SUB75P03-07 ,P-Channel 30-V(D-S) 175C MOSFET FaxBack 408-970-5600S-00821—Rev. B, 24-Apr-002-1SUP/SUB75P03-07Vishay Siliconix
SUB75P03-07
P-Channel 30-V(D-S) 175C MOSFET
VISHAY
SUP/SUB75P03-O7
Vishay Siliconix
P-Channel 30-V (D-S) 1750C MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (O) In (AP
0.007 @ VGS = -10 V $75
0.010@VGS= -A.5 V $75
T0-220AB
C) TO-263
DRAIN connected to TAB H Ll H
Top View
Top View SUB75P03-07
SUP75P03-07
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS i 20 V
Continuous Drain Current TC = 2500 ID 453
(To = 175 C) TC =125°C -65 A
Pulsed Drain Current IDM -240
Avalanche Current IAR -60
Repetitive Avalanche Energyb L = 0.1 mH EAR 180 mJ
To = 25°C (TO-220AB and TO-263) 187d
Power Dissipation PD W
TA = 25°C (TO-263)c 3.75
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)C RthJA 40
Junction-to-Ambient
Free Air (TO-220AB) Rth0A 62.5 "C/W
Junction-to-Case Rmoc 0.8
Notes:
a. Package limited.
b Duty cycle 5 1%.
c. When mounted on I" square PCB (FR-4 material).
d See SOA curve for voltage derating.
Document Number: 71109
S-00821-Rev. B, 24-Apr-00
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SUP/SUB75P03-O7
Vishay Siliconix
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SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 11A -30
Gate Threshold Voltage Vegan) VDs = VGS, ID = -250 11A -1 -3 V
Gate-Body Leakage less VDS = 0 V, VGS = 120 V i 100 nA
vDS = -30 v, VGS = o v -1
Zero Gate Voltage Drain Current Iross Vos = -30 V, VGS = O V, T: = 125°C -50 “A
v03: -30 v,sz=ov, TJ = 175°C -250
On-State Drain Currents low”) Vros = -5 V, VGS = -10 V -120 A
VGS = -10 V, ID = -30 A 0.0055 0.007
Drain-Source On-State Resistancea rDS(on) VGS = -1 0 V, ID = -30 A, TJ = 125°C 0.010 Q
VGs=-10 V,ID= -30A,Tv=1750C 0.013
VGS = -A.5 V, ID = -20 A 0.008 0.010
Forward Transconductancea gfs VDS = -1 5 V, ID = -75 A 20 S
Dynamic"
Input Capacitance Ciss 9000
Output Capacitance Coss VGS = 0 V, Vos = -25 V, f= 1 MHz 1565 pF
Reversen Transfer Capacitance Crss 715
Total Gate Chargec Qg 160 240
Gate-Source ChargeC Qgs Vos = -1 5 V, VGS = -10 V, ID = -75 A 32 no
Gate-Drain Chargec di 30
Turn-On Delay Timec tdwn) 25 40
Rise Timec tr VDD = -15 V, RL = 02 Q 225 360 ns
Turn-Off Delay Timec td(oti) b = -75 A, VGEN = -10 V, Rs = 2.5 Q 150 240
Fall Timec if 210 340
Source-Drain Diode Ratings and Characteristics (Tc = 25"C)b
Continuous Current Is -75
Pulsed Current ISM -240 A
Forward Voltagea I/sro IF = -75 A, VGS = 0 V -1.2 -1.5 V
Reverse Recovery Time trr 55 100 ns
Peak Reverse Recovery Current IRWREC) IF = -75 A, di/dt = 100 Alps 2.5 5 A
Reverse Recovery Charge Qrr 0.07 0.25 “C
Notes:
a. Pulse test; pulse width s 300 ps. duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600
Document Number: 71109
S-00821-Rev. B, 24-Apr-00
VISHAY
SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS =10thru 6 v
Ct 5 V
E 150 -
Cl 4 v
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
To = -551
120 ---.
A 25''C
W.. -,,e'''"''''''' --
a: 125°C
2 90 / w,,,----''"'''" 4.
g pp''''''; /
a (,CC'5'c--'-''''"''''''''''
to, 60
r- (jf''''
0 20 4O 60 80 100
ID - Drain Current (A)
Capacitance
10000 \ Ciss
b. 8000
'6 6000
I 4000
o Js, Coss
0 6 12 18 24 30
VDs - Drain-to-Source Voltage (V)
| D — Drain Current (A)
rDS(on)— On-Resistance( 9
W33 — Gate-to-Source Voltage (V)
Transfer Characteristics
Tc = -551 I
160 25°C
120 /y
O 1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS= 10V
O 20 40 60 80 100 120
ID - Drain Current(A)
Gate Charge
VDS=15V
16-dC75A ,,,,,/'''"
8 ,,,,,,/''''
4 sp'''
0 50 100 150 200 250 300
Qg - Total Gate Charge (nC)
Document Number: 71109
S-00821-Rev. B, 24-Apr-00
www.vishay.com . FaxBack 408-970-5600
SUP/SUB75P03-O7
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
VGS = 10 V
ID = 30 A l/
1.5 - /
E / a" T J = 150°C
8 1.2 iii"
E S / 3
8 5 o 9 0
u; E . / b'
E O CI
o ?.5... / 8
I 0.6 I
5/ (r)
-50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0
T J - Junction TemperatureCC) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Avalanche Current vs. Time Junction Temperature
1000 45
I = 250
D “A w.,,,,,,,.,,,,----"''''''''''''''''''
100 'Av (A) @ TA = 25''C 40 ---'"
ty s,,-'''
a g e,,,,-'''''"
E 10 g 35 ,,,,,,-""
IAV (A) @ TA=150°C
0.1 25
0.00001 0.0001 0.001 0.01 0.1 1 -50 -25 0 25 50 75 100 125 150 175
tin (Sec) TJ - Junction Temperature(°C)
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b4 S-00821-Rev. B, 24-Apr-00
SUP/SUB75P03-O7
Vishay Siliconix
VISHAY
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
90 1000
Cii 60 \ Ci.::
'li g Limited
0 45 o 10 r
I 30 I
To = 25°C
15 Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Case Temperature CC) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
1 Duty Cycle = 0.5
_ 0.05
Thermal Impedance
Normalized Effective Transient
Single Pulse
1 0-4 10-3 1 0-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71109 www.vishay.com . FaxBack 408-970-5600
S-00821-Rev. B, 24-Apr-00 2-5
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