SUP75P05-08 ,P-Channel 55-V (D-S) 175C MOSFETSUP/SUB75P05-08New ProductVishay SiliconixP-Channel 55-V (D-S), 175C MOSFET
SUB75P05-08-SUP75P05-08
P-Channel 55-V (D-S) 175C MOSFET
SUP/SUB75P05-08
VISHAY
New Product
Vishay Siliconix
P-Channel 55-V (D-S), 175°C MOSFET
PRODUCT SUMMARY o't/
06 B' (5)
V(BR)DSS (V) rDS(on) (Q) ID (A) 1 a “0‘9““
-55 0.008 -75a l . “w w
“W“ “G
T0-220AB sw'
TO-263
f l G _
DRAIN connected to TAB
H Ll H
G D S G D S
. Top View
Top View D
SUP75P05-08 SUB75P05-08 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V03 -55
Gate-Source Voltage VGs $20
Continuous Drain Current TC = 2500 ID -75a
(TJ=175°C) TC: 150°C -47 A
Pulsed Drain Current IBM -240
Avalanche Current IAR -75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Tc = 25°C (TO-220AB and TO-263) 2500
Power Dissipation PD W
TA = 125°C (TO-263)c 3.7
Operating Junction and Storage Temperature Range To, Tsig -55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)c RthJA 40
Junction-to-Ambient
Free Air (TO-220AB) RthJA 62.5 °C/W
Junction-to-Case Rth 0.6
Notes:
a. Package limited.
b. Duty cycle s 1%.
C. When mounted on l" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70891
S-99404-Rev, B, 29-Nov-99
www.vishay.com . FaxBack 408-970-5600
SUP/SUB75P05-O8
Vishay Siliconix
New Product
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 111A -55
Gate Threshold Voltage Vegan) VDs = VGS, ID = -250 0A -1 -2 -3 V
Gate-Body Leakage less VDS = 0 V, VGS = 120 V i 100 nA
VDs=-44V,VGs=0V -1
Zero Gate Voltage Drain Current Iross Vos = -A4 V, VGS = O V, T: = 125°C -50 “A
v03: -A4 v,sz=ov, TJ =175°C -700
On-State Drain Currents low”) Vros = -5 V, VGS = -10 V -120 A
VGS = -10 V, ID = -30 A 0.008
Drain-Source On-State Resistancea rDs(on) VGS = -A.5 V, ID = -20 A 0.013 Q
VGs=-10 V, II): -30A,Tv=1250C 0.014
VGs=-10 V, ko=-30 A,TJ= 175°C 0.016
Forward Transconductancea gfs VDS = -1 5 V, ID = -30 A 75 S
Dynamic"
Input Capacitance Ciss 8500
Output Capacitance Coss VGS = 0 V, Vos = -25 V, f= 1 MHz 1220 pF
Reversen Transfer Capacitance Crss 915
Total Gate Chargec Qg 140 225
Gate-Source ChargeC Qgs Vros = -30 V, VGS = -10 V, ID = -75 A 30 n0
Gate-Drain Chargec di 30
Turn-On Delay Timec tam") 13 20
Rise TimeC tr VDD = -30 V, RL = 0.47 Q 140 225 ns
Turn-Off Delay Timec td(off) ID = -75 A, VGEN = -10 V, Rs = 2.5 Q 115 185
Fall Timec if 175 300
Source-Drain Diode Ratings and Characteristics (Tc = 25"C)b
Continuous Current Is -75
Pulsed Current ISM -240 A
Forward Voltagea VSD IF = -75 A, VGS = 0 V -1.1 -1.3 V
Reverse Recovery Time trr 60 120 ns
Peak Reverse Recovery Current IRWREC) IF = -75 A, di/dt = 100 Alps 2.2 3.5 A
Reverse Recovery Charge Qrr 0.176 0.21 “C
Notes:
a. Pulse test; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70891
S-99404-Rev, B, 29-Nov-99
VISHAY SUP/SUB75P05 08
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 . . 200 l
vss=10thry7V Tc=-55°C /
200 (/) 160 25°C I
Ct f iiic"
E 150 / p'" 5 120 125''C -
'r, 's
o 'lf' o
g 100 f, g 80
Cl 4 V D
D - CI
- 50 / - 40
0 2 4 6 8 IO 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
120 l 0.06
Tc = -55oC 25°C
s,,,,,,-'''" J,'.?,',? - a th04 /
p:,,,,,,;,,;,,';,',::',''''':'''''"''':':'"''''''''''''''''''''--"'''" 17r0.03 I
0.02 /
VGS = 4.5 v //
0.01 - Vss=10V -
9 fs— Transconductance (S)
rDS(on)— On-ReSIstance (
40 60 80 100 O 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
12000 20 "
10000 VDS = 30 v /
k Ciss ii) 16 - b=75A "
J2 8000 g /
8 > 12
o5. g "
g 6000 (,8)
, s) 8
I 4000 a pr
2000 oss
NC:2.trr--r-" S
C m---, -
0 11 22 33 44 55 0 50 100 150 200 250 300
VDs - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 70891 www.vishay.com . FaxBack 408-970-5600
S-99404-Rev, B, 29-Nov-99
SUP/SUB75P05-O8
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
VGS = 10 V
ID = 30 A
A 1.6 4/
o: -'" A
G) a - o
g A 1/ g To-- 150 C
m TD 1 2 t
z a " a
w = / O
iY E w,-"''' 8
r': o / S
o ?.5... 0.8 7 8
L s,,..-''' l
E, (r)
8 0.4 -
-50 -25 0 25 5O 75 100 125 150 175 o 1 10
T J - Junction TemperatureCC) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 70
65 - ID = 250 MA r,,,-'''''''
100 'Av (A) @ TJ = 25°C s,,,,,,,,.,-.--'''"
S' 60 /
Iii" w r,...-'"'
E 10 g 55 ore'''
IAV (A) @ To = 150°C
0.1 40
0.00001 0.0001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) TJ - Junction Temperature(°C)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70891
b4 S-99404-Rev, B, 29-Nov-99
VISHAY
SUP/SUB75P05-08
New Product Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
90 500
75 Limited
"N, 100 by rDS(on)
fi 60 \ Ci.::
o 45 o
I 30 I 10
_ l Tc = 25°C
15 Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Case Temperature CC) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
l Duty Cycle = 0.5
g 8 0.2
g , 0.1
ta a 0.1
Single Pulse
10-5 104 10-3 10-2 10-1 I 3
Square Wave Pulse Duration (sec)
Document Number: 70891 www.vishay.com . FaxBack 408-970-5600
S-99404-Rev, B, 29-Nov-99 2-5
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