STY60NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STY60NM60 ,N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
STY80NM60N ,N-channel 600 V, 0.030 Ohm, 74 A, MDmesh(TM) II Power MOSFET Max247Electrical characteristics(T =25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Par ..
STZ5.6N , Zener diode
STZ6.8T , Zener diode
STZC6.8N , ESD Protection diode
T830400W ,SNUBBERLESS TRIACFEATURESA AI =8A 2 1TRMSV =V = 400V to 700VDRM RRMGEXCELLENT SWITCHING PERFORMANCESINSULATING VOLTA ..
T830-400W ,SNUBBERLESS TRIACELECTRICAL CHARACTERISTICSSymbol Test Conditions Quadrant T820 T830 UnitI V =12V (DC) R =33Ω Tj= 25 ..
T830-700W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
T830800W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
T830-800W ,SNUBBERLESS TRIACFEATURESA An I =8A 2 1TRMSn V =V = 600V to 800VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATI ..
T835-600 ,HIGH PERFORMANCE TRIACapplicationsusing surface mount tecnology.2D PAKThese devices are perfectly suited where highcommut ..
STY60NM50
N-CHANNEL 500V
1/8August 2002
STY60NM50N-CHANNEL 500V - 0.045Ω - 60A Max247
Zener-Protected MDmesh™Power MOSFET TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤60A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
STY60NM50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
3/8
STY60NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
STY60NM50
Transconductance
Output Characteristics
Static Drain-source On Resistance
Transfer Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
5/8
STY60NM50
Normalized Gate Threshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STY60NM50
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
