SUB70N06-14 ,N-Channel Enhancement-Mode Trans FaxBack 408-970-5600S-57253—Rev. C, 24-Feb-982-3C – Capacitance (pF) g – Transconductance (S) ..
SUB75N03-04 ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175C MOSFET V (V) r () I (A)(BR) ..
SUB75N03-07 ,N-Channel 30-V (D-S) 175 MOSFETSUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
SUB70N06-14-SUP70N06-14
N-Channel Enhancement-Mode Trans
VISHAY
SUP/SUB70N06-14
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (O) ID (A)
60 0.014 70a
TO-220AB
T0-263
DRAIN connected to TAB
Top View
SUP70NO6-14
H Ll H
TopView
SUB70N06-14
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS ck 20 V
TC = 25°C 7Oa
Continuous Drain Current (TJ = 1750C) ID
Tc = 100°C 49
Pulsed Drain Current IDM 160
Avalanche Current IAR 70
Repetitive Avalanche Energyb L = 0.1 mH EAR 180 md
Tc = 25°C (TO-22OAB and TO-263) 142c
Power Dissipation PD W
TA = 25°C (TO-263)d 3.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RthJA
Free Air (TO-220AB) 62.5 °C/W
Junction-to-Case Rch 1.05
Notes:
a. Package limited.
b. Duty cycle s 1%.
C. See SOA curve for voltage derating.
d. When mounted on I" square PCB (FR-4 material).
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Document Number: 70291
S-57253-Reu C, 24-Feb-98
www.vishay.com . FaxBack 408-970-5600
SUP/SUB70N06-14
Vishay Siliconix
VISHAY
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 60
Gate Threshold Voltage VGS(th) VDS = VGS, IDS = 1 mA 2.0 3.0 4.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V i 100 nA
VDs=60V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDs = 60 V, VGS = O V, T: = 125°C 50 11A
VDS=60V,VGS=OV,TJ=175°C 150
On-State Drain Currents low") VDs = 5 V, VGS = 10 V 70 A
VGs=10 V,ID=30A 0.014
Drain-Source On-State Resistancea rDs(on) VGS = 10 V, ID = 30 A, TJ = 125°C 0.023 Q
VGS = 10 V, ID = 30A, TJ = 175°C 0.028
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 50 S
Dynamicb
Input Capacitance Ciss 2400
Output Capacitance Coss VGS = 0 V, VDs = 25 V, f= 1 MHz 490 pF
Reversen Transfer Capacitance Crss 130
Total Gate ChargeC Q9 45 70
Gate-Source Chargec Qgs Vos = 30 V, VGs = 10 V, ID = 60 A 12 nC
Gate-Drain Chargec di 16
Turn-On Delay Timec td(on) 13 30
Rise 'I'Imec tr VDD = 30 V, RL = 0.47 Q 11 30 ns
Turn-Ott Delay Timec tdmff) ID = 60 A, VGEN = 10 V, Rs = 2.5 Q 30 60
Fall Timec tf 11 25
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 70
Pulsed Current ISM 160 A
Forward Voltagea VSD IF = 70 A, VGS = 0 V 1.4 V
Reverse Recovery Time trr 47 ns
Peak Reverse Recovery Current IRWREC) IF = 60 A, di/dt = 100 Alps 3.5 A
Reverse Recovery Charge Qrr 0.08 ”C
Notes:
a. Pulse test; pulse width s 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
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Document Number: 70291
S-57253-Rev. C, 24-Feb-98
SUP/SUB70N06-14
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
150 100
VGS = 10, 9, 8 V
g 100 'iii'::
E E 60
to 75 t
I' s 40
'i 50 ‘31
© a Tc = 125°C
25 20 J,, /
l _/ -55''C
0 o 4 I
0 2 4 6 8 10 O 2 4 6 8 10
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
TC = -55''C
g.". E
g 8 0.0150
S 53 VGS = 1 3 V s,........----""""
3 ii' 0.0125 _..,..----" g
g 6 VGS = 20 V
I' I 0.0100
CN f? 0.0075
0 IO 20 30 40 50 60 O 10 20 30 4O 50 60 70
' - Gate-to-Source Voltage (V) ID - Drain Current (A)
Capacitance Gate Charge
3500 20 /
3000 -
I/os - 30 v
S 16 - b = 60 A /
g: 2500 g /'"
8 > 12 /
c 2000 8
8 1500 (i'; 8 I
I lis' /
o 1000 o /"
0 10 20 30 40 O 20 40 60 80 100
VDs - Drain-to-Source Voltage(V) Qg - Total Gate Charge (nC)
Document Number: 70291 www.vishay.com . FaxBack 408-970-5600
S-57253-Reu C, 24-Feb-98 2-3
SUP/SUB70N06-14
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5 I 100
VGS = 10 V
ID = 30 A
A 2.0 ,/
E ',,,w''''' <3 Tc = 150°C
8 ',,,w''''' E
C G 1.5 9
I-', 'h' ,,,e'''" 5
8 T, ',,--''" o 10
n: E 8
& t23 1 0 g
?v . / w
5 ,.,--'''' ©
-50 -25 0 25 50 75 100 125 150 175 0.25 0.50 0.75 1.00 1.25 1.50
T J - Junction TemperatureCC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
100 500
80 100
Ci:] Ci"
it 60 'ss, if us
a "ss 6' 10
E 40 S 1 ms
E N. E 1 1'00...
O 25 50 75 100 125 150 175
Tc - Case Temperature CC)
Normalized Effective Transient
Thermal Impedance
Ie Pulse
10-5 104 10-3
Square Wave Pulse Duration (sec)
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
IO-l 1 3
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Document Number: 70291
S-57253-Rev. C, 24-Feb-98
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