STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STY34NB50 ,N- CHANNEL 500 VSTY34NB50®N - CHANNEL 500V - 0.11Ω - 34 A - Max247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTY34NB50 ..
STY34NB50F ,N-CHANNEL 500VSTY34NB50F®N - CHANNEL 500V - 0.11Ω - 34 A - Max247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTY34NB50 ..
STY60NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STY60NM60 ,N-CHANNEL 600V 0.50 OHM 60A MAX247 ZENER-PROTECTED MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 600 VDS GSV Drain ..
T830400W ,SNUBBERLESS TRIACFEATURESA AI =8A 2 1TRMSV =V = 400V to 700VDRM RRMGEXCELLENT SWITCHING PERFORMANCESINSULATING VOLTA ..
T830-400W ,SNUBBERLESS TRIACELECTRICAL CHARACTERISTICSSymbol Test Conditions Quadrant T820 T830 UnitI V =12V (DC) R =33Ω Tj= 25 ..
T830-700W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
T830800W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
T830-800W ,SNUBBERLESS TRIACFEATURESA An I =8A 2 1TRMSn V =V = 600V to 800VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATI ..
T835-600 ,HIGH PERFORMANCE TRIACapplicationsusing surface mount tecnology.2D PAKThese devices are perfectly suited where highcommut ..
STY30NA50
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STY30NA50N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPICAL RDS(on) = 0.15 Ω EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION The Max247 TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as TO-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
March 1996
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
1/4
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STY30NA502/4
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STY30NA503/4
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STY30NA504/4
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