SUD25N06-45L ,N-Channel Enhancement-Mode MOSFETs, Logic Level FaxBack 408-970-5600S-57253—Rev. E, 24-Feb-982-1SUD25N06-45LVishay Siliconix
SUD25N06-45L
N-Channel Enhancement-Mode MOSFETs, Logic Level
VISHAY
SUD25N06-45L
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET, Logic Level
PRODUCT SUMMARY 'W. ewe
VDs (V) rosmn) (Q) ID (A) 606 iiko (5)
0.035 @ VGS = 10 v 25 A1 ssN sso' s
60 1“ It
0.045 @ veg = 4.5 v 22 tNs'' git? e
T0-252
l Drain Connected to Tab
Top View
Order Number:
SUD25N06-45L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 60 V
Gate-Source Voltage VGs d: 20
Tc = 25°C 25
Continuous Drain Current (TJ = 175°C) ID
To = 100°C 16
Pulsed Drain Current IDM 30 A
Continuous Source Current (Diode Conduction) Is 25
Avalanche Current IAR 25
Repetitive Avalanche Energy (Duty Cycle s 1%) L = 0.1 mH EAR 31 mJ
TC = 25°C 50
Maximum Power Dissipation PD W
TA = 25°C 2.5a
Operating Junction and Storage Temperature Range Ts Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RNA 60
Maximum Junction-to-Case Rmoc 3.0
Notes:
a. Surface mounted on I" x I" FR4 Board.
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Document Number: 70274
S-57253-Reu E, 24-Feb-98
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SUD25N06-45L
Vishay Siliconix
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SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 “A 60 V
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 HA 1.0 3.0
Gate-Body Leakage less Vos = 0 V, VGS = $20 V ck 100 nA
bbs--60V,b1ss--0V 1
Zero Gate Voltage Drain Current Irsss VDS = 60 V, VGS = 0 V, TJ = 125°C 50 WA
VDS=60V,VGS=OV,TJ=175°C 150
On-State Drain Currentb loam) VDS = 5 V, VGS = 10V 20 A
VGS = 10 V, ID = 12 A 0.025 0.035
Drain-Source On-State Resistanceb rDS(on) l/ss = 10 V, ID = 12 A, Tu = 12500 0.045 0.063 Q
VGS=1OV,|D= 12A,TJ=175°C 0.058 0.081
N/ss = 4.5 v, ID = 12 A 0.036 0.045
Forward Transconductanceb gts VDS = 15 V, ID = 12 A 15 25 S
Dynamic
Input Capacitance Ciss 1320
Output Capacitance Coss VGs = 0 V, Vos = 25 V, f= 1 MHz 210 pF
Reverse Transfer Capacitance Crss 56
Total Gate Chargec Q9 26 40
Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 25 A 7.5 nC
Gate-Drain ChargeC di 4.5
Turn-On Delay Timec ttmon) 10 20
Rise TimeC tr VDD = 30 V, RL = 1.2 Q 10 20 ns
Turn-Off Delay Tlmec tum '0 E 25 A, VGEN = 10 v, Rs = 7.5 Q 31 45
Fall Timec If 10 20
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)a
Pulsed Current ISM 30 A
Diode Forward Voltage VSD IF = 25 A, VGS = O V 1.5
Reverse Recovery Time trr 60 90 ns
1F = 25 A, di/dt = 100 Alps
Reverse Recovery Charge Qrr 0.13 110
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width s 300 ps, duty cycle 3 2%.
c. Independent of operating temperature.
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2-2 S-57253-Rev. E, 24-Feb-98
VISHAY SUD25N06 45L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
3O l 30
Kas-- 5, 6, 7, 8, 9, 10V
Cd.'. g.]
E 18 E 18
93 tl?
5 4 V 5
g 12 - g 12
I I - 0
© 0 Tc - 125 c
- 6 - 6
1, 2, 3 V
O l I 0
0 2 4 6 8 10 0 1
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
50 l 0100
TC = -551
40 I A
A CI 0.075
2 w"''" 25°C V
8 "i'' I 8
g 30 1 E
g /'t" 125°C E 0 0 0
g / C,,,,,,-'''], ie, . 5 VGS = 4.5 V
So, 20 f 4 a _---
g o VGS = 10 v
c pf,',,',',',',')' I
I E" 0.025
ll) Sb
m 10 ''''' g
0 6 12 18 24 30 0 6 12 18 24 30
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
1800 10 p"
1500 Vos = 30 v /
jjjf. 8 - ID = 25 A
A Ciss g, /"
'ty.. 1200 g /
o ID 6
'ti 900 ' /
ii- io, 4 I"
O (b y
I 600 tis"
300 ' o
Crss ""---,......._, >
0 10 20 30 40 50 60 0 6 12 18 24 30
V03 - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
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S-57253-Reu E, 24-Feb-98
SUD25N06-45L
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5 I I 100
VGS = 10 V
ID = 12 A
V w,,,,,,,,,,,,,,"'''''''" s.
o5. 8 1.5 // g
.1: LY '.,.-''' 0
Q g S IO
g il. 1.0 08)
5, o.,,,-'''''''' cn
b' 0.5
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 os 1.2 1.5
T J - Junction TemperatureCC) VSD - Source-to-Drain Voltage(V)
THERMAL RATINGS
Drain Current vs. Case Temperature Safe Operating Area
100 us
Limited
A ""s,. A 10
tst) 18 "ss. tt,
o "ss, o 1 ms
a "s, IT,
a 12 a
I "N I 1
E E I 110 ms
I Yoo ms
6 dc, 1 s
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature CC) Vrss - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
t"ttfz'o.1-,f,
Lug 0.1
IO-l 1
Square Wave Pulse Duration (sec)
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Document Number: 70274
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