SUD25N04-25 ,N-Channel Enhancement-Mode MOSFETS-04558—Rev. B, 27-Aug-01 2-1SUD25N04-25Vishay Siliconix ..
SUD25N06-45L ,N-Channel Enhancement-Mode MOSFETs, Logic Level FaxBack 408-970-5600S-57253—Rev. E, 24-Feb-982-1SUD25N06-45LVishay Siliconix
SUD25N04-25
N-Channel Enhancement-Mode MOSFET
VISHAY
SUD25N04-25
Vishay Siliconix
N-Channel 40-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.025@VGs= ION/ 25
40 0.040 @ VGS = 4.5 V 20
TO-252
Drain Connected to Tab
TopMew
Order Number:
SUD25N04-25
-trssis'' si/tie/fe''"' 5
't It,) et ttt
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros 40
Gate-Source Voltage VGS i 20
Tc = 25°C 25
Continuous Drain Current (TJ = 175"C)b ID
Tc = 125''C 15
Pulsed Drain Current IBM 50 A
Continuous Source Current (Diode Conduction)b Is 50
Avalanche Current IAR 25
Repetitive Avalanche Energy (Duty Cycle s 1%) L = 0.1 mH EAR 31 mJ
Tc = 25°C 33b
Maximum Power Dissipation PD W
TA = 25°C 3b
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 20 25
Junction-to-Ambient' RmJA
Steady State 40 50 oc/w
Junction-to-Case RthJC 3.7 4.5
a. Surface Mounted on I" x1" FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71129 www.vishay.com
S-04558-Rev. B, 27-Aug-01
SUD25N04-25 “3%
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 40
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 LA 1.0 2.0 3.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V ch 100 nA
VDs=40V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDS = 40 V, VGS = 0 V, T: = 125°C 50 WA
VDs=40V,VGs=0V,Tv=175t'C 150
On-State Drain Currentb IBM) Vros = 5 V, VGs = 10 V 50 A
VGS = 10 V, ID = 25 A 0.02 0.025
VGs=10\/,ID=25A,TJ=125°C 0.040
Drain-Source On-State Resistanceb rDs(on) Q
VGS=1OV,ID=25A,TJ=17SOC 0.053
VGs = 4.5 V, b = 10 A 0.031 0.040
Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 15 S
Dynamica
Input Capacitance Ciss 510
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 125 pF
Reverse Transfer Capacitance Crss 65
Total Gate Charges Q9 13 20
Gate-Source Chargec Qgs VDs = 20 V, Vss = 10 V, ID = 25 A 2.5 n0
Gate-Drain Chargec di 3
Turn-On Delay Time0 tum”) 5 10
Rise Time tr VDD = 20 V, RL = 0.8 Q 47 70 ns
Turn-Off Delay TimeC timgt) ID _ 25 A, VGEN = 10 V, Re = 2.5 Q 15 30
Fall Timec If 5 10
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 50
Diode Forward Voltageb VSD IF = 25 A, VGS = O V 1.1 1.3
Source-Drain Reverse Recovery Time trr IF = 25 A, di/dt = 100 Afys 17 30 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com Document Number: 71129
2-2 S-04558-Reu. B, 27-Aug-01
VISHAY
SUD25N04-25
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 10 V
80 9 V
Cai' Ci.:.]
E 60 E
s 40 S
- 20 -
O 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
Tc = -55''C
20 f A
‘3 v/s''''''''' 25°C 3
g 15 7 §
g 125°C Ef
E 10 8
c, 5 a
0 10 20 30 40
ID - Drain Current (A)
Capacitance
C — Capacitance (pF)
VGs — Gate-to-Source Voltage (V)
O 8 16 24 32 4O
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
so I l
Tc---55l
25°C \1/7
30 f J
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0 10 20 30 40 50
ID - Drain Current(A)
Gate Charge
VDS = 20 V ww'''''''
16 - ID = 25 A f
8 o,,,,w''''"
0 5 10 15 20 25
% - Total Gate Charge (nC)
Document Number: 71129
S-04558-Rev. B, 27-Aug-01
www.vishay.com
SUD25N04-25
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4 I _ I 100
VGS = 10 V
ID = 25 A I
Cl s,,,,,,,,,,-'"''" A
8 1.6 I ii" Tu = 175°C
g a " 2
"a' “,3 's
'5 = of o
m w 1.2 - a, 10
u; E / F?
0 Z " o
L 0.8 ,1 I
3 w,--'''''' w
-50 -25 0 25 50 75 100 125 150 175 O 0.3 0.6 0.9 1.2
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
30 100
- Limited b r
24 "s, y DS(on)
a "ss a? 10
E 18 "ss. E
(i, 12 "ss. (i,
I 'ts . 1
o N, 9
6 Tc = 25''C
Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C) Vros - Drain-tty-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
A- T',
Single Pulse
Nomalized Effective Transient
Thermal Impedance
10-4 1o-3 1o-2
Square Wave Pulse Duration (sec)
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DocumentNumber: 71129
S-04558-Reu. B, 27-Aug-01
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