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STY80NM60N
N-channel 600 V, 0.030 Ohm, 74 A, MDmesh(TM) II Power MOSFET Max247
July 2011 Doc ID 14210 Rev 6 1/12
STY80NM60NN-channel 600 V , 0.030 Ω , 74 A, MDmesh™ II Power MOSFET
Max247
Features The worldwide best RDS(on) in Max247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications Switching applications
DescriptionThis device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STY80NM60N2/12 Doc ID 14210 Rev 6
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STY80NM60N Electrical ratings
Doc ID 14210 Rev 6 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area ISD ≤ 74 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STY80NM60N
4/12 Doc ID 14210 Rev 6
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5. On/off states Characteristic value at turn off on inductive load.
Table 6. Dynamic Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
STY80NM60N Electrical characteristics
Doc ID 14210 Rev 6 5/12
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area . Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STY80NM60N
6/12 Doc ID 14210 Rev 6
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
