STY112N65M5 ,N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STY30NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTY30NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) ..
STY30NK90Z ,N-CHANNEL 900VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 900 VDS GSV Drain ..
STY34NB50 ,N- CHANNEL 500 VSTY34NB50®N - CHANNEL 500V - 0.11Ω - 34 A - Max247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTY34NB50 ..
STY34NB50F ,N-CHANNEL 500VSTY34NB50F®N - CHANNEL 500V - 0.11Ω - 34 A - Max247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTY34NB50 ..
STY60NM50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
T830400W ,SNUBBERLESS TRIACFEATURESA AI =8A 2 1TRMSV =V = 400V to 700VDRM RRMGEXCELLENT SWITCHING PERFORMANCESINSULATING VOLTA ..
T830-400W ,SNUBBERLESS TRIACELECTRICAL CHARACTERISTICSSymbol Test Conditions Quadrant T820 T830 UnitI V =12V (DC) R =33Ω Tj= 25 ..
T830-700W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
T830800W ,SNUBBERLESS TRIACT820-xxxW®T830-xxxWSNUBBERLESS TRIAC
T830-800W ,SNUBBERLESS TRIACFEATURESA An I =8A 2 1TRMSn V =V = 600V to 800VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATI ..
T835-600 ,HIGH PERFORMANCE TRIACapplicationsusing surface mount tecnology.2D PAKThese devices are perfectly suited where highcommut ..
STY112N65M5
N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247
May 2012 Doc ID 15321 Rev 3 1/
STY112N65M5N-channel 650 V , 0.019 Ω , 96 A, MDmesh™ V Power MOSFET
in Max247 package
Datasheet — production data
Features Higher VDSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested
Applications Switching applications
DescriptionThis device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Contents STY112N65M5 Doc ID 15321 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STY112N65M5 Electrical ratings
Doc ID 15321 Rev 3 3/
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area. ISD ≤ 96 A, di/dt = 400 A/µs, VDD = 400 V, peak VDS < V(BR)DSS.
Table 3. Thermal data
Electrical characteristics STY112N65M5 Doc ID 15321 Rev 3
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.
STY112N65M5 Electrical characteristics
Doc ID 15321 Rev 3 5/
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
