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SUB75N05-06-SUP75N05-06
N-Channel Enhancement-Mode Trans
"ii=iir
VISHAY
SUP/SUB75N05-06
Vishay Siliconix
N-Channel 50-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q) ID (A)
50 (h006 75
T0-220AB
TO-263
DRAIN connected to TAB H LI H
Top Vew
Top Ihew SUB75N05-06
SUP75N05-06
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage l/ss ck 20 V
Continuous Drain Current TC = 25cc I 75a
(TJ=175°C) TC=125°C D 70
Pulsed Drain Current IBM 240
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Tc = 25°C (TO-220AB and TO-cle) 250c
Power Dissipation PD W
TA = 25°C (TO-263)d 3.7
Operating Junction and Storage Temperature Range To, Tstg -55 to 175 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient . RNA
Free Air (TO-220AB) 62.5 °C/W
Junction-to-Case Rch 0.6
Package limited.
Duty cycle 5 1%.
See SOA curve for voltage derating.
When mounted on 1" square PCB (FR-4 material).
DocumentNumber: 70292
S-0511(y-Rev. E, 10-Dec-01
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SUP/SUB75N05-06 VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = O V, ID = 250 yA 50 V
Gate Threshold Voltage VGS(th) Vos = Vss, b = 250 pA 2.0 4.0
Gate-Body Leakage Isss VDS = O V, VGS = i 20 V i 100 nA
VDs=50V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS VDs = 50 V, VGs = 0 V, To = 125°C 50 MA
VDs=50V,VGs=0V,Tv= 175°C 150
On-State Drain Currenta b(on) VDs = 5 V, N/ss = 10 V 120 A
VGS = 10 V, ID = 75 A 0.005 0.006
Drain-Source On-State Resistance" roam) VGS = 10 V ID = 75 A, TJ = 125°C 0.010 f2
VGS=1OV.ID=75A,TJ= 175°C 0.012
Forward Transconductancea gts VDs = 15 V, ID = 60 A 30 S
Dynamicb
Input Capacitance Ciss 4500
Output Capacitance Coss VGS = O V, VDS = 25 V, f= 1 MHz 1100 pF
Reverse Transfer Capacitance Crss 360
Total Gate ChargeC % 85 120
Gate-Source ChargeC Q95 VDS = 25 V VGS = 10 V, ID = 75 A 25 NC
Gate-Drain Chargec di 25
Turn-On Delay TimeC td(on) 20 40
Rise Timec tr VDD = 25 V, RL = 0.33 Q 20 100 ns
Turn-Off Delay Timec two In E 75 A, VGEN = 10 V, Re = 2.5 Q 50 100
Fall Timec If 20 40
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 75 A
Pulsed Current ISM 200
Forward Voltage" VSD IF = 75 A , l/ss = O V 1.0 1.4 V
Reverse Recovery Time trr 65 120 ns
Peak Reverse Recovery Current IRWREC) IF = 75 A, di/dt = 100 Alps 5 8 A
Reverse Recovery Charge Qrr 0.16 0.48 wc
a. Pulsetest: pulse width s 300 usec. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com Document Number: 70292
2-2 S-05110-Reu. E, IO-Dec-OI
"ii=iir
VISHAY
SUP/SUB75N05-06
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250 200
VGS = 8, 9, 10 v /"
'iii. E
"'fz,' 150 b V le,'
ta to 100
g 100 S
- 50 (Sl/ - 50 T = 125°C ,
1 25°C
tl/ -551
O 2 4 6 8 10 0 1 2 3 4 5 6 7
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
150 I 0.008
Tc = -55''C
125 ---"''''"
A w.,--'''"'"'" 25°C a 0.006 v = 10 v
f.2. 100 / ----"- V Gt:
8 /'''t" r..-''"" 8
F, C,,,.-'"''''''' g
15 125°C -
g 75 / (r',' 0.004 VGS = 20 v
g /// -----"" 33
o /-" I
J' 50 e---''''"''''''''" I
1w. w't,Cw"''" ot, 0.002
CD 25 3o“
0 0.000
0 20 4O 60 80 0 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
8000 20
A Vos = 25 v
it 16 - ID = 75 A /
6000 g "
Fs" S',
"i," C ss , 12 ow'''
5 b' f
g 4000 9,3,
8 7: 8 I
2000 'ss,,,,,,.. cuss ;, 4
Crss g
0 10 20 30 40 50 0 25 50 75 100 125 150 175
VDS - Drain-to-Source Voltage (V)
% - Total Gate Charge (nC)
DocumentNumber: 70292
S-05110-Rev. E, 10-Dec-01
www.vishay.com
SUP/SUB75N05-06
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5 _ 100
VGS = 10 V
ID = 75 A
Cl ,,,,P A
V e,,,,,," s.
[lo,' A / E
m T7 1 5 I g
Es' 3 ',,,-'" 3
8 T, 0 10
a; E / g
6 g 1.0 08)
I o.--"''
E ..--'" m
f? 0.5
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
To - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 500
ii.:] 'N. g.]
E 60 E Li
'li " 'il--,' by r
‘0'" 40 OT 10
0 25 50 75 100 125 150 175 0 1 1 10 100
Tc - Case Temperature (°C)
Normalized Effective Transient
Thermal Impedance
Ity-s 10-4 10-3
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10-2 IO-l 1 3
Square Wave Pulse Duration (sec)
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DocumentNumber: 70292
S-05110-Reu. E, IO-Dec-OI
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