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SUD15N15-95
N-Channel 150-V (D-S) 175C MOSFET
VISHAY
SUD15N15-95
New Product
Vishay Siliconix
N-Channel 150-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
FEATURES
. TrenchFET© Power MOSFETS
. 175°C Junction Temperature
VDs (V) rDS(on) (Q) ID (A)
O.095@VGS=1OV 15
150 0.100@VGs=6V 15
TO-252
Drain Connected to Tab
TopMew
Order Number:
SUD15N15-95
APPLICATIONS
. Primary Side Switch
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150
Gate-Source Voltage VGS $20
Tc = 25''C 15
Continuous Drain Current (T: = 175°C)b ID
Tc = 125°C 8.7
Pulsed Drain Current IBM 25 A
Continuous Source Current (Diode Conduction) ls 15
Avalanche Current IAR 15
Repetitive Avalanche Energy (Duty Cycle 5 1%) L = 0.1 mH EAR 112 mJ
Tc = 25''C 62b
Maximum Power Dissipation PD W
TA = 25°C 2.7a
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 16 20
J ti -t -A bi ta R
unc lon o m en Steady State thJA 45 55 “CNV
Junction-to-Case RthJc 2 2.4
a. Surface Mounted on I" x1" FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71641 www.vishay.com
S-04094-Rev. A, 25-Jun-01
SUD15N15-95 “3%
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 14A 150
Gate Threshold Voltage VGSW Vos = l/ss, ID = 250 LA 2
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V ch 100 nA
VDs=120V,Vss=0V 1
Zero Gate Voltage Drain Current loss VDS = 120 V, VGS = 0 V, To = 125°C 50 WA
VDS=120V,VGS=0V,TJ=175°C 250
On-State Drain Currentb IBM) Vros = 5 V, VGs = 10 V 25 A
VGS = 10 V, ID = 15 A 0.077 0.095
VGS=10V,ID=15A,TJ=125°C 0.190
Drain-Source On-State Resistanceb rDs(on) Q
VGS=1OV,ID=15A,TJ=17SOC 0.250
VGS=6V,|D=1OA 0.081 0.100
Forward Transconductanceb gfs VDS = 15 V, ID = 15 A 25 S
Dynamica
Input Capacitance Ciss 900
Output Capacitance Coss V68 = 0 V, VDS = 25 V, f= 1 MHz 115 pF
Reverse Transfer Capacitance Crss 70
Total Gate Charges Q9 20 25
Gate-Source Chargec Qgs VDs = 75 V, Vss = 10 V, ID = 15 A 5.5 nC
Gate-Drain Chargec di 7
Turn-On Delay Time0 tum”) 8 12
Rise Timec tr VDD = 75 V, RL = 5 g 35 55 ns
Turn-Off Delay TimeC timgt) ID _ 15 A, VGEN = 10 V, Re = 2.5 Q 17 25
Fall Timec If 30 45
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 25
Diode Forward Voltageb VSD IF = 15 A, VGS = O V 0.9 1.5
Source-Drain Reverse Recovery Time trr IF = 15 A, di/dt = 100 Afys 55 85 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
C. Independent of operating temperature.
www.vishay.com Document Number: 71641
2 S-04094-Rev. A, 25-Jun-01
VISHAY
SUD15N15-95
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
, VGS=10thru6V
Cai' Ci.:.]
Tz,' 15 "t'
tz 5 V t:
s 10 S
3 V N 4 v
O 2 4 6 8 IO
VDS - Drain-to-Source Voltage (V)
Transconductance
Tc = -55''C
- 25°C A
:3 /''''' 1 3
o l C2
g 24 ( 125°C - g
g /,(,C1''','C,,'.i', E
c w--""'''" k'!
8 l / é
m 16 C)
tts ,,,w'''" A
'T (jp'''' C
c, 8 a
0 5 10 15 20 25
ID - Drain Current (A)
Capacitance
1200 E
V Ciss 6
8 900 i',
8 600 (i-';
300 Crss 8
xf Coss >
"tmm-..-,
0 1 =F=lrtl=mrq
0 20 4O 60 80 100
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
TC = 125°C
5 25°C v]
Li. -55oC
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.10 /
VGS = 6 V w,,,,,,,.,,,---'''"
0.08 s,.....---""
_..-..----""
VGS = 10 V
0 5 10 15 20 25
ID - Drain Current (A)
Gate Charge
VDS = 75 V
16 - ID = 15 l
0 8 16 24 32 40
% - Total Gate Charge (nC)
Document Number: 71641
S-04094-Rev. A, 25-Jun-01
www.vishay.com
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.8 I _ I 100
VGS = 10 V
2.4 - ID = 15 A //
V 2.0 iiit"
r: A u.)
I-'; E 1 6 / g
a "r-T, 'pt''" Q 10
o: E 8
E: 6 1.2 's
o g JI
' "'"' I
3 0.8 ,4 w
(l? ",w-''''" -
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
Ts - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
20 100
as a? 10
E "ss, E
g "s, g
5 10 "s, 8
I "s, 1 1
e 5 _ 9
Tc = 25''C
Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100 1000
TC - Case Temperature (°C) Vros - Drain-tty-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
_ 0.02
Thermal Impedance
Single Pulse
Nomalized Effective Transient
10-4 Io-:, 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71641
4 S-04094-Rev. A, 25-Jun-01
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