SUD50P04-15 ,P-Channel 40-V (D-S) 175C MOSFET FaxBack 408-970-5600S-00830—Rev. A, 24-Apr-00 1SUD50P04-15New ProductVishay Siliconix
SUD50P04-15
P-Channel 40-V (D-S) 175C MOSFET
VISHAY
SUD50PO4-15
New Product
Vishay Siliconix
P-Channel 40-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.015@VGs=-10V -50
0.023 @ VGS = -A.5 v -45
TO-252
Top View
Order Number:
SUD50P04-15
Drain Connected to Tab
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage 1/ros -40
Gate-Source Voltage VGS $20
TC = 25°C -50
Continuous Drain Currentb ID
Tc = 100°C -40
Pulsed Drain Current IBM -150
Continuous Source Current (Diode Conduction) ls -50
TC = 25°C 100b
Maximum Power Dissipationb PD W
TA = 25'C 3a
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 ”C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec. 15 18
Maximum Junction-to-Ambient" RNA
Steady State 40 5O °CIW
Maximum Junction-to-Case RthJC 1.2 1.5
a. Surface Mounted on I" x I" FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71176
S-00830-Rev. A, 24-Apr-00
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SUD50PO4-15
VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 MA -40
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 “A -1.0
Gate-Body Leakage less Vos = 0 V, VGS = 120 V i 100 nA
VDs=-40V,VGs=0V -1
Zero Gate Voltage Drain Current loss WA
Vros=-40 V,VGS=OV.TJ= 125°C -50
On-State Drain Currenta loom) N/os = -5 V, VGS = -1 0 V -120 A
VGS = -10 V, ID = -30 A 0.012 0.015
Drain-Source On-State Resistancea rDS(on) VGS = -10 V, ID = -30 A, TJ = 125°C 0.024 Q
VGS = -4.5 V, b = -20 A 0.018 0.023
Forward Transconductancea gfs VDS = -15 V, ID = -30 A 20 S
Dynamic"
Input Capacitance Ciss 5400
Output Capacitance Coss VGS = 0 V, VDs = -25 V, f= 1 MHz 640 pF
Reverse Transfer Capacitance Crss 300
Total Gate Chargec Q9 85 130
Gate-Source Chargec Qgs VDs = -20 V, VGS = -10 V, ID = -50 A 25 nC
Gate-Drain Chargec di 15
Turn-On Delay Timec tam”) 15 25
Rise Times tr VDD = -20 V, RL = 0.4 Q 380 580 ns
Turn-Off Delay Tlmec tum“) b E -50 A, VGEN = -10 V, Rs = 2.5 Q 75 115
Fall Timec if 140 210
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM -150
Diode Forward Voltagea VSD IF = -50 A, VGs = O V -1.2 -1.5
Source-Drain Reverse Recovery Time trr IF = -50 A, dildt = 100 Alps 40 80 ns
a. Pulse test; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71176
2 S-00830-Rev. A, 24-Apr-00
VISHAY
New Product
SUD50PO4-15
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
250 I I
V = 10, 9, 8 V
GS I 6 V
200 -'''""
Cd.'. (//5w''''" irt
8 5 v 8
_ 4V - -
2, 3 V
0 2 4 6 8 10
Vos - Drain-to-Source Voltage(V)
Transconductance
80 I I
Tc = -551 _----.
o-''''' 25°C
60 t A
G" 125°C Cl
"g" /" t;
dy. C,,,--''" g
ii 40 // T'
iiz's 6
[, 20 o5
0 20 40 60 80 100
ID - Drain Current (A)
Capacitance
A 6000 \ Ciss g
Ll-, g
iii' fi,'
T', 4000 c?)
O 2000 I
Ns,, Coss co
Crss\ y
0 5 10 15 20 25 30
V03 - Drain-to-Source Voltage (V)
Transfer Characteristics
100 I I /
Tc = -55"C
25°C "
60 125°C -
20 /j,(/
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
0 02 --,,,,,---'""
a-..--
VGS = 10 V
0 20 40 60 80 100 120
ID - Drain Current (A)
Gate Charge
v =20V o,,w''''
- lrs=50A /
0 40 80 120 160
% - Total Gate Charge (nC)
Document Number: 71176
S-00830-Rev. A, 24-Apr-00
www.vishay.com . FaxBack 408-970-5600
SUD50PO4-15
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5 I I 100
VGS = 10 V
ID = 30 A
V ',.w'''''' Cd.]
8 " E T J = 150°C
E 1:T 1 5 ' 9
Ea' g ""'" t
8 E u.) 10
II. g "-''' e
C O 1 0 8
o g, . w
I w,--"'' I
5 we'''' U)
g 0.5 -
-50 -25 0 25 50 75 100 125 150 175 o 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature Safe Operating Area
60 500
50 "N, 100
iii] 40 "ss, Ci:]
E 'ss, E
'- " IO
5 30 N. 8
Eo N E
I 20 \ I
E \ E 1
O 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature CC)
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
Si Ie Pulse
10-4 10-3 1o-2
[,---d
l, Duty Cycle, D = T1
2. Per Unit Base = RmJA = 40°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
IO-l 1 10 30
Square Wave Pulse Duration (sec)
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Document Number: 71176
S-00830-Rev. A, 24-Apr-00
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