STY60NM60 ,N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STY80NM60N ,N-channel 600 V, 0.030 Ohm, 74 A, MDmesh(TM) II Power MOSFET Max247Electrical characteristics(T =25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Par ..
STZ5.6N , Zener diode
STZ6.8T , Zener diode
STZC6.8N , ESD Protection diode
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
T830400W ,SNUBBERLESS TRIACFEATURESA AI =8A 2 1TRMSV =V = 400V to 700VDRM RRMGEXCELLENT SWITCHING PERFORMANCESINSULATING VOLTA ..
T830-400W ,SNUBBERLESS TRIACELECTRICAL CHARACTERISTICSSymbol Test Conditions Quadrant T820 T830 UnitI V =12V (DC) R =33Ω Tj= 25 ..
T830-700W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
T830800W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
T830-800W ,SNUBBERLESS TRIACFEATURESA An I =8A 2 1TRMSn V =V = 600V to 800VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATI ..
T835-600 ,HIGH PERFORMANCE TRIACapplicationsusing surface mount tecnology.2D PAKThese devices are perfectly suited where highcommut ..
STY60NM60
N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFET
1/6
TARGET DATASeptember 2001
STY60NM60N-CHANNEL 600V - 0.050Ω - 60A Max247
Zener-Protected MDmesh™Power MOSFET TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STY60NM60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
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STY60NM60
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STY60NM60
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
STY60NM60
STY60NM60
