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