SUD10P06-280L ,P-Channel 60-V (D-S), 175 grades C MOSFET, Logic LevelS-20349—Rev. F, 18-Apr-022-1SUD/SUU10P06-280LVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWI ..
SUD10P06-280L ,P-Channel 60-V (D-S), 175 grades C MOSFET, Logic LevelS-20349—Rev. F, 18-Apr-022-3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUD15N06-90L ,N-Channel 60-V (D-S) 175C MOSFET, Logic Level FaxBack 408-970-5600S-49634—Rev. D, 20-Sep-992-1SUD15N06-90LVishay Siliconix
SUD10P06-280L
P-Channel 60-V (D-S), 175 grades C MOSFET, Logic Level
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VISHAY
SUD/SUU10P06-280L
Vishay Siliconix
P-Channel 60-V (D-S), 175°C MOSFET, Logic Level
and DRAIN-TAB
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.170@VGs=-10V -10
0.280@VGs=-4.5V -8
TO-251
TO-252 C)
Drain Connected to Tab
Top bfery G D S
Order Number: Top IAew
SUD10P06-280L
Order Number:
SUU10P06-280L
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS i 20 V
Tc = 25°C -10
Continuous Drain Current (To = 150°C) ID
To = 100°C -7
Pulsed Drain Current IBM -20 A
Continuous Source Current (Diode Conduction) ls -10
Avalanche Current IAR -10
Repetitive Avalanche Energy (Duty Cycle s1%) L = 0.1 mH EAR 5 mJ
TC = 25°C 37
Maximum Power Dissipation PD W
TA = 25°C 2a
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
FR4 Board Mount 60 70
Junction-to-Ambienta . RNA
Free Air 120 140 "C/W
Junction-to-Case Rch 3.7 4.0
a. Surface Mounted on FR4 Board.
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DocumentNumber: 70780
S-20349-Rev. F, 18-Apr-02
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SPECIFICATIONS ITU =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDs = O V, ID = -250 MA -60 V
Gate-Threshold Voltage VGS(m) VDs = Vss, ID = -250 ”A -1.0 -2.0 -3.0
Gate-Body Leakage less Vos = 0 V, VGS = $20 V i 100 nA
VDs=-60VVGs=0V -1
Zero Gate Voltage Drain Current lnss VDs = -60 V, VGs = 0 V, To = 125°C -50 WA
VDs=-60V,VGs=0V,TJ=1750C -150
On-State Drain Currentb 'D(on) VDS = -5 V, VGS = -10 V -1 0 A
N/ss-lol/i-MA 0.130 0.170
VGs=-10V,ID=-5A, To=125''C 0.31
. - - . b
Drain Source On State Resistance roam) VGS = -10 V, ID = -5 A, T: = 175°C 0.375 Q
VGS = -4.5 V b = -2 A 0.210 0.280
Forward Transconductanceb gfs VDs = -1 5 V, ID = -5 A 6 s
Dynamic
Input Capacitance Ciss 635
Output Capacitance Coss VDS = -25 V, VGS = 0 V, f= 1 MHz 100 pF
Reverse Transfer Capacitance Crss 30
Total Gate Charge Qg 11.5 25
Gate-Source Charge Qgs I/rss = -30 V, VGs = -10 V, ID = -10 A 3.5 nC
Gate-Drain Charge di 2
Turn-On Delay Timec td(on) 9 20
Rise Timec tr VDD = -30 V, RL = 3 Q 16 20 ns
Turn-Off Delay Timec tam”) ID = 10 A, VGEN = -10 V, Rs = 2.5 Q 17 30
Fall Timec tr 19 35
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)a
Pulsed Current ISM -20 A
Forward Voltageb N/sn IF = 10 A, VGS = 0 V -1.3 V
Reverse Recovery Time trr IF = 10 A, di/dt = 100 Alps 50 80 ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width s 300 us. duty cycle 5 2%.
C. Independent of operating temperature.
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2-2 S-20349-Rev. F, 18-Apr-02
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VISHAY
SUD/SUU10P06-280L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
| D — Drain Current (A)
9 rs — Transconductance (S)
C — Capacitance (pF)
Output Characteristics
30 _ _ s,,,,,,--""'"
VGS=10thru7V wtC.,-----
24 or,,",)''':,,",,,",,':'--,.,-,
tsat'''"'" 6V
12 p/p''''''''''" C"
6 zt,t 4V
0 2 4 6 8 1O
Vos - Drain-to-Source Voltage (V)
Transconductance
15 TC = -551 -
12 w,.,,,------'"'''','''".",', 25°C a
9 / w,,,--''''''''"
6 1 / -- 125°C -
gf, C,,.-'''''""
3 tft'',',
0 4 8 12 16 20
ID - Drain Current (A)
Capacitance
O 10 20 3O 40 50 60
VDS - Drain-to-Source Voltage (V)
| D — Drain Current (A)
rDS(on) — On-Resistance ( Q )
VGs — Gate-to-Source Voltage(V)
Transfer Characteristics
To = 12500
l "s -55t
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
O 2 4 6 8 10
ID - Drain Current (A)
Gate Charge
Vrss=20 v /
16- ID=10A "
0 4 8 12 16 20 24
Qg - Total Gate Charge (nC)
DocumentNumber: 70780
S-20349-Rev. F, 18-Apr-02
www.vishay.com
SUD/SUU10P06-280L
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 I _ I 100
VGS = 10 V
Ir, = 5 A
_.,,,.,-'''"
To = 150°C
rDS(on — On—ReSIstance ( £2)
(Nonnahzed)
ls — Source Current (A)
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
T J - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Drain Current vs. Case Temperature Sate Operating Area
| D — Dram Current (A)
| D — Dram Current (A)
O 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty ycle = O.
Normalized Effective Transient
Thermal Impedance
IO-a 1ty-3 IO-? IO-I 1 3
Square Wave Pulse Duration (sec)
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2.4 S-20349-Rev. F, 18-Apr-02
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