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SUD06N10-225L
N-Channel 100-V (D-S) 175C MOSFET
SUD06N10-225L
VISHAY
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 175°C MOSFET
PRODUCT SUMMARY aie,t,5'iri"
o© gsN (5)
VDs(V) rosmme) ID(A) 15 “ego“
0.200@VGS=10V 6.5 l . \“ m
100 “313‘“ G ks''''
0.225 @ VGS = 4.5 v 6.0 sgtt bos
q It «9‘
TO-252
Drain Connected to Tab
Top View
Order Number: S
SUD06N10-225L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage VGS i 20
TC = 25°C 6.5
Continuous Drain Current (T: = 175”C)b ID
Tc = 125°C 3.75
Pulsed Drain Current IDM 8.0 A
Continuous Source Current (Diode Conduction) Is 6.5
Avalanche Current IAR 5.0
Repetitive Avalanche Energy (Duty Cycle s 1%) L = 0.1 mH EAR 1.25 m]
To = 25°C 20b
Maximum Power Dissipation Po W
TA = 25°C 1.5a
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 40 50
Junction-to-Ambienta RthJA
Steady State 80 100 °CNV
Junction-to-Case Rthoc 6.0 7.5
a. Surface Mounted on I" x1" FR4 Board.
b. See SOA curve for voltage derating.
DocumentNumber: 71253
S-01584-Rev. A, 17-JuI-00
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SUD06N10 225L VISHAY
Vishay Siliconix New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGs = O V, ID = 250 “A 100
Gate Threshold Voltage VGS(th) VDs = VGS, ID = 250 WA 1.0 3.0
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDS=80V,VGS=0V 1
Zero Gate Voltage Drain Current Iross VDs = 80 V, VGS = 0 V, To = 125°C 50 WA
VDS=80V,VGS=0V,TJ=175°C 250
On-State Drain Currentb 'D(on) Vos = 5 V, VGS = 10 V 8.0 A
Veg: 10 V, ID=3A 0.160 0.200
l/GS-- 10V, ID=3A,TJ= 125°C 0.350
Drain-Source On-State Resistanceb rDS(on) Q
1/Gs=10V,lD=3A,TJ=1750C 0.450
VGS = 4.5 V, ID = 1.0 A 0.180 0.225
Forward Transconductanceb gfs VDS = 15 V, ID = 3 A 8.5 S
Dynamica
Input Capacitance Ciss 240
Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz 42 pF
Reverse Transfer Capacitance Crss 17
Total Gate ChargeC Q9 2.7 4.0
Gate-Source ChargeC Qgs Vos = 50 V, N/ss = 5 V, b = 6.5 A 0.6 nC
Gate-Drain Chargec di 0.7
Turn-On Delay Timec tam) 7 11
Rise Timec tr VDD = 50 V, RL = 7.5 g 8 12 ns
Turn-Off Delay TImeC td(off) ID a 6.5 A, VGEN = 10 V, Rs = 2.5 Q 8 12
Fall Timec tf 9 14
Source-Drain Diode Ratings and Characteristic (Tc = 25°C)
Pulsed Current ISM 8.0
Diode Forward Voltageb VSD IF = 6.5 A, VGS = 0 V 0.9 1.3
Source-Drain Reverse Recovery Time trr IF = 6.5 A, di/dt = 100 Alps 35 60 ns
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width S 300 us, duty cycle s: 2%.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 71253
2 S-01584-Rev. A, 17-Jul-00
VISHAY
SUD06N10-225L
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
ttfee'':
VGs=10thru 5V
I D — Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Transconductance
Tc = -55''C
/ 25°C
(Y''' 125°C
9 f5 — Tra nsconducta nce (S)
0 3 6 9 12
ID - Drain Current (A)
Capacitance
C — Capacitance (pF)
0 20 4O 60 80
Vros - Drain-to-Source Voltage(V)
| D — Drain Current (A)
rDS(on)— On-Resistance( Q )
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
TC = -55''C
25''C 's
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
//' ,/
VGS = 4 5 V //
s.,,,,,,.,,,--"''' 4
-...---"" o,.e'''"
m,.,...---'"'''' VGS = 10 v
0 3 6 9 12 15
ID - Drain Current (A)
Gate Charge
VDS = 50 V o,,,?'
- ID = 6.5 A "
o,,,,,,?'"
sw''''"
0 1 2 3 4 5
Q9 - Total Gate Charge (nC)
DocumentNumber: 71253
S-01584-Rev. A, 17-Jul-00
www.vishay.com . FaxBack 408-970-5600
SUD06N10-225L
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
VGS = 10 V
19 = 3 A
v S...
I' ",,pi'''' E
G' 1.5 A L
I','-',. th' 'ee''" 's
17, = o
a) m "'" u)
n; g e
l ss.?... 1.0 J,'
o5.. - co
3 0.5 -
-50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2
T J - Junction Temperature CC) V3.3 - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature Safe Operating Area
Limited by row
Ci:] tit" 100 [15
ta, 4 "s. ,''c.z,
E \ E 1 ms
D "NSS, D
S 2 s. 9 10 ms
TC = 25°C
Single Pulse
100 ms
0 1 s, dc
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C) VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle - 0.5
E g 0.2
ili,i, 0.1
Single Pulse
10-2 10-1 1
Square Wave Pulse Duration (sec)
10 100
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DocumentNumber: 71253
S-01584-Rev. A, 17-JuI-00
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