SUD40N03-18P ,N-Channel 30-V (D-S) MOSFETSUD40N03-18PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUD40N03-18P
N-Channel 30-V (D-S) MOSFET
SUD40N03-18P
VISHAY
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 17500 MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (AP
0.018@Vss=10V i40
0.027 @ VGS = 4.5 v ck 34
TO-252
Drain Connected to Tab
Top View
Order Number:
SUD40N03-18P
CO .0 .‘ere (5)
ttf,,c2ofti/ “fig
“313‘“ “G osee‘s
'tlt,?,,,'); w
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ck 20
Tc = 25°C i40
Continuous Drain Current (TJ = 175°C)b ID
To = 100°C i 28
Pulsed Drain Current IDM i 100
Continuous Source Current (Diode Conduction)" ls 40
Tc = 25°C 62.5c
Maximum Power Dissipation PD W
TA = 25°C 7.5b
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 17 20
Junction-to-Ambient RNA
Steady State 50 60 °C/W
Junction-to-Case Rmoc 2 2.4
Junction-to-Lead RthJL 4 4.8 "CA/ll
a. Package Limited.
b. Surface Mounted on I" x1" FR4 Board! S 10 sec.
c. See SOA curve for voltage derating.
Document Number: 71086
S-63636-Reu A, 08-Nov-99
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SUD40NO3 18P VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = O V, ID = 250 11A 30
Gate Threshold Voltage VGS(th) VDs = VGS, ID = 250 WA 1.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDS=24V,VGS=0V 1
Zero Gate Voltage Drain Current lioss uA
VDs=24V,VGs=O\/,TJ=125°C 50
On-State Drain Currentb loam) VDS = 5 V, VGS = 10 V 40 A
N/Gs=10V,lo--20A 0.014 0.018
Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 20 A, To = 125°C 0.029 Q
VGS=4.5 V, b-- 10A 0.021 0.027
Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 10 S
Dynamica
Input Capacitance Ciss 1300
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 340 pF
Reverse Transfer Capacitance Crss 95
Total Gate Chargec Q9 19 30
Gate-Source Chargec Qgs Vos = 15 V, N/ss = 10 V, ID = 40 A 5 n0
Gate-Drain Chargec di 3
Turn-On Delay Timec tum) 8 12
Rise Times tr VDD =15 V, RL = 0.37 Q 8.5 13 ns
Turn-Off Delay Tlmec tam) In E 40 A, VGEN = 10 V, Rs = 2.5 Q 17 25
Fall TimeC tf 6 9
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Continuous Current Is 40
Pulsed Current ISM 80
Diode Forward Voltageb VSD IF = 100 A, I/ss = 0 V 1.5 V
Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 Alps 30 50 ns
a. Guaranteed by design, not subject to production testing,
b. Pulse test; pulse width s 300 us, duty cycle s: 2%.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71086
2-2 S-63636-Rev. A, 08-Nov-99
SUD40N03-18P
New Product Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
160 160
I l l l l
Vss=10thru8V 6V Tc=-55°C /
120 120 ‘<
A A 25°C
1.a..t pp''''" 6 V s / I
if iff / 125°C
's 80 's 80
.g 5 V .E
fl 40 4 V - fl 40
2, 3 V
0 2 4 6 8 10 0 2 4 6 8 10
Vros - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
60 I I 0.06
TC = -55'C n,,........,,,,......,,,----)-----"
50 --'''" 25°C - 0.05
a s,,,,,,,"-''''''"'' w........,.-?:::::::--" Cl
ir; 40 _...----""'" ei.''..?......-.. Z 0.04
ot,. (z-l''',,','.",:.''.''.",,",,],-.---------'-'-" é VGS = 4.5 V
ii 30 -,--'''" i'-,' 0.03
[?s, 'Y'''' 5 VGS = 10 v
g 20 F, 0 02 m.--''''""
WI IO 9 0.01
0 20 40 60 80 100 120 0 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
1800 20
1500 VDS = 15 V
S 16 - ID = 40 A
J2. 1200 g
8 i', 12
o5. g /
g 900 53 o,,,/''
I 600 g'' /"
0 5 10 15 20 25 30 0 10 20 3O 40
Vros - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71086 www.vishay.com . FaxBack 408-970-5600
S-63636-Reu A, 08-Nov-99 2-3
SUD40N03-18P
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
VGS = 10 V ',,,,pw''''''
ID = 40 A
A 1.6 w''''''
Ci ',w''''' a" T J = 175°C
8 ',,,-''" "iii"
c A / u.)
55 8 1.2 / t
1’ u CI
8 5 " 3
“F g ---"'' e
c o / 3
o ?.5... 0.8 (2
Je s,,,,-'''" I
5 0.4 -
-50 -25 0 25 50 75 100 125 150 175 o 0.3 0.6 0.9 1.2 1.5
T J - Junction Temperature CC) V3.3 - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature Safe Operating Area
50 500
40 100 10, 100 11s
by rDS(on)
Ci:] "s, Ci':]
E 30 \ E,
E "s, 's 10
E 20 'N. 5
I 'N I
CI 'N 9 1
10 TC = 25°C
Single Pulse
O 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C)
Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
_|_ 0.05'
\Single Pulse
Normalized Effective Transient
Thermal Impedance
104 1o-3 10-2
1O-1 1 IO 30
Square Wave Pulse Duration (sec)
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Document Number: 71086
S-63636-Rev. A, 08-Nov-99
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