SUD30N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic Level FaxBack 408-970-5600S-56917—Rev. C, 23-Mar-982-1SUD30N04-10Vishay Siliconix
SUD30N04-10
N-Channel 40-V (D-S) 175C MOSFET, Logic Level
VISHAY
SUD30N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
V(BR)Dss (V) rDS(on) (C2) ID (A)
40 0.010@VGs= 10 v 30a
0.014@Vss=4.5V 30a
TO-252
Top View
Order Number:
SUD30N04-1 0
Drain Connected to Tab
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDs 40 V
Gate-Source Voltage N/ss cl: 20
Continuous Drain Current (TJ = 175°C) TC = 2500 ID MP
Tc = 100°C 30a
Pulsed Drain Current IBM 120 A
Avalanche Current IAR 50
Repetitive Avalanche Energyb L = 0.1 mH EAR 125 mJ
Power Dissipation Tc = 25°C PD 97c W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
PCB Mount) 45 55
Junction-to-Ambient RNA
Free Air 110 125 ''C/IN
Junction-to-Case RthJc 1.5 1.8
Notes:
a. Package limited.
b Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d Surface mounted on 1" FR4 board.
Document Number: 70782
S-56917-Rev, C, 23-Mar-98
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SUD30N04-10
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, b = 250 WA 40
Gate Threshold Voltage Vegan) VDS = VGS, IDS = 250 pLA 1 3
Gate-Body Leakage less VDs = 0 V, VGS = $20 V i 100 nA
VDs=40V,VGs=0V 1
Zero Gate Voltage Drain Current 'Dss VDS = 40 V, VGS = 0 V, TJ = 125°C 50 11A
Vos-- 40V,VGS=0V,TJ=175°C 150
On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 30 A 0.085 0.010
VGS=10V, lro=30A,To=1250C 0.014 0.017
V . Kas-- 10 V, II): 30A, TJ =175°C 0.0185 0.022
Drain-Source On-State Resistance" rDs(on) Q
VGS=4.5\/, ID= 10A 0.0115 0.014
VGS=4.5 V, ID: 10 A, TJ =125°C 0.0195 0.024
VGS = 4.5 V, ID = 10 A, Tu =175°C 0.025 0.031
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 57 S
Dynamicb
Input Capacitance Ciss 2700
Output Capacitance Coss VGS = O V, VDS = 25 V, f= 1 MHz 600 pF
Reversen Transfer Capacitance Crss 160
Total Gate Chargec Q9 50 100
Gate-Source Charge" Qgs VDS = 15 V, VGS = 10 V, ID = 30 A 9 nC
Gate-Drain ChargeC di 11
Turn-On Delay Timec tam") 14 30
Rise TimeC tr VDD = 15 V, RL = 0.5 Q 13 30 ns
Turn-Off Delay Tlmec tum“) ID = 30 A, VGEN = 10 V, Rs = 2.5 Q 45 90
Fall Timec If 25 50
Source-Drain Ciode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 30
Pulsed Current ISM 120
Forward Voltage" VSD IF = 30 A, Vss = 0 V 0.90 1.50 V
Reverse Recovery Time trr IF = 30 A, dildt = 100 Alps 50 100 ns
Notes:
a. Pulse test; pulse width 3 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature,
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2-2 S-56917-Rev. C, 23-Mar-98
VISHAY
SUD30N04-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
.r,'si. 60
So, 40
8 2400
8 1600
Output Characteristics
VGS=10,9,8,7,6V
0 2 4 6 8
Vos - Drain-to-Source Voltage(V)
Transconductance
w.-----"""""-,
w...---""""" 125°C
25°C -
0 30 6O 90
VGS - Gate-to-Source Voltage (V)
Capacitance
1 "SSS,,,,,,, Cass
Crss a''---...-,
0 8 16 24 32
Vos - Drain-to-Source Voltage(V)
l D — Drain Current (A)
I’DS(on) — On-Resistance( £2 )
VGs — Gate-to-Source Voltage(V)
Transfer Characteristics
30 TC=125°C
I 'ss, -55l
o 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
O 20 40 60 80 100
ID - Drain Current(A)
Gate Charge
VGS=15V
8- b=30A
4 s,,,,,/''''"
0 1 0 20 3O 4O 50
Qg - Total Gate Charge (nC)
Document Number: 70782
S-56917-Rev, C, 23-Mar-98
www.vishay.com . FaxBack 408-970-5600
SUD30N04-10
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
2 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
.5 100
VGS= 10V
ID = 30 A
TJ =150°C
rDS(on — On-ReSIstance( 9)
(Normalized)
| S — Source Current (A)
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature(°C) VSD - Source-to-Drain Voltage(V)
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
40 200
Safe Operating Area
100 10,us
.100 ms
| D — Drain Current (A)
| D — Drain Current (A)
0 25 50 75 100 125 150 175 0.1 1 10 50
TA - Ambient Temperature CC) VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
il)', cs, 0.1
10-5 10-4 10-3 10-2 IO-I 1 3
Square Wave Pulse Duration (sec)
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b4 S-56917-Rev. C, 23-Mar-98
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