SUD45N05-20L ,N-Channel Enhancement-Mode Trans, Logic Level FaxBack 408-970-5600S-57247—Rev. E, 23-Mar-982-1SUD45N05-20LVishay Siliconix
SUD45N05-20L
N-Channel Enhancement-Mode Trans, Logic Level
SUD45N05-20L
Vishay Siliconix
VISHAY
N-Channel 50-V (D-S), 175°C MOSFET, Logic Level
PRODUCT SUMMARY
VDs (V) rosmn) (Q) ID (A)a c, witi5'siir,
50 0.018 © VGS = 10 v d: 30 A1 60 $sliG'itii's,
0.020 @ Vss = 4.5 v $30
TO-252
l El G OJ
Drain Connected to Tab
Top View
Order Number: S
SUD45N05-20L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 50
Gate-Source Voltage VGS 3:20
TC = 25°C i 30
Continuous Drain Currenta ID
Tc = 100°C i 30
Pulsed Drain Current IDM i 100 A
Continuous Source Current (Diode Conduction)a Is 43
Avalanche Current IAR 37
Repetitive Avalanche Energy (Duty Cycle 5 1%) L = 0.1 mH EAR 93 mJ
I I I . TC = 25°C 75
Maximum Power Dissipation PD W
TA = 25°C 2.5a
Operating Junction and Storage Temperature Range TJ, Tsig -55 to 175 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Free Air, FR4 Board Mount 60
Maximum Junction-to-Ambient Rth0A
Free Air, Vertical Mount 110 "C/W
Maximum Junction-to-Case Rmoc 2.0
a. Package limited.
b. Surface Mounted on FR4 Board, t s 10 sec.
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Document Number: 70271 www.vishay.com . FaxBack 408-970-5600
S-57247-Reu E, 23-Mar-98 2-1
SUD45N05-20L
. . . . VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = 0 V, ID = 250 “A 50 V
Gate Threshold Voltage VGS(th) VDs = Kss, ID = 250 WA 1.0 2.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDs=50V,VGs=0V 1
Zero Gate Voltage Drain Current Iross VDs = 50 V, VGS = 0 V, To = 125°C 50 WA
VDS=5ov,vGS=0\/,TJ=175°C 150
On-State Drain Currentb 'D(on) Vos = 5 V, VGS = 10 V 43 A
VGs=10V,lD=20A 0.018
Drain-Source On-State Resistanceb rosmn) VGS = 10 V, b = 20 A, T: = 125°C 0.036 Q
VGs=10V.ID=43A.TJ=125°C 0.040
VGS = 4.5 V, ID = 43 A 0.020
Forward Transconductanceb gfs VDS = 15 V, ID = 43 A 20 S
Dynamica
Input Capacitance Ciss 1800 3600
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 370 pF
Reverse Transfer Capacitance Crss 130
Total Gate ChargeC Q9 43 60
Gate-Source ChargeC Qgs Vos = 25 V, N/ss = 10 V, b = 43 A 7 n0
Gate-Drain Chargec di 10
Turn-On Delay Timec tam) 10 20
Rise Timec tr VDD = 25 V, RL = 0.6 g 10 20 ns
Turn-Off Delay Time0 td(off) ID - 43 A, VGEN = 10 V, Rs = 2.5 Q 32 60
Fall Timec t, 7 15
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 43
Diode Forward Voltageb VSD IF = 43 A, VGS = 0 V 1.5
Source-Drain Reverse Recovery Time trr IF = 43 A, dildt = 100 Alps 49 100 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width S 300 us, duty cycle s: 2%.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70271
2-2 S-57247-Rev. E, 23-Mar-98
VISHAY
SUD45N05-20L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
100 " I I
ff'' veg: 10, 9, 8, 7,6V
80 5 VI
<3 'ft'
E 60 r
Cy 4 v
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
Transconductance
Tc = - 5''C
8 /p'''"'' 25°C
g 40 I 125 C -
0 10 20 30 40 50 60
ID - Drain Current (A)
Capacitance
[li-s 2000
ID 1500
I 1000
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
I D — Drain Current
rDS(on) — On-Resistance (
Ves — Gate-to-Source Voltage (V)
Transfer Characteristics
10 TC = -125l
f 's 25°C
l -55''C
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
(h02 - VGS = 4.5 V
_---..
VGS = 10 V
0 20 40 60
ID - Drain Current (A)
Gate Charge
8 VDS = 25 V
- ID = 43 A pr
6 ,,,,//''
4 ,__I/
0 10 20 30 40 50
Q9 - Total Gate Charge (nC)
Document Number: 70271
S-57247-Reu E, 23-Mar-98
www.vishay.com . FaxBack 408-970-5600
SUD45N05-20L
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.25 100
- VGS = 10 V
2.00 ID = 20 A
Cl 1.75 " A
8 1.50 / Fi
f1i. "ii," , g
g-,' M 1.25 / a
dl E 8 10
t 2 1.00 g
L 0.75 ,4/ I
:90 0.50
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature CC) VSD - Source-to-Drain Voltage(V)
THERMAL RATINGS
Maximum Drain Current vs. CaseTemperature Safe Operating Area
50 200
A A Limited
S .e,-f: 10 by r 100 us
E 30 C
a ''hhsss, 5 1 ms
s 20 I'
til , , 10 ms
cu o 1
- - 00 ms
10 1 s
o 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature CC) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
'ii,', , 0 1
10-4 1tr3 10-2 IO-l 1 10 30
Square Wave Pulse Duration (sec)
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