SUD50N03-10AP ,N-Channel 30-V (D-S) 175C MOSFET FaxBack 408-970-5600S-99628—Rev. A, 10-Jan-002-1SUD50N03-10APNew ProductVishay Siliconix
SUD50N03-10AP
N-Channel 30-V (D-S) 175C MOSFET
VISHAY
SUD50N03-10AP
New Product
Vishay Siliconix
N-Channel 30-V (D-S), 175°C, MOSFET PWM Optimized
o gsN (5)
PRODUCT SUMMARY 16 “69‘“
l lo' ,
V(BR)DSS (V) rDS(on) (Q) ID (AP ',vioss"' omng‘s
0.010@VGS= 10V 20 1tel ‘50
30 «9‘
0.014@VGS= 4.5V 18 eo
TO-252
Drain Connected to Tab
Top tfew
Order Number: s
SUD50N03-10AP
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS i 20
TA = 25''C 20
Continuous Drain Current (TJ = 175°C)El ID
TA = 100°C 14
Pulsed Drain Current IBM 100
Continuous Source Current (Diode Conduction)a ls 20
To = 25°C 71b
Maximum Power Dissipation PD W
TA = 25°C 8.38
Operating Junction and Storage Temperature Range To, Tsta -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 15 18
Maximum Junction-to-Ambient" RthJA
Steady State 40 50 °C/W
Maximum Junction-to-Case Steady State Rthoc 1.75 2.1
Notes:
a. Surface mounted on 1"x1"FR4 Board, t s 10 sec.
b. See SOA curve for voltage derating.
DocumentNumber: 71134
S-99628-Rev. A, 10-Jan-00
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SUD50NO3-10AP
Vishay Siliconix
New Product
VISHAY
MOSFET SPECIFICATIONS IT,, =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 30
Gate Threshold Voltage Vegan) Vos = VGs, IDS = 250 pA 1 2 V
Gate-Body Leakage less VDS = 0 V, VGS = $20 V i 100 nA
fs-- 30V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDs = 30 V, VGS = O V, T: = 125°C 50 "
Ws-- 30V,VGs=0V,TJ=175''C 150
On-State Drain Current3 low“) Vros = 5 V, VGS = 10 V 50 A
VGS = 10 V, ID = 15 A 0.0075 0.010
Drain-Source On-State Resistancea ms(on) VGS = 10 V, ID = 15 A, T: = 12500 0.016 Q
VGS=1OV,ID= 15A,TJ=175°C 0.019
VGS=4.5V, b-- 15A 0.011 0.014
Forward Transconductancea gfs VDS = 15 V, ID = 15 A 20 S
Dynamicb
Input Capacitance Ciss 2710 6000
Output Capacitance Coss VGS = O V, VDS = 25 V, f= 1 MHz 500 pF
Reversen Transfer Capacitance Crss 250
Total Gate Chargec Q9 55 100
Gate-Source Chargec Qgs Vros = 15 V, VGS = 10 V, ID = 20A 10 nC
Gate-Drain ChargeC di 9
Turn-On Delay TimeC tam") 16 30
Rise Time0 tr VDD = 15 V, RL = 0.3 Q 90 135 ns
Turn-Off Delay Tume° td(on) ID 2 20 A, VGEN = 10 V, Rs = 2.5 Q 33 60
Fall Timec 1f 20 40
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 20
Pulsed Current ISM 100 A
Forward Voltage" VsD IF = 100 A, VGS = 0 V 1.2 1.5 V
Reverse Recovery Time trr IF = 20 A, dildt = 100 Alps 55 100 ns
Notes:
a. Pulse test; pulse width 3 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
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Document Number: 71134
S-99628-Rev. A, IO-Jan-OO
VISHAY
SUD50N03-10AP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
V = 10 thru 6 V
160 ?' GS
'id:''] / 5V Ct
E 120 l E
E 80 4 V - E
- 40 -
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
Transconductance
Tc = -551
iii. w'''''" 25 C ii;
fi. 60 I --" l';
o 125°C 8
[i' 40 / ‘7 O
1- tr" E"
m 20 f
0 10 20 30 40 50
ID - Drain Current (A)
Capacitance
4000 (i?
3‘ N, Ciss g
8 3000 i;
o 2000 is.
1000 \ I
"ss Coss 8
"mm.,....-, >
O CISS
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Tc = 125°C
25°C /
\: /'/ -55''C
0 J I I
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.015 VGS = 4.5 v
0.010 VGS=10V -
0 20 40 60 80 100
ID - Drain Current (A)
Gate Charge
Vos = 15 v
8 - ID = 50A
4 ow'''''''"
0 10 20 30 40 50
% - Total Gate Charge (nC)
DocumentNumber: 71134
S-99628-Rev. A, 10-Jan-00
www.vishay.com . FaxBack 408-970-5600
SUD50NO3-10AP
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS=10V
ID=50A s,,,,,,,-''''
TJ =150°c
rDS(0n) — On—ReSIstance (S2)
(Normallzed)
Is — Source Current (A)
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
T J - Junction Temperature(°C) Vso - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Ambient Temperature Safe Operating Area
25 1000
Limited
by rDS(on)
20 100
15 s. 10
| D — Drain Current (A)
I D — Dram Current (A)
5 N 0.1 TA=25°C
Single Pulse
O 25 50 75 100 125 150 175 0.1 1 10 100
TA - Case Temperature (°C) VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
_.Li _
l. Duty Cycle, D = T
2. Per Unit Base = RNA = 40°C/W
Normalized Efiective Transient
Thermal Impedance
. 3. To, - TA = PDMZmJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
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b4 S-99628-Rev. A, 10-Jan-00
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