SUB70N03-09P ,N-Channel 30-V (D-S) 175C MOSFET PWM OptimizedSUP/SUB70N03-09PVishay SiliconixN-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
SUB70N03-09P-SUP70N03-09P
N-Channel 30-V (D-S) 175C MOSFET PWM Optimized
SUPISUB70N03-09P
Vishay Siliconix
VISHAY
N-Channel 30-V (D-S), 175°C, MOSFET PWM Optimized
PRODUCT SUMMARY $3 'ae''
o . SN'''' (5)
V(BR)DS$ (V) rDS(on) (Q) ID (A) it Iii,',,' ““00 t?
0.009 @ VGS = 10 v l 70a ',siisss's' ©
30 W o
0.015@sz= 4.5V :55 ttft Cet''
TO-220AB D
C) TO-263
DRAIN connected to TAB H Ll H
Top View
G D s s
Top View SUB70N03-09
SUP70N03-09
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDs i 30
Gate-Source Voltage VGS $20
Tc = 25°C l 70a
Continuous Drain Current (TJ = 175°C) ID
Tc = 100°C i 50
Pulsed Drain Current IBM 1 180
Avalanche Current IAR 145
Repetitive Avalanche Energyb L = 0.1 mH EAR 101 mJ
Power Dissipation Tc = 25°C PD 930 W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient RWA
Free Air (TO-220AB) 62.5 ''C/W
Junction-to-Case Rmoc 1.6
Notes:
a. Package limited.
b. Duty cycle 5 1%.
C. See SOA curve for voltage derating.
d. When mounted on l" square PCB (FR-4 material).
Document Number: 70821
S-59917-Rev, A, 28-Sep-98
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SUP/SUB70N03-09P
. . . . VISHAY
Vishay Siliconix
MOSFET SPECIFICATIONS IT,, =25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 30
Gate Threshold Voltage Vegan) Vos = VGs, IDS = 250 pA 1 2
Gate-Body Leakage ksss VDS = 0 V, VGs = $20 V i 100 nA
fs-- 24V,VGs=0V 1
Zero Gate Voltage Drain Current loss VDs = 24 V, VGS = 0 V, T: = 125°C 50 11A
Ws-- 24V,VGs=0V,TJ=175''C 150
On-State Drain Current3 low“) Vros = 5 V, VGS = 10 V 70 A
VGS = 10 V, ID = 30 A 0.007 0.009
. . VGS=10V,ID= 30A, TJ=125°C 0.0135
Drain-Source On-State Resistancea ms(on) Q
VGS = 10 V, ID = 30 A, TJ = 175°C 0.017
VGS=4.5V, b-- 20A 0.011 0.015
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 60 S
Dynamicb
Input Capacitance Ciss 2700
Output Capacitance Coss VGS = O V, VDS = 25 V, f= 1 MHz 680 pF
Reversen Transfer Capacitance Crss 360
Total Gate Chargec Q9 45 70
Gate-Source Chargec Qgs Vros = 15 V, VGS = 10 V, ID = 70A 8.5 nC
Gate-Drain ChargeC di 11
Turn-On Delay TimeC tam") 13 20
Rise Times tr VDD = 15 V, RL = 0.21 Q 7 15 ns
Turn-Off Delay Timec td(on) ID 2 70 A, VGEN = 10 V, Rs = 2.5 Q 35 60
Fall Timec 1f 12 20
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls 70
Pulsed Current ISM 180
Forward Voltage" VsD IF = 70 A, Vss = O V 1.2 1.5 V
Reverse Recovery Time trr IF = 70 A, dildt = 100 Alps 35 70 ns
Notes:
a. Pulse test; pulse width 3 300 ps, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
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2-2 S-59917-Rev. A, 28-Sep-98
VISHAY SUP/SUB70N03 09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
180 100
VGS=10thru7V 6V
'id:''] 120 Ct
E E 60
8 90 8
g E 40
r? 60 'il TC = 125°C
- - 20
30 25°C /
"ssu -55''C
0 0 j I
0 2 4 6 8 10 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
100 l 0.030
Tc = -55l
80 , A 0.025
2f "-'''" 25°C 8 0.020
U ws''' C
c 60 I E
m l .2
"G / 125°C 8 I
g / a; 0.015 Vcs = 4.5 v
o C -..,,,.k'''
E 40 " c?
2 0.010 VGS=10V -
I- / I?
w, O L, 0.005
0 10 20 30 40 50 60 70 0 20 40 60 80 100
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
4000 10 /'"
A Vros = 15 v
'rs, Ciss t.'. 8 - ID = 70 A /
A 3000 g
b, It',
ii; 2 6
'ti 2000 J''
I l "is]'
0 1000 "s..,. Coss I /
0 6 12 18 24 30 0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 70821 www.vishay.com . FaxBack 408-970-5600
S-59917-Rev, A, 28-Sep-98
SUP/SUB70N03-09P
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25
ott UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4 100
VGS = 10 V
2.0 b = 30 A
, 1.6 1/ if:
S E‘ " st,
n: G5 1.2 10
g: g " 8
O 2 / 5
I V / (8
A 0.8 I
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
T J - Junction TemperatureCC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs. .
Case Temperature Safe Operating Area
<3 "ss fi:,
E "ss, E
8 40 i 8
E "N E
D 's, D
O 25 50 75 100 125 150 175 0 1 1 10 100
Tc - Case Temperature CC) Vos - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
g 'i',
10-5 10-4 10-3 10-2 10-1 1 3
Square Wave Pulse Duration (sec)
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Document Number: 70821
S-59917-Rev. A, 28-Sep-98
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