SUD45P03-15A ,P-Channel 30-V (D-S) 150C MOSFET FaxBack 408-970-5600S-00045—Rev. A, 24-Jan-002-1SUD45P03-15ANew ProductVishay Siliconix ..
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SUD45P03-15A
P-Channel 30-V (D-S) 150C MOSFET
VISHAY
SUD45P03-15A
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY tN,
VDs (V) PoS(on) (C2) ID (A)a or, 965
0.015@VGs=-101/ -15 It \h
-30 ",etee
0.024@VGs=-4.5V -12 tto
TO-252
C) G _
Drain Connected to Tab
Top View
Order Number: D
SUD45P03-15A
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos -30
Gate-Source Voltage VGS i 20
TA = 25°C -1 5
Continuous Drain Current (TJ = 150°C)b ID
TA = 100°C -10
Pulsed Drain Current km -100
Continuous Source Current (Diode Conduction)a ls -1 5
Tc = 25''C 70C
Maximum Power Dissipation PD W
TA = 25°C 7b
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 14 18
Junction-to-Ambientb RthJA
Steady State 40 50 °CIW
Junction-to-Case Rthoc 1.5 1.8
a. Surface Mounted on I" x I" FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71123
S-00045-Rev. A, 24-Jan-00
www.vishay.com . FaxBack 408-970-5600
SUD45P03 15A VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 MA -30
Gate Threshold Voltage VGS(th) VDs = VGS, ID = -250 “A -1.0
Gate-Body Leakage less VDS = 0 V, VGS = -20 V -100 nA
VDS = -30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current loss WA
VDs = -30 V, VGS = 0 V, Ts = 125°C -50
Vos = -5 V, VGS = -1 0 V -50
On-State Drain Currentb 'D(on) A
Vros = -5 V, VGS = -A.5 V -20
VGs---10V, lro=-15A 0.012 0.015
Drain-Source On-State Resistanceb roam) VGS = -10 V, ID = -1 5 A, T: = 125°C 0.018 0.026 Q
VGS = -A.5 V, ID = -12 A 0.020 0.024
Forward Transconductanceb Ws VDS = -15 V, ID = -1 5 A 20 S
Dynamic"
Input Capacitance Ciss 3600
Output Capacitance Coss VGs = 0 V, VDs = -25 V, f= 1 MHz 600 pF
Reverse Transfer Capacitance Crss 340
Total Gate Chargec Q9 60 125
Gate-Source Chargec Qgs VDS = -15 V, VGS = -1 0 V, ID = -45 A 14 n0
Gate-Drain Chargec di 12
Turn-On Delay Timec td(on) 13 20
Rise Timer) t, VDD = -15 V, RL = 0.33 Q 370 520 ns
Turn-Off Delay Timec two '0 E -45 A, VGEN = -10 V, Rs = 2.4 Q 50 100
Fall TImeC tf 75 120
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 100
Diode Forward Voltageb VSD IF = -45 A, VGs = 0 V 1.2 1.5
Source-Drain Reverse Recovery Time trr IF = -A5 A, di/dt = 100 Alps 55 100 ns
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width s 300 us, duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71123
2-2 S-00045-Rev. A, 24-Jan-00
VISHAY
SUD45P03-15A
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I D — Drain Current (A)
9 f5 — Tra nsconducta nce (S)
C — Capacitance (pF)
Output Characteristics
100 I l
/ Vss=10thru6N/
we'''""" 5 V
40 4 v -
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
50 . I
TC = -55oC
we"''" 25°C
40 I -
/V''''"''"'""cc-- 125°C
20 ft,'
0 10 20 30 40 50 60
ID - Drain Current (A)
Capacitance
4000 \\ ciss
2000 '
(s, Coss
'ss....]''''"""
M--...,
0 5 10 15 20 25 30
VDs - Drain-to-Source Voltage(V)
| D — Drain Current (A)
rDS(on)— On-Resistance ( Q )
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
100 I l t
Tc---55l /
80 I /
60 / 125°C -
0 1 2 3 4 5 6
I/tss - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current
V = 4.5 V
003 GS
VGS=10V
0 20 40 60 80 100
ID - Drain Current(A)
Gate Charge
VDS=15V
8 - b--45A
0 IO 20 30 4O 50 60
0g - Total Gate Charge (nC)
Document Number: 71123
S-00045-Rev. A, 24-Jan-00
www.vishay.com . FaxBack 408-970-5600
SUD45P03-15A
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 15 A
A 1.6 r/
V // R" T J = 150°C
g A " c
(u T7 1.2 g
.1rd 'll / Q
g a / 3 10
a; g """ L'
c o / Q
o E 0 8 o
L "se''' w
S.. (D
S 0.4 -
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature Safe Operating Area
20 1000
a? Ct.".
it' 12 "ss, E, 10
(i, a "ss j-j, 1
'il "N, r?
o 'N, 9
0 0.01
0 25 50 75 100 125 150 O 1 1 10 100
TA - Ambient Temperature CC) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
To,' g
t E 0.1
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71123
b4 S-00045-Rev. A, 24-Jan-00
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