SUB85N03-04P ,N-Channel 30-V (D-S) 175C MOSFETS-20120—Rev. B, 12-Mar-023C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
SUB85N03-07P ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUB85N03-04P-SUP85N03-04P
N-Channel 30-V (D-S) 175C MOSFET
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VISHAY
SUP/SU
B85N03-04P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175°C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) I'DS(on) (Q) ID (AP
30 0.0043 @ I/ss = 10 v 85a
0.007 @ l/GS = 4.5 v MF
T0-220AB
T0-263
DRAIN connected to TAB H Ll H
TopMew
SUB85NO3-04P
Top 1Aew
SUP85N03-04P
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V03 30
Gate-Source Voltage VGs $20 V
Tc = 25°C 85a
Continuous Drain Current (TJ = 175°C) ID
Tc = 100°C 85a A
Pulsed Drain Current IDM 240
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Tc = 25°C (TO-220AB and TO-263) 166c
Maximum Power Dissipationb TA = 25''C (TO-263)d Pro 3.75 W
Operating Junction and Storage Temperature Range T J, Tsig -55 to 175 0C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)0 40
. - -A . R
Junction to mblent Free Air (TO-220AB) WA 62.5 °CIW
Junction-to-Case Rthuc 0.9
a. Package limited.
b. Duty cycle 2 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 71241 www.vishay.com
S-20120-Rev. B, 12-Mar-02
SUPlSUB85N03-04P VISHAY
Vishay SiliConix New Product
SPECIFICATIONS ITa =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 pA 30 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 0A 1 2
Gate-Body Leakage less VDs = 0 V, Vss = i 20 V i 100 nA
VDS=24V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS Vos = 24 V, VGs = 0 M TJ = 125°C 50 g/k
VDS=24V,VGS=0V,TJ=175°C 250
On-State Drain Currenta loam) VDS 2 5 V, VGS = 10 V 120 A
N/ss = 10 V, ID = 30 A 0.0035 0.0043
VGS=1OV, |D=30A,TJ=125°C 0.0065
. _ - . a
Drain Source On State Resistance rDS(on) VGS = 10 V, ID = 30 A, TJ = 175°C 0.008 Q
VGS = 4.5 V, ID = 20 A 0.0055 0.007
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 4500
Output Capacitance Coss Ves = 0 V, Vos = 25 V, f= 1 MHz 1380 pF
Reverse Transfer Capacitance Crss 615
Total Gate Chargeb Q9 71 90
Gate-Source Charger Qgs VDS = 15 V, VGS = 10 V, ID = 85 A 15 nC
Gate-Drain Chargeb di 16
Turn-On Delay Timeb td(on) 15 23
Rise Time tr VDD=15\L RL=0.18Q 12 18 ns
Turn-Off Delay Timeb two In E 85 A, VGEN = 10 V, Re = 2.5 C2 50 75
Fall Timeb tf 22 35
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)°
Continuous Current ls 85
Pulsed Current ISM 240
Forward Voltagea VSD IF = 85 A, VGS = 0 V 1.1 1.5 V
Reverse Recovery Time trr 42 70 ns
Peak Reverse Recovery Current IRM IF = 85 A, di/dt = 100 AIMS 1.4 2.1 A
Reverse Recovery Charge Qrr 0.03 0.06 11C
a. Pulsetest; pulse width s 300 us, duty cycle s 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71241
2 S-20120-Rev, B, 12-Mar-02
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VISHAY
New Product
SUP/SUB85N03-04P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
250 I I
VGS=1Othru6V l
Ci" iii..".
S 150 g
D 100 4V - ©
O 2 4 6 8 IO
Vos - Drain-to-Source Voltage (V)
Transconductance
180 _ _
Tc = -55''C
A 25°C 91
f.2. l a:
8 120 I -''''" _ g
F, 125°C f5
E 90 // --"''''"" 5
o s,,,,,,,-"'''"'"' O
E 60 I I
:2 (f" g
CD 30 =
0 20 40 60 80 100
ID - Drain Current(A)
Capacitance
GE: 5000 fs'?
,fi, 4000 [-o,
g 3000 g
o 2000 0
1000 >
0 6 12 18 24 30
Vos - Drain-to-Source Voltage (V)
Transfer Characteristics
TC = 125°C
25''C pf
\ -55''C
0 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
V = 4.5 V
0.006 GS --""
s....--'"'''"
0.004 VGS = 10 V -
0 20 40 60 80 100 120
ID - Drain Current (A)
Gate Charge
V = 15 V
16 DS /
- lro=85A "
12 ",,/''
0 20 40 60 80 100 120 140
Qg - Total Gate Charge (nC)
DocumentNumber: 71241
S-2012(r-Rev. B, 12-Mar-02
www.vishay.com
SUP/SUB85N03-O4P
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 30 A
tr / A
g A " E
"a' 8 1.2 " 9
a A " 5 T " 150°C
dl E "-'" y, IO
t a / [u',
E 0.8 o
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (°C) Vsro - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 45
I = 250 A
100 Ct 40 D 11
|AV(A)@TA=25 C '
A 7,; -----"
m m r,,,-''''''
V 9, w,--''''"
i', 10 g 35 4/
E IAv(A) @TA= 150°C ' s,,,,-''"'"
w,,,,-'"'''''''
0.1 25
0.00001 00001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) T J - Junction Temperature (°C)
www.vishay.com DocumentNumber: 71241
4 S-20120-Rev, B, 12-Mar-02
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VISHAY
New Product
SUP/SUB85N03-04P
Vishay Siliconix
THERMAL RATINGS
ii.:.".
st, 60
Normalized Effective Transient
Thermal Impedance
Maximum Avalanche and Drain Current
vs. Case Temperature
ID — Drain Current (A)
O 25 50 75 100 125 150 175
TC - Ambient Temperature CC)
Safe Operating Area
Limited
by rDS(on)
TC = 25CC
Single Pulse
1 10 100
I/tos - Drain-to-Source Voltage(V)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Single Pulse
1o-5 104 10-3 1ch Ity-l
Square Wave Pulse Duration (sec)
DocumentNumber: 71241
S-2012(r-Rev. B, 12-Mar-02
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