SUB85N02-03 ,N-Channel 20-V (D-S) 175C MOSFETS-03181—Rev. A, 05-Mar-011SUP/SUB85N02-03New ProductVishay Siliconix ..
SUB85N03-04P ,N-Channel 30-V (D-S) 175C MOSFETS-20120—Rev. B, 12-Mar-023C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
SUB85N03-07P ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUB85N02-03
N-Channel 20-V (D-S) 175C MOSFET
VISHAY
SUP/SUB85N02-03
New Product
Vishay Siliconix
N-Channel 20-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q) ID (AP
0.003 @ l/ss = 4.5 v 85
20 0.0034 @ VGS = 2.5 V 85
0.0038 @ I/cs = 1.8 v 85
TO-220AB
O TO-263
DRAIN connected to TAB H Ll H
Top Vlew
Top Mew SUB85N02-03
S U P85N 02-03
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 20
Gate-Source Voltage VGS ck 8
Tc = 25°C 85
Continuous Drain Current (To = 175°c)a ID
TC = 100°C 85
Pulsed Drain Current IBM 240
Avalanche Current IAR 30
Repetitive Avalanche Energyb L = 0.1 mH EAR 45 mJ
Power Dissipation" Tc = 25°C PD 250 W
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)c 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 "CAN
Junction-to-Case Rthoc 0.6
Notes:
a. See SOA curve for voltage derating,
b. Duty cycle s 1%.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 71421 www.vishay.com
S-03181-Rev. A, 05-Mar-01
SUP/SUB85N02-03 VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS ITU =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)Dss VGS = O V, ID = 2 mA 20
Gate Threshold Voltage Vegan) Vos = VGs, IDS = 2 mA 0.45
Gate-Body Leakage IGSS Vos = 0 V, VGS = i 8 V i 100 nA
VDS=16V,VGS=0V 1
Zero Gate Voltage Drain Current les 11A
fs-- 16V,Vss--0VTJ--125oC 250
On-State Drain Currenta low”) I/os = 5 V, VGS = 4.5 V 120 A
VGs = 4.5 V, ID = 30 A 0.0025 0.003
VGs = 4.5 V, ID = 30 A, T: = 125°C 0.0042
Drain-Source On-State Resistancea roam) VGs = 4.5 V, ID = 30 A, TJ = 175°C 0.005 g
VGS = 2.5 V, ID = 30 A 0.0027 0.0034
VGs = 1.8 V, ID = 30 A 0.003 0.0038
Forward Transconductancea gfs I/rss = 5 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 21250
Output Capacitance Coss VGS = 0 V, VDS = 20 V, f= 1 MHz 2350 pF
Reversen Transfer Capacitance Crss 1520
Total Gate ChargeC Qg 140 200
Gate-Source ChargeC Q95 VDS = 10 V, VGS = 4.5 V, ID = 85 A 18 nC
Gate-Drain ChargeC di 24
Turn-On Delay Timec {mm 20 30
Rise Timec tr VDD = 10 V, RL = 0.12 Q 200 300 ns
Turn-Off Delay Timec td(off) ID = 85 A, VGEN = 4.5 V, Rs = 2.5 Q 450 670
Fall ‘I'Imec If 320 480
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Pulsed Current ISM 240 A
Forward Voltagea VSD IF = 100 A, VGS = 0 V 1.2 1.5 V
Reverse Recovery Time trr IF = 50 A, di/dt = 100 Alps 75 150 ns
Notes:
a. Pulsetest; pulse width s 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com Document Number: 71421
2 S-03181-Rev, A, 05-Mar-01
VISHAY
SUP/SUB85N02-03
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS = 4.5 thru 2 v
E 1.5 v
I 1, 0.5 V
0 r' "
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
Transconductance
To = -55l
a "----r"
i,; w,,,,,,----'"''''''''''" 25°C
5 300 - (
% /1,...,,,,,,.,,------ 1251
m 200 I
E / -.---
_ ",,,--''''''''''''
a tft,',
m 100 ff /
20 40 60 80 100 120
ID - Drain Current(A)
Capacitance
24000 l Ciss
8 18000
8 12000
Ns. Coss
a.-...,
0 Crss
4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
rDS(0n) — On-Resistance ( 9) I D — Drain Current (A)
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
TC = -55oC /
25''C ‘\ /
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
I/cs = 1.8 V
VGS = 4.5 V A
VGS = 2.5 V -
20 40 60 80 100 120
ID - Drain Current(A)
Gate Charge
VDs=10V
ID=30A /
s,,,,,,?'''''''''"
w,,,w'''''
50 100 150 200 250
09 - Total Gate Charge (nC)
Document Number: 71421
S-03181-Rev. A, 05-Mar-01
www.vishay.com
SUP/SUB85N02-O3
Vishay Siliconix New Product
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
VGS=4-5V
1 5 - ID = 30A w.,-''''
8 A 1.2 E
f,-',. s e - a
T,' g "-'''' 8 Tu-- 150 c
n; E os 8
O ii. / 'd
A 0.6 I
sc,?, m
-50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0
T J - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
Drain-Source Voltage Breakdown
vs. Junction Temperature
30 I _
ID = 2 mA
9 "w'''''''
"if, ""'
a 26 r
E w,,,,,,,,,.-"'
-50 -25 0 25 50 75 100 125 150
Ts - Junction Temperature (°C)
www.vishay.com
Document Number: 71421
4 S-03181-Rev, A, 05-Mar-01
VISHAY SUP/SUB85N02-03
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature Safe Operating Area
100 1000
by r on)
ii.:.". Ct
8 8 10
5 40 l a
O 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Case Temperature (°C) VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
st, 'k'
"if',' g
I?, a 0.1
Single Pulse
0.0001 0.001 0.01 OA 1 10 100
Square Wave Pulse Duration (sec)
Document Number: 71421 www.vishay.com
S-03181-Rev.A, 05-Mar-01 5
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