SUB75N06-08 ,N-Channel Enhancement-Mode Trans S-05111—Rev. F, 10-Dec-012-1SUP/SUB75N06-08Vishay Siliconix ..
SUB75N08-09L ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB75N08-09LNew ProductVishay SiliconixN-Channel 75-V (D-S), 175C MOSFET
SUB75N06-08-SUP75N06-08
N-Channel Enhancement-Mode Trans
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VISHAY
SUP/SUB75N06-08
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY 06 $ sst6 (5)
V(BR)DSS (V) rDS(on) (Q) ID (A) A''il 6 's'"issx'' C.
60 0.008 758 . ssO m 5
“WM“ oe? tt
TO-220AB
T0-263
DRAIN connected to TAB H Ll H
Top Vew
G D S S
SUB75N06-08
Top Mew N Ch I MOSFET
SUP75N06-08 - anne
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS d: 20 V
Continuous Drain Current To = 25°C I 75a
(To=175"C) TC=125°C D 55
Pulsed Drain Current IBM 240
Avalanche Current IAR 60
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Tc = 25''C (TO-220AB and T0-263) 250c
Power Dissipation PD W
TA = 25°C (TO-263)d 3.7
Operating Junction and Storage Temperature Range Ts Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient . Rth0A
Free Air (TO-220AB) 62.5 oCIW
Junction-to-Case Rch 0.6
a. Package limited,
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on I" square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http:/Mww.vishay.com/www/product/spice.htm
Document Number: 70283 www.vishaycom
S-05111-Rev. F, IO-Dec-OI
SUPISUB75N06-08
Vishay Siliconix
IE=7'"
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = O V, ID = 250 yA 60 V
Gate Threshold Voltage VGS(th) Vos = Vss, b = 250 pA 2.0 3.0 4.0
Gate-Body Leakage Isss VDS = O V, VGS = i 20 V i 100 nA
VDs=60V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS VDs = 60 V, VGs = 0 V, To = 125°C 50 MA
VDS=60V,VGS=0V,TJ= 175°C 150
On-State Drain Currenta b(on) VDs = 5 V, N/ss = 10 V 120 A
VGS = 10 V, ID = 30 A 0.007 0.008
Drain-Source On-State Resistance" roam) VGS = 10 V ID = 30 A, TJ = 125°C 0.012 f2
VGS=1OV.ID=30A,TJ= 175°C 0.016
Forward Transconductancea gts VDs = 15 V, ID = 30 A 30 S
Dynamicb
Input Capacitance Ciss 4800
Output Capacitance Coss VGS = O V, VDS = 25 V, f= 1 MHz 910 pF
Reverse Transfer Capacitance Crss 270
Total Gate ChargeC % 85 120
Gate-Source ChargeC Q95 VDS = 30 V VGS = 10 V, ID = 75 A 28 NC
Gate-Drain Chargec di 26
Turn-On Delay TimeC td(on) 20 40
Rise Timec tr VDD = 30 V, RL = 0.47 Q 95 200 ns
Turn-Off Delay Timec two In E 75 A, VGEN = 10 V, Re = 2.5 Q 65 120
Fall Timec If 20 60
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 75 A
Pulsed Current ISM 240
Forward Voltage" VSD IF = 75 A , l/ss = 0 V 1.0 1.3 V
Reverse Recovery Time trr 67 120 ns
Peak Reverse Recovery Current IRWREC) IF = 75 A, di/dt = 100 Alps 6 8 A
Reverse Recovery Charge Qrr 0.2 0.48 wc
a. Pulse test: pulse width s 300 usec. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70283
2-2 S-05111-Rev. F, IO-Dec-OI
VISHAY SUP/SUB75N06-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 200
V = 10, 9, 8 V
GS 7 V f
6 v 150
ii:". tr"--- i
E 150 E
(1) d)
o o 100
g 100 g
I 5 V I
o o 50 Tc = 125°C
- 50 f - I
0 -..-.l.-, 0 I I
O 2 4 6 8 IO 0 1 2 3 4 5 6 7
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
120 l 0.010
100 TC = _5500 _.,,..,,-,,,.,,,.),,-,
25°C 0.008
"---- A
a o..--'''''" a
t; 80 I,,,,---' 125°C I
g pt",,,,,,-' g 0.006
- ----". u
(i, 60 I m.,,.,,-----"""'""' .3
g ft', 8 0.004
m 40 l
I //'" "ii,'
m 20 ff' 0.002
0 0.000
O 20 4O 60 80 100 0 20 40 60 80 100 120
Vas-Gate-to-Source Voltage (V) b - Drain Current (A)
Capacitance Gate Charge
7000 20
6000 - /''''
A VDS - 30 V
a 16 - ID = 75 A /'''
'ik" 5000 ld'
t; S 12 /
8 4000 8 I
J2. 5 ,,,,,/'''
ir 3000 is, 1
o a', 8
I a' o,,p''"
o 2000 © '-
1000 Crss ,
O 10 20 30 40 50 60 O 25 50 75 100 125 150 175
Vos - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 70283
www.vishaycom
S-05111-Rev. F, IO-Dec-OI
SUPISUB75N06-08
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rDS(on) — On-Resistance ( £2 )
(Normalized)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
VGS = 10 V
ID = 30 A
w,,,,.''''''
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
Ts - Junction Temperature (°C) VsD - Source-to-Drain Voltage (V)
THERMAL RATINGS
ID — Drain Current (A)
Normalized Effective Transient
Thermal Impedance
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 500
80 Limrited
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Case Temperature CC) Wm - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Ity-5 10-4 10-3 10-2 10-1 1 3
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70283
S-05111-Rev. F, IO-Dec-OI
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