SUB45N05-20L ,N-ChanneL 50-V (D-S) 175C MOSFET, Logic LevelS-21855—Rev. B, 14-Oct-022-1SUP/SUB45N05-20LVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWIS ..
SUB60N06-18 ,N-Channel Enhancement-Mode Trans FaxBack 408-970-5600S–57253—Rev. D, 24-Feb-982-1SUP/SUB60N06-18Vishay Siliconix
SUB45N05-20L
N-ChanneL 50-V (D-S) 175C MOSFET, Logic Level
VISHAY
SUP/SUB45N05-20L
Vishay Siliconix
N-Channel 50-V (D-S), 175OC MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q) ID (A)
0.018 @ VGS =10 v
50 i45 a
0.020 @ VGS = 4.5 v
TO-220AB
TO-263
DRAIN connected to TAB
Top Ihew
SUP45N05-20L
TopMew
SUB45N05-20L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 50
Gate-Source Voltage VGS i 20 V
To = 25°C i453
Continuous Drain Current (TJ = 175°C) ID
To = 125°C £32
Pulsed Drain Current bs, i 100 A
Continuous Source Current (Diode Conduction)a Is 145
Avalanche Current IAR 145
Repetitive Avalanche Energyb L = 0.1 mH EAR 100 mJ
Tc = 25°C (TO-220AB and TO-263) 93C
Maximum Power Dissi ation P W
p TA = 25°C (TO-263)c D 3.75
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 ''C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient . RNA
Free Air (TO-220AB) 8.0 0cm]
Junction-to-Case RthC 1.6
a. Package limited.
b. Duty cycle 5 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 70948 www.vishay.com
S-21855-Rev. B, 14-Oct-02
SUP/SUB45N05-20L
Vishay Siliconix
IE=7'"
VISHAY
SPECIFICATIONS ITa =25°c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = O V, ID = 250 pA 50 V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 0A 1 2
Gate-Body Leakage less VDS = O V, VGs = cl: 20 V i 100 nA
VDS=50V,VGS=0V 1
Zero Gate Voltage Drain Current IDSS Vos = 50 V, VGs = 0 M TJ = 125°C 50 g/k
VDs=50\/,VG3=0\/,TJ=175°C 150
On-State Drain Currenta loam) VDS 2 5 V, VGS = 10 V 45 A
VGS=10V.ID=30A 0.018
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, To = 125°C 0.030 Q
VGS = 4.5 v, ID = 45 A 0.020
Forward Transconductancea gfs VDS = 15 V, ID = 45 A 20 S
Dynamicb
Input Capacitance Ciss 1800 3600
Output Capacitance Coss VGs = 0 V, Vros = 25 V, f= 1 MHz 370 pF
Reverse Transfer Capacitance Crss 130
Total Gate Chargec Q9 43 60
Gate-Source Chargec Qgs VDS = 25 V, VGS = 10 V, Iry = 45 A 7 nC
Gate-Drain Chargec ' 10
Turn-On Delay Time0 tam) 10 20
Rise Timec tr VDD = 25 V, RL = 0.6 Q 10 20 ns
Turn-cm Delay Timec two In E 45 A, VGEN = 10 V, Rs = 2.5 Q 32 60
Fall Tlmec tf 7 15
Source-drain Diode Ratings and Characteristics (Te = 25°C)b
Pulsed Current ISM 43
Forward Voltagea VSD IF = 45 A, VGS = 0 V 1.5
Reverse Recovery Time trr IF = 45 A, di/dt = 100 Alps 49 100 ns
a. Pulsetest; pulse width 5 300 MS. duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature.
www.vishay.com DocumentNumber: 70948
2-2 S-21855-Rev, B, 14-Oct-02
VISHAY
SUP/SUB45N05-20L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
100 " l _
[i)''''' VGS=10thru6V
8O 5 V‘
2 't', 2
E 60 If E
g 40 g
5 4 V 5
_ 20 -
O 2 4 6 8 IO
VDS - Drain-to-Source Voltage (V)
Transconductance
TC = - 5°C
A 60 A
ca r f.'..',
oij. l 5 C g
g 40 I 125 c ii'
g / tr
8 p"''''"'"" c'
J, 20 V 5,
C77 CI
O 10 20 30 40 50 60
ID - Drain Current (A)
Capacitance
2500 S'"
g 2000 =
15 1500 g
I 1000 a
O 10 20 30 4O 50
Vos - Drain-to-Source Voltage (V)
Transfer Characteristics
Tc=-125 C / -55°C
10 / ' i
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.02 - V = 4. V
0.01 VGS = 10 V
0 20 40 60
ID - Drain Current (A)
Gate Charge
8 VDS = 25 V
- ID = 43 A /
4 /__I
0 10 20 30 40 50
Q9 - TotaIGate Charge(nC)
Document Number: 70948
S-21855-Rev. B, 14-Oct-02
www.vishay.com
SUP/SUB45N05-20L
IE=7'"
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.25 l _ l
i VGS = 10 V
2.00 ID = 20 A
A 1.75 //
9: / 2 Tu = 150°C
8 1.50 t'-s"
E A ID
- m / t:
3 (il 1 25 / 8
n: E 8
i: 5 1.00 '-
v 0.75 w,,,,,-'''''' w
ts . - '
Sl. co
f:) 0.50 -
-50 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature(°C) VSD - Source-to-Drain Voltage(V)
THERMAL RATINGS
Maximum Drain Current vs. Case Temperature Safe Operating Area
60 300
Limited
45 's by rDS(on)
a" Ci:"
E "ss, E
m "ss, o 10
8 30 \ 8
E 's, E
o "ss, o
- 15 \ - 1
0 25 50 75 100 125 150 175
TC - Case Temperature CC)
1 10 100
VDS - Drain-to-Source Voltage(V)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
10-5 10-4 10-3
Square Wave Pulse Duration (sec)
10-1 1 3
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DocumentNumber: 70948
S-21855-Rev, B, 14-Oct-02
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