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SUB85N10-10-SUP85N10-10
N-Channel 100-V (D-S) 175C MOSFET
VISHAY
SUPlSUB85N10-10
New Product
Vishay Siliconix
N-Channel 100-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
V(BR)Dss (V) rI3S(on) (C2) ID (A)
100 0.0105@VG3=10V 85a
0.012 @ VGS = 4.5 v
TO-220AB
TO-263
DRAIN connected to TAB
Top View
SUB85N10-10
Top View
SUP85N10-10
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage Was l 20 V
To = 25°C 85a
Continuous Drain Current (TJ = 175°C) ID
TC = 125''C 60a A
Pulsed Drain Current IDM 240
Avalanche Current lAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
TC = 25°C (TO-220AB and TO-263) 2500
Maximum Power Dissipationb PD W
TA = 25°C (TO-263)d 3.75
Operating Junction and Storage Temperature Range Ts, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 “CM
Junction-to-Case Rthoc 0.6
a. Package limited.
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on l" square PCB (FR-4 material).
DocumentNumber: 71141
S-00172-Rev. A, 14-Feb-00
www.vishay.com . FaxBack 408-970-5600
SUPlSUB85N10-10
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 pA 100 V
Gate-Threshold Voltage Vegan) VDS = VGS, ID = 250 WA 1 3
Gate-Body Leakage less Vos = 0 V, VGS = cl: 20 V d: 100 nA
VDs=80V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDS = 80 V, VGS = 0 V, TJ = 125°C 50 WA
VDS = 80 V, I/ss = 0 V, To = 175°C 250
On-State Drain Currenta loam) Vos 2 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0085 0.0105
VGS = 4.5 V, lo = 20 A 0.0010 0.012
Drain-Source On-State Resistance" roam) Q
VG5=10V.ID=30A.TJ=125°C 0.017
VGS=10V,|D=3OA,TJ=175°C 0.022
Forward Transconductancea gts Vos = 15 V, ID = 30 A 25 S
Dynamicb
Input Capacitance Ciss 6550
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 665 pF
Reverse Transfer Capacitance Crss 265
Total Gate Chargec Qg 105 160
Gate-Source ChargeC Qgs VDs = 50 V, VGs = 10 V, b = 85 A 17 n0
Gate-Drain Chargec di 23
Turn-On Delay Timec tuom 12 25
Rise Timec t, VDD = 50 V, RL = 0.6 g 90 135 ns
Turn-Off Delay Tlmec tum) lo E 85 A, VGEN = 10 V, Rs = 2.5 Q 55 85
Fall Timec t, 130 195
Source-Drain Diode Ratings and Characteristics (Tc = 25"C)b
Continuous Current Is 85
Pulsed Current ISM 240 A
Forward Voltage" VSD IF = 85 A, VGS = O V 1.0 1.5 V
Reverse Recovery Time trr 85 140 ns
Peak Reverse Recovery Current IRWREC) IF = 50 A, di/dt = 100 Alps 4.5 7 A
Reverse Recovery Charge Qrr 0.17 0.35 wc
a. Pulse test; pulse width 5 300 us. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600
Document Number: 71141
S-00172-Rev. A, 14-Feb-00
VISHAY
New Product
SUPlSUB85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
ID — Drain Current(A)
9 f5 — Transconductance (S)
C — Capacitance (pF)
Output Characteristics
VGS = 10 thru 6 V
200 I’ 5 V
50 4 V
2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
Tc = -55'C
s,,--''''" 25°C
,,t'',',',,", 125°C
/ CV'""
100 /jtj'f''"''''"
20 40 60 80 100
ID - Drain Current (A)
Capacitance
i / Coss
0 15 30 45 60 75
VDS - Drain-to-Source Voltage (V)
In — Drain Current(A)
rDS(on) — On—Resistance ( Q)
Ves — Gate-to-Source Voltage (V)
Transfer Characteristics
-55''C
0 L? I
O 1 2 3 4 5 6
VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current
VGS = 4.5 V /
0.010 VGs=10V -
O 20 40 60 80 100 120
ID - Drain Current (A)
Gate Charge
I/os = 50 v
16- ID=85A /
12 s,/''
0 50 100 1 50 200
% - Total Gate Charge (nC)
DocumentNumber: 71141
S-00172-Rev. A, 14-Feb-00
www.vishay.com . FaxBack 408-970-5600
SUPlSUB85N10-10
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A
a 2.0 //
g 8 "'' 1.5:
i?,' h' 1.5 / 'g TJ=150°c
/ll E " O 10
u: F, " E
O E 1.0 ,/ g
Ti' w,,,,,,-"'''' I
u: w,,,-'''''''' -
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature(°C) VSD - Source-to-Drain Voltage(V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 140
130 - I =250
100 D “A /
IAv(A) @TA=25°C ty r,,,,.,,,,,--'''"'''''"
a g 120 A
V S, //
.8 10 ' w.,,,,,-''''"
|Av(A)@TA=150°C 110 ,1
0.1 90
000001 0.0001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) To - Junction Temperature CC)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71141
b4 S-00172-Rev. A, 14-Feb-00
VISHAY SUPlSUB85N10 10
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 1000
80 "sc
's, 100
cg "s, cg
E 60 g Limited
8 8 10 by r on
t':5 40 5
20 1 Tc = 25°C
Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100 1000
Tc - Ambient Temperature CC) VDs - Drain-to-Source Voltage (V)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = os
T 0.02
Single P'ulse'
10-4 10-3 1o-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71141 www.vishay.com . FaxBack 408-970-5600
S-00172-Rev. A, 14-Feb-00 2-5
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