SUD35N05-26L ,N-Channel 55-V (D-S) 175C MOSFET S-03485—Rev. A,16-Apr-011SUD35N05-26LNew ProductVishay Siliconix ..
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SUD40N03-18P ,N-Channel 30-V (D-S) MOSFETSUD40N03-18PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUD35N05-26L
N-Channel 55-V (D-S) 175C MOSFET
VISHAY
SUD35N05-26L
New Product
Vishay Siliconix
N-Channel 55-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (AP
0.020@VGs=10V 35
55 0.026 © l/ss = 4.5 v 30
TO-252
Drain Connected to Tab
TopVew
Order Number:
SUD35N05-26L
FEATURES
q TrenchFETo Power MOSFETS
q 175°C Rated Maximum Junction Temperature
q Low Input Capacitance
APPLICATIONS
q Automotive Fuel Injection Systems
q Automotive Wipers
q Automotive Door Modules
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V93 55
Gate-Source Voltage VGS $20
Tc = 25°C 35
Continuous Drain Current (T: = 175°C)b ID
Tc = 100°C 25
Pulsed Drain Current IBM 80
Continuous Source Current (Diode Conduction)" ls 35
TC = 25''C 506
Maximum Power Dissipation PD W
TA = 25°C 7.5b
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 17 20
J cti -t -A be ' R
un lon o m I n Steady State WA 50 60
Junction-to-Case Rthuc 2.5 3.0
Junction-to-Lead RthJL 5.0 6.0
a. Package Limited.
b. Surface Mounted on I" x1" FR4 Board,t s 10 sec.
c. See SOA curve for voltage derating.
Document Number: 71443 www.vishaycom
S-03485-Rev. A,16-Apr-01
SUD35N05-26L VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 55
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 LA 1
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V ch 100 nA
VDs=44V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=44V.VGS=0V,TJ=125°C 50
On-State Drain Currentb lD(on) VDS = 5 V, VGS = 5 V 35 A
VGS = 10 V, b = 20 A 0.0165 0.020
Drain-Source On-State Resistanceb rDs(on) VGs = 10 V, lo = 20 A, TJ = 125°C 0.035 Q
VGs=4-5 V, lo-- 15A 00215 0.026
Forward Transconductanceb gfs VDS = 15 V, ID = 20 A 25 S
Dynamica
Input Capacitance Ciss 885
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 185 pF
Reverse Transfer Capacitance Crss 80
Total Gate Charges Qg 10.5 13
Gate-Source Chargec Qgs VDS = 25 V, VGS = 5 V, ID = 35 A 4 n0
Gate-Drain Chargec di 4.8
Turn-On Delay Timec tum") 5 8
Rise Timec tr VDD = 25 V, RL = 0.3 Q 18 30 ns
Turn-Off Delay TimeC timgt) ID _ 35 A, VGEN = 10 V, Re = 2.5 Q 20 30
Fall Timec If 100 150
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Continuous Current ls 35
Pulsed Current ISM 8O
Diode Forward Voltageb VSD IF = 80 A, VGS = 0 V 1.5 V
Source-Drain Reverse Recovery Time trr IF = 35 A, di/dt = 100 Alps 25 40 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
c. Independent of operating temperature.
www.vishay.com Document Number: 71443
2 S-03485-Reu. A,16-Apr-01
VISHAY
SUD35N05-26L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| D — Drain Current
g fs—Transconductance (S)
C — Capacitance (pF)
Output Characteristics
VGS =10thru 6 v
2 v 3 v
O 2 4 6 8 IO
VDS - Drain-to-Source Voltage (V)
Transconductance
Tc = -55''C
p''''""'' 25''C 2
p'''''" 125°C
V""'''"""""
0 20 40 60 80 100
ID - Drain Current (A)
Capacitance
VDS - Drain-to-Source Voltage (V)
| D — Drain Current (A)
I’DS(on)— On-Resistance ( Q )
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
l l I f
TC = -55''C
j/ l 25°C
60 y 125°C
0 1 2 3 4 5 6 7 8
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGs = 4.5v// ",,,,,,W/
VGS = 10 V
0 02 o........-"" L---'''''''
_.,..-,----"''''''
0 20 40 60 80 100
ID - Drain Current (A)
Gate Charge
VDS=25V
16 - ko=35A
0 10 20 30 40
% - Total Gate Charge (nC)
Document Number: 71443
S-03485-Rev. A,16-Apr-01
wwwvishay.com
SUD35N05-26L
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0 I _ I " 100
VGS = 10 V w''''
ID = 20 A
A 1.6 w''''
V 5..t.t
g Irs,'' 1.2 ",,,w'''' E3 T J = 175°C
ii' % 'w'" <3
u; E / g 10
r: o ' :1
o E 0.8 I JI
' w,.,-'''''' I
(l? 0.4 -
-50 -25 0 25 5O 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature Safe Operating Area
40 500
Limited
-ss by rDS(on)
30 "s,
ig" "ss, li.]
a 'l-l 10
5 20 8
I 's, I
- 10 - 1
TC = 25°C
Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C)
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
ii' g 0.2
.32? 0.1
'if',' g
T7 0.02
E 0.05
E "s, I I I
2 Single Pulse
10-4 10-3 1o-2 IO-I 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71443
S-03485-Reu. A,16-Apr-01
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