SUB75N03-07 ,N-Channel 30-V (D-S) 175 MOSFETSUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUB75N03-07-SUP75N03-07
N-Channel 30-V (D-S) 175 MOSFET
VISHAY
SUPISUB75N03-O7
Vishay Siliconix
N-Channel 30-V (D-S) 17500 MOSFET
PRODUCT SUMMARY
V(BR)DS$ (V) rDSion) (Q) ID (A)
30 0.007 @ VGS = 10 v 75a
0.01 @Vss-- 4.5V 70
TO-220AB
C) TO-263
DRAIN connected to TAB
Top View
SUP75N03-07
TopView
SUB75N03-07
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS cl: 20
TC = 25°C 75a
Continuous Drain Current (TJ = 175°C) lo
Tc = 100°C 64
Pulsed Drain Current IDM 240
Avalanche Current 'AR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
Power Dissipation TC = 25°C Pro 120c W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient Rth0A
Free Air (TO-220AB) 62.5 °CNV
Junction-to-Case Rthuc 1.25
Notes:
a. Package limited.
b. Duty cycle 5 1%.
C. See SOA curve for voltage derating.
d. When mounted on l" square PCB (FR-4 material).
Document Number: 70794
S-000652-Rev. D, 27-Mar-00
www.vishay.com . FaxBack 408-970-5600
SUP/SUB75N03-07
Vishay Siliconix
VISHAY
MOSFET SPECIFICATIONS IT,, =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 30
Gate Threshold Voltage Vegan) Vos = VGs, IDS = 250 pA 1 2
Gate-Body Leakage ksss VDS = 0 V, VGs = $20 V i 100 nA
fs-- 30V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDs = 30 V, VGS = 0 V, T: = 125°C 50 11A
Ws-- 30V,VGs=0V,TJ=175''C 150
On-State Drain Current3 low“) Vros = 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.006 0.007
. . VGS=10V,ID= 30A, TJ=125°C 0.011
Drain-Source On-State Resistancea ms(on) Q
VGS = 10 V, ID = 30 A, TJ = 175°C 0.015
VGS=4.5V, b-- 20A 0.01
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 S
Dynamicb
Input Capacitance Ciss 5600
Output Capacitance Coss VGS = O V, VDS = 25 V, f= 1 MHz 1100 pF
Reversen Transfer Capacitance Crss 450
Total Gate Chargec Q9 70 130
Gate-Source Chargec Qgs Vros = 15 V, VGS = 10 V, ID = 75A 18 nC
Gate-Drain ChargeC di 10
Turn-On Delay TimeC tam") 18 30
Rise Time0 tr VDD = 15 V, RL = 0.2 Q 12 20 ns
Turn-Off Delay Tume° td(on) ID 2 75 A, VGEN = 10 V, Rs = 2.5 Q 60 120
Fall Timec 1f 22 40
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is 75
Pulsed Current ISM 200
Forward Voltage" VsD IF = 75 A, Vss = O V 1.2 1.5 V
Reverse Recovery Time trr IF = 75 A, dildt = 100 Alps 55 100 ns
Notes:
a. Pulse test; pulse width 3 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600 Document Number: 70794
2-2 S-000652-Rev. D, 27-Mar-00
VISHAY
SUPISUB75NO3-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
, Vss=10,9,8,7,6V
Ci 5 V
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
Transconductance
Tc = -55UD
100 4'
c,7J.'. s,,,,,-'''''''' 25°C
o 80 I ---""'""
§ -----"'" 12 I
13 w,.---''''''' 5
[r,' pp''''''" s,,,--'""'"'
E 40 / o,,,-'''''''
L» ff''''
0 10 20 30 40 50
VGS - Gate-to-Source Voltage (V)
Capacitance
Is, Ciss
6000 -
ID 4000
o 2000 'ss, Coss
C '"sm.-__,
0 6 12 18 24 30
Vos - Drain-to-Source Voltage(V)
rDS(on) — On—Resistance ( Q) | D — Drain Current(A)
VGs — Gate-to-Source Voltage (V)
Transfer Characteristics
Tc = 125°C
25°C A
I "'ssw -55''C
0 1 2 3 4 5
N/ss - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current
Vas = 4.5 V
0.009 l
VGS = 10 V
0 20 40 60 80 100
b - Drain Current(A)
Gate Charge
V = 10V
16 GS w,rs'''
- b--75A
12 ',w'''''''''''
,,,,,,,,,w'''''''''
s,,,,,,,,'''''''''"
4 o,,,,,''''''
0 20 40 60 80 100 120
Qg - Total Gate Charge (nC)
Document Number: 70794
S-000652-Rev. D, 27-Mar-00
www.vishay.com . FaxBack 408-970-5600
SUP/SUB75N03-07
. . . . VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 100
VGS = 10 V
ID = 30 A /
A 2.0 - o
g " A T J - 150 c
' s,,,,,,,'''''''' .5: 10
ji'; 8 1 5 ,/ g
u: g 3
tD m / O
fi E / 8
CD a 1.0 ,1 g
I r,...-"' w 1
E w,,,,,,,,,,.,--''"''''" '
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature(°C) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs. Safe o eratin Area
Ambiemt Temperature p g
80 500
60 N. 100
Ili)' 'ss, tt
E N, E
o 40 o
r? C" 10
E 20 E
O 25 5O 75 100 125 150 175 0.1 1 10 100
TA -Ambient Temperature CC) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
10-5 10-4 10-3 10-2 IO-I 1 3
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70794
b4 S-000652-Rev. D, 27-Mar-00
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