SUD50N03-11 ,N-Channel 30-V (D-S) 175C MOSFETSUD50N03-11New ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUD50N03-11
N-Channel 30-V (D-S) 175C MOSFET
SUD50N03-11
VISHAY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 17500 MOSFET
PRODUCT SUMMARY tNri,t ““19
o stN (5)
VDs(V) rosmnnsz) Iowa n6 oGss",'
(h011@VGs=10V 50 l . 6‘ m
30 ',vioss"' © (9‘5
0.017 @ VGS = 4.5 v 43 sgtt bos
q It «9‘
T0-252
Drain Connected to Tab
Top View
Order Number: s
SUD50N03-11
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V93 30
Gate-Source Voltage N/ss ck 20
To = 25°C 50
Continuous Drain Current (T J = 175°C)b ID
TC = 100°C 37
Pulsed Drain Current IBM 100
Continuous Source Current (Diode Conduction)a ls 50
To = 25°C 62.5c
Maximum Power Dissipation PD W
TA = 25°C 7.5b
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 17 20
Junction-to-Ambientb RthJA
Steady State 50 60 °CIW
Junction-to-Case Rthoc 2 2.4
Junction-to-Lead RmJL 4 4.8 °CNV
a. Package Limited.
b. Surface Mounted on I" x1" FR4 Board! S 10 sec.
c. See SOA curve for voltage derating.
DocumentNumber: 71187
S-01329-Rev. B, 12-Jun-00
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SUD50N03 11 VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = O V, ID = 250 “A 30
Gate Threshold Voltage VGS(th) VDs = VGS, ID = 250 WA 0.8
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDS=24V,VGS=0V 1
Zero Gate Voltage Drain Current lioss uA
VDS=24V,VGS=O\/,TJ=125°C 50
On-State Drain Currentb loam) VDS = 5 V, VGS = 5 V 50 A
VGS = 10 V, ID = 25 A 0.009 0.011
Drain-Source On-State Resistanceb rDS(on) VGS = 5 V, ID = 20 A, TJ = 125''C 0.018 Q
VGs=4-5 V, b-- 15A 0.014 0.017
Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 10 S
Dynamica
Input Capacitance Ciss 1130
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 400 pF
Reverse Transfer Capacitance Crss 175
Total Gate Chargec Q9 12 20
Gate-Source Chargec Qgs VDs = 15 V, VGS = 5 V, ID = 50 A 4 n0
Gate-Drain Chargec di 4.5
Turn-On Delay Timec tum) 8 12
Rise Times tr VDD =15 V, RL = 0.3 Q 10 15 ns
Turn-Off Delay nmec tam) '0 - 50 A, VGEN = 10 V, Rs = 2.5 Q 18 30
Fall TimeC tf 6 9
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Continuous Current Is 50
Pulsed Current ISM 80
Diode Forward Voltageb VSD IF = 100 A, I/ss = 0 V 1.5 V
Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 Alps 30 50 ns
a. Guaranteed by design, not subject to production testing,
b. Pulsetest; pulse width s 300 us, duty cycle s: 2%.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71187
2 S-01329-Rev. B, 12-Jun-00
SUD50N03-11
New Product Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
200 100
Vss=10thru8V I I
I TC = -55''C
160 80 f
A A (fs, 25''C
1.a..t s I I
if 120 iff 60 sf 125°C -
I' 80 g 40
_ 4O - 20
0 2 4 6 8 10 0 1 2 3 4 5 6
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
60 I 0.04
Tc = -55'C s.,,,,.---'''''''''" o
50 25 C -
A -.--lr.,c,-, a 0.03
m / 125°C
ir; 4O 7;
8 w,,.,,.--''''''" o...----"'"'''" 8
2 s...--"''"' S
8 -..--"" "2
f? 30 r 8 0.02 VGS = 4.5 V "
8 5 s...,--"''
g 20 C) ------"'
I: F, N/ss = 10 V
j, J-) 0 01
WI IO 9
0 20 4O 60 80 100 0 20 40 60 80 100
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
2000 10
v = 15 v ",,P''''
1600 S 8 - IDDS 50A
A :6 /''"
J2. Ciss I-; /
8 1200 __, i', 6
o5. 'g' /''"
o. (g s/
8 800 "N, E 4 /
(I) "ss. Cass 8
"'""----.., I
400 Crss ----- 8 2
m-..-, >
0 5 10 15 20 25 30 0 4 8 12 16 20
Vros - Drain-to-Source Voltage(V) Qg - Total Gate Charge (nC)
Document Number: 71187 www.vishay.com . FaxBack 408-970-5600
S-01329-Rev. B, 12-Jun-00
SUD50N03-11
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0 I I I
VGS = 10 V
19 = 25 A "-"'
A 1.6 //
E ',,,e''" a" T J = 150°C
C A u.)
55 I:', 1.2 /l t
.‘L‘ N 3
8 5 " 3
“F g / e
c o / 3
o ?.5... 0.8 r (2
Je / I
5 0.4 -
-50 -25 0 25 50 75 100 125 150 175 o 0.3 0.6 0.9 1.2 1.5
T J - Junction Temperature CC) V3.3 - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature Safe Operating Area
60 500
Limited
by stmn)
50 ‘\ 100 I
a:" "s. a"
T: 40 "s L’
g "ss, “E 10
e, 30 <3
E 'ss, .5
I 20 . I
TC = 25°C
10 Single Pulse
O 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C)
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Thermal Impedance
0.0'5 I
\Single Pulse
Normalized Effective Transient
104 1o-3 10-2
1O-1 1 IO 30
Square Wave Pulse Duration (sec)
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DocumentNumber: 71187
S-01329-Rev. B, 12-Jun-00
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