SUP65P06-20 ,P-Channel Enhancement-Mode TransSUP/SUB65P06-20Vishay SiliconixP-Channel 60-V (D-S), 175C MOSFET V (V) r () I (A)(BR) ..
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SUP70N03-09P ,N-Channel 30-V (D-S) 175C MOSFET PWM Optimized FaxBack 408-970-5600S-59917—Rev. A, 28-Sep-982-3C – Capacitance (pF) g – Transconductance (S)f ..
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SUB65P06-20-SUP65P06-20
P-Channel Enhancement-Mode Trans
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VISHAY
SUP/SUB65P06-20
Vishay Siliconix
P-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q) ID (A)
-60 0.020 AMF
TO-220AB
T0-263
DRAIN connected to TAB
Top Ihew
SUP65P06-20
H Ll H
TopMew
SUB65P06-20
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Gate-Source Voltage VGS :l: 20 V
Continuous Drain Current TC 25 C I -65
(To = 175°C) TC = 125°C D -39
Pulsed Drain Current IBM -200
Avalanche Current IAR -60
Repetitive Avalanche Energyb L = 0.1 mH EAR 180 mJ
To = 25°C (TO-220AB and TO-263) 250d
Power Dissipation Pro W
TA = 125°C (TO-263)c 3.7
Operating Junction and Storage Temperature Range Ts Tstg -55 to 175 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)c RNA 40
Junction-to-Ambient
Free Air (TO-220AB) RthJA 62.5 'C/W
Junction-to-Case Rch 0.6
Notes:
a. Package limited,
b. Duty cycle s 1%.
c. When mounted on 1" square PCB (FR-4 material).
d. See SOA curve for voltage derating.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70289 www.vishay.com
S-05111-Rev. C, 10-Dec-01 2-1
SUP/SUB65P06-20
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 pA -60
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 WA -2.0 -3.0 -4.0 V
Gate-Body Leakage less Vos = 0 V, VGS = i 20 V i 100 nA
VDs=-60V,Vss=0V -1
Zero Gate Voltage Drain Current loss Vos = -60 V, VGs = 0 V, Tu = 125°C -50 "
V03: -60V,VGs=0V,Tv=175l -150
On-State Drain Current3 Iro(on) VDs = -5 V, VGS = -10 V -120 A
VGS = -10 V, ID = -30 A 0.017 0.020
Drain-Source On-State Resistancea rDS(on) VGS = -10 V, ID = -30 A, TJ = 125°C 0.033 Q
VGs=-10 V, ID=-30 A, TJ = 175°C 0.042
Forward Transconductancea gts Vos = -15 V, ID = -30 A 25 S
Dynamicb
Input Capacitance Ciss 4500
Output Capacitance Coss VGS = 0 V, VDs = -25 V, f= 1 MHz 870 pF
Reversen Transfer Capacitance Crss 350
Total Gate Chargec Q9 85 120
Gate-Source Chargec Q95 VDs = -30 V, VGS = -10 V, ID = -65 A 24 nC
Gate-Drain Chargec di 22
Turn-On Delay Time0 td(on) 15 40
Rise Timec t, VDD = -30 V, RL = 0.47 Q 40 80 ns
Turn-Off Delay Timec tis(ott) ID 2 -65 A, VGEN = -10 V, Rs = 2.5 Q 65 120
Fall Tlmec tf 30 60
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current ls -65
Pulsed Current ISM -200 A
Forward Voltagea VSD IF = -65 A, VGS = 0 V -1 .1 -1.4 V
Reverse Recovery Time trr 70 120 ns
Peak Reverse Recovery Current IRWREC) IF = -65 A, di/dt = 100 Alps 7 9 A
Reverse Recovery Charge Qrr 0.245 0.54 “C
Notes:
a. Pulsetest; pulse width 5 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing
d. Independent of operating temperature.
www.vishay.com . FaxBack 408-970-5600
Document Number: 70289
S-05111-Rev. C, 10-Dec-01
"ii=iir
VISHAY
SUP/SUB65P06-20
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
200 1 1
VGS = 10, 9, 8 v /
tj''''" 7 V
',,,,w-''''""''''""
Cai' 'iii':]
E 120 E
at) 6 V l'
g 80 S
I 5 V l
- 40 -
0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
Transconductance
80 Tc = -55''C -
a,,-''''"' 25°C
'C----',''''-'''''- 125°C
40 A -.
g fs—Transconductance (S)
rDS(on)— On—Resistance ( Q)
0 20 40 60 80 100
VGS - Gate-to-Source Voltage (V)
Capacitance
5000 K 0
's-....., ISS 3
c ttir',)
3 4000 =
.,ij. b'
g 3000 (,8)
I 2000 a'
1000 Crss ' oss ©
20 30 4O 50 60
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
1 1 //
160 " = _55DCI /
120 , 125°C
O 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.020 VGS = 10 V
VGS = 20 V
O 20 4O 60 80 100
ID - Drain Current (A)
Gate Charge
v =30V
16 - |DD=865A //
O 25 50 75 100 125 150 175
% - Total Gate Charge (nC)
Document Number: 70289
S-05111-Rev. C, IO-Dec-OI
www.vishay.com
SUP/SUB65P06-20
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5 I _ I 100
VGS = 10 V
b = 30 A
A 2.0 /
Cl 'i''" A
v w,,w'''' G.
g G" 1 5 / 3
Ei 3 " 3
8 E / 'a', 10
t? E L'
l g 1.0 U3)
(z or'''' sn
f? 0.5
-50 -25 0 25 50 75 100 125 150 175 0.3 0.3 0.6 0.9 1.2 1.5
T J - Junction Temperature CC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
80 500
_“ 100 Limited r
60 "ss,
Ci:] "ss, Il-i.:,
'- " IO
e, 40 e,
o 'N. o
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
le Pulse
0.1 1 10 100
VDs - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
10-5 ltr" 10’3
1&2 10-1 1 3
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600
Document Number: 70289
S-05111-Rev. C, 10-Dec-01
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