SUD50N02-06 ,N-Channel Enhancement-Mode MOSFETS-01665—Rev. B, 31-Jul-002-1SUD50N02-06New ProductVishay Siliconix
SUD50N02-06
N-Channel Enhancement-Mode MOSFET
VISHAY
SUD50N02-06
New Product
Vishay Siliconix
N-Channel 20-V (D-S), 175°C MOSFET
PRODUCT SUMMARY sggt,/
VDs(V) rosmmg) Iowa! b 609 tsoo sf
(11“ 1t1'it) Q?”
0.006 @ VGs = 4.5 V 30 5
20 gsss0' “
0.009 @ VGS = 2.5 v 25 “a ste etfil OS?e
't 'est'''
TO-252
Drain Connected to Tab
Top View
Order Number: s
SUD50N02-06
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 20
Gate-Source Voltage VGs cl: 12
TA = 25°C 30
Continuous Drain Current' b ID
TA = 100°C 21
Pulsed Drain Current IBM 100
Continuous Source Current (Diode Conduction)' b ls 30
To = 25°C 100
Maximum Power Dissipation PD W
TA = 25°C 8.3a, b
Operating Junction and Storage Temperature Range To, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec. 15 18
Maximum Junction-to-Ambient" RthJA
Steady State 40 50 "C/W
Maximum Junction-to-Case Rch 1.2 1.5
a. Surface Mounted on I" x I" FR4 Board
b. t s 10 sec.
Document Number: 71136 www.vishay.com
S-01665-Rev. B, 31-Jul-00
SUD50N02 06 VISHAY
Vishay Siliconix New Product
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = O V, ID = 250 “A 20
Gate Threshold Voltage VGS(th) VDs = Kss, ID = 250 WA 0.6
Gate-Body Leakage less Vos = 0 V, VGS = i 12 V i 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current lioss uA
VDS=20V,VGS=O\/,TJ=125°C 50
On-State Drain Currentb loam) Vos = 5 V, VGS = 4.5 V 50 A
VGS = 4.5 V, ID = 30 A 0.006
Drain-Source On-State Resistanceb rDS(0n) VGS = 4.5 V, ID =30 A, To = 125°C 0.009 Q
VGS = 2.5 V, b = 20 A 0.009
Forward Transconductanceb gfs VDS = 5 V, ID = 30 A 20 S
Dynamica
Input Capacitance Ciss 6600
Output Capacitance Coss VGS = 0 V, VDS = 20 V, f= 1 MHz 1150 pF
Reverse Transfer Capacitance Crss 600
Total Gate Chargec Q9 65 130
Gate-Source Chargec Qgs Vos = 10 V, VGs = 4.5 V, ID = 50 A 13 n0
Gate-Drain Chargec di 14
Turn-On Delay Timec tum) 25 40
Rise Times tr VDD = 10 V, RL = 0.2 Q 120 180 ns
Turn-Off Delay Tlmec tam '0 - 50 A, VGEN = 4.5 V, R6 = 2.5 Q 80 120
Fall Timec tf 100 150
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 100
Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5
Source-Drain Reverse Recovery Time trr IF = 50 A, di/dt = 100 Alps 45 100 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width S 300 us, duty cycle s: 2%.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71136
2-2 S-01665-Rev. B, 31-Jul-00
VISHAY
New Product
SUD50N02-06
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250 I 120 f
VGS=4.5.4V 3.5V / /
200 / 100 / /
'Ci.':.". f C-': 80 l
E 150 g
5 8 60
"d 2.5 v I'-,'-,
'5 100 5
til l 1 40
T = 125°C
20 25°C /
1 v \ 1 5 v y -55''C
0 I I 0 opt., I
0 2 4 6 8 10 0.5 1.0 1.5 2.0 2.5 3.0
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
160 l 0.010
Tc = -551 /
120 'Jr'''"' 25 C a 0008 - VGS = 2.5V
'tri' f s-''''"" o -----""
8 . oii',. m..,.,,-----"'
g 125 C .3 0.006 v 4.51/ -
- GS = .
(s,' 80 C,,---''''''''''--- g?
So, I 0.004
I 40 <3
CY) F 0.002
0 20 4O 60 80 100 20 4O 60 80 100
b - Drain Current (A) b - Drain Current (A)
Capacitance Gate Charge
10000 12
A Vos = 10 v
8000 i,y ID = 50 A o,,w'''''
C' Ciss g) 9 pr
8 6000 w
15 f?, 6 ’
o. f S?
8 4000 g ww''"
2000 y Coss 8 "
0 4 8 12 16 20 0 30 60 90 120 150
VDS - Drain-to-Source Voltage(V) Qg - Total Gate Charge (nC)
Document Number: 71136 www.vishay.com
S-01665-Rev. B, 31-Jul-00
SUD50N02-06
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
Kas-- 4.5V
ID: 30A
Tu = 150°C
rDS(0n) — On—ReSIstance (S2)
(Normalized)
Is — Source Current (A)
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
T J - Junction Temperature(°C) Vso - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Ambient Temperature Safe Operating Area
40 1000
Limited
by rDS(on)
32 1 00
8 N, 0.1 TA=25°C
Single Pulse
| D — Dram Current (A)
I D — Dram Current (A)
O 25 50 75 100 125 150 175 0.1 1 10 100
TA - Case Temperature (°C) VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Notes:
_.Li _
l. Duty Cycle, D = T
2. Per Unit Base = RNA = 40°C/W
Normalized Efiective Transient
Thermal Impedance
. 3. To, - TA = PDMZmJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71136
b4 S-01665-Rev. B, 31-Jul-00
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