SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
SUB40N06-25L
N-Channel Enhancement-Mode MOSFETs, Logic Level
VISHAY
SUP/SUB40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175°C MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V) rDS(on) (Q) ID (A)
60 0.022@Vss=101/ 40
0.025 @ VGS = 4.5 v 40
TO-220AB
O TO-263
DRAIN connected to TAB H Ll H
Top View
Top View SUB40N06-25L
SUP40N06-25L
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS m, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vos 60 V
Gate-Source Voltage VGS i 20
Continuous Drain Current TC = 2500 I 40
(TJ= 175°C) Tc= 100°C D 25
Pulsed Drain Current IDM 100
Avalanche Current IAR 4O
Repetitive Avalanche Energya L = 0.1 mH EAR 8O mJ
. . . Tc = 25°C (TO-220AB and TO-263) got)
Power Dissipation PD W
TA = 25"C (TO-263)c 3.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)c 4O
Junction-to-Ambient RthJA
Free Air (TO-220AB) 80 “CNV
Junction-to-Case RthJC 1.6
Notes:
a. Duty cycle 5 1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70288
S-57253-Reu C, 24-Feb-98
www.vishay.com . FaxBack 408-970-5600
SUP/SUB40N06-25L
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 WA 60
Gate Threshold Voltage Vegan) Vos = VGS, IDS = 250 11A 1.0 2.0 3.0 V
Gate-Body Leakage less VDS = 0 V, VGS = 120 V i 100 nA
v.35: 60V,VGS=OV 1
Zero Gate Voltage Drain Current Iross VDs = 60 V, VGS = O V, T: = 125°C 50 11A
v03: 60V,VGs=0V,Tc=175''C 150
On-State Drain Currents low”) Vros = 5 V, VGS = 10 V 40 A
VGS =10 V, ID = 20 A 0.022
Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 20 A, TJ = 12500 0.043 C2
VCs-- 10 V, I0: 20A, Tv-- 175°C 0.053
Ves = 4.5 V, ID = 20 A 0.025
Forward Transconductancea gfs VDS = 15 V, ID = 20 A S
Dynamic"
Input Capacitance Ciss 1800
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f= 1 MHz 350 pF
Reversen Transfer Capacitance Crss 100
Total Gate Chargec Q9 40 60
Gate-Source ChargeC Qgs Vros = 30 V, VGS = 10 V, ID = 40 A 9 n0
Gate-Drain ChargeC di 10
Turn-On Delay Timec tam") 10 20
Rise Times tr VDD = 30 V, RL = 0.8 Q 9 20 ns
Turn-Off Delay Timec td(oti) ID 2 40 A, VGEN = 10 V, Rs = 2.5 Q 28 50
Fall Timec 1f 7 15
Source-Drain Diode Ratings and Characteristics (Tc = 25°C)b
Continuous Current Is 40
Pulsed Current ISM 100 A
Forward Voltagea VsD IF = 40 A, Vss = 0 V 1.0 1.5 V
Reverse Recovery Time trr 48 100 ns
Peak Reverse Recovery Current IRWREC) IF = 40 A, di/dt = 100 A/ys 6 A
Reverse Recovery Charge Qrr 0.15 “C
Notes:
a. Pulse test; pulse width 3 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
C. Independent of operating temperature,
www.vishay.com . FaxBack 408-970-5600
Document Number: 70288
S-57253-Rev. C, 24-Feb-98
VISHAY
SUP/SUB40N06-25L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
l l 6V
VGs=10,9,8,7V ///._ 5V
E 60 f
20 //,/ 4V
(i, 40 l
o 2 4 6 8 IO
Vos - Drain-to-Source Voltage (V)
Transconductance
Tc = -551
g f5 — Transconductance (S)
0 IO 20 3O 40 50 60
ID - Drain Current (A)
Capacitance
C — Capacitance (pF)
0 15 30 45 60
VDS - Drain-to-Source Voltage (V)
In — Drain Current
rDS(on) — On»Resistance( Q)
VGs — Gate-to»Source Voltage (V)
Transfer Characteristics
TC = 125°C
25°C /
l ""ssd -55''C
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V o,,.,,,,,,.,--'''"
VGS = 10 V
0 10 20 30 40 50 60
b - Drain Current (A)
Gate Charge
VDS = 30 V
8 - ID = 40 A
O 10 20 30 40 50
Q9 - Total Gate Charge (nC)
Document Number: 70288
S-57253-Reu C, 24-Feb-98
www.vishay.com . FaxBack 408-970-5600
SUP/SUB40N06-25L
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.5 I I I 100
VGS = 10 V
b = 20 A
A 2.0 r/
8 w,,,,''" E
C A q)
(u TY 1.5 A t
E; 3 "''" 3
g g / 0 10
a; g b'
8 il. 1.0 (’8)
lg w,,,,-"'''''' I
f? 0.5
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 os 1.2 1.5
T J - Junction TemperatureCC) VSD - Source-to-Drain Voltage (V)
THERMAL RATINGS
Drain Current vs. Case Temperature Sate Operating Area
50 200
A A Limited
tf; "ss C-:: by r 100 us
5 30 , E» IO
<3 8 1 ms
E 20 E
cl 'il 10 ms
- 10 - 00 ms
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Case Temperature (°C) Vros - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
(e E .
8 ngle Pulse
10-5 104 10-3 10-2 IO-I 1 3
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70288
b4 S-57253-Rev. C, 24-Feb-98
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